• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1097-1100
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• 2008

We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.847-851
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• 2011

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• 상하수도학회지
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• 제22권3호
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• pp.379-387
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• 2008

The pH & alkalinity adjustment method by lime and carbon dioxide($CO_2$) for corrosion control in water distribution system was investigated to evaluate the corrosion characteristics of metal pipes, such as galvanized iron, copper, stainless steel, and carbon steel. When the pH in sand filtered and ozone+GAC treated water was increased with lime and $CO_2$ from 7.5 to 8.0, the concentration of residual chlorine decreased at higher pH and longer reaction time; the concentration of trihalomethane increased. The corrosion rate of coupons with corrosion control using lime and carbon dioxide was showed much smaller than those without corrosion control using pilot-scale simulated distribution system. The galvanized iron was corroded much faster than carbon steel, copper, and stainless steel. Especially, copper and stainless steel coupons were hardly corroded. The galvanized iron and carbon steel coupons with corrosion control were produced the corrosion products less than those without corrosion control by the results of environmental scanning electron microscope(ESEM) and energy dispersive x-ray spectroscopy(EDS) analyses. The galvanized iron coupon with pH and alkalinity adjustment by lime and carbon dioxide was detected about 30 percent of zinc, when the carbon steel was detected about 30 percent of calcium by calcium carbonate products formation. For the results of X-ray diffraction(XRD) analyses, the goethite(${\alpha}$-FeOOH) was identified as primary corrosion product of galvanized iron without corrosion control, while the Zinc oxide(ZnO) was found on corrosion products of galvanized iron coupon with corrosion control as the results of EDS analyses. However, the carbon steel corrosion products regardless of corrosion control were composed predominantly of maghemite(${\gamma}-Fe_2O_3$) and hematite(${\alpha}-Fe_2O_3$).

• 대한환경공학회지
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• 제35권9호
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• pp.636-642
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• 2013

광촉매인 나노크기의 산화아연(ZnO)과 흡착기능의 지지체인 Laponite, 결합제인 poly vinyl alcohol (PVA)를 혼합하여 붕산(boric acid)과 가교반응(crosslinking)을 통해 흡착과 광분해가 동시에 발생하며 회수가 불필요한 nano-ZnO/Laponite/PVA (ZLP) 광촉매 흡착볼을 개발하였다. ZLP 광촉매 흡착볼 제작을 위한 최적의 배합비는 Nano-ZnO:Laponite:PVA:deionized water의 구성비가 3:1:1:16 (by weight)으로 도출되었으며, PVA가 붕산과의 가교결합을 통해서 다층의 망(mesh network)과 막(film)을 형성하여 Laponite의 팽윤과 ZnO의 탈리 현상을 억제하는 것으로 사료된다. 수중안정성을 개선하고 비표면적을 높이기 위한 최적의 건조방법은 microwave를 활용하는 방법이며, SEM과 TEM의 분석을 통해 다양한 크기(55~500 ${\mu}m$)의 공극(pore)이 분포하며 ZnO의 균질한 분포를 확인할 수가 있었다. 메틸렌블루 광분해 특성은 반응 초기(40분)에는 Laponite와 메틸렌블루의 이온결합에 따른 흡착제거가 주요 제거 기작이며, 메틸렌블루의 흡착이 포화상태에 도달 후 광분해를 통한 제거가 발생함을 확인하여 흡착과 광분해가 동시에 발생하여 수중에 용해된 메틸렌 블루를 효과적으로 제거할 수 있음을 확인하였다. 본 연구를 통해 짧은 시간에 흡착과 광분해가 동시에 진행되어 난분해성 오염물질을 효과적으로 제거하는 광촉매 흡착볼의 제작이 가능하며, 나노물질의 탈리로 인해 발생하는 환경 및 수용체에 미치는 위해성도 최소화 할 수 있을 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.103-104
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• 2008

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89\times10^{-4}$ ${\Omega}cm$ and transmittance over 87%. without substrate temperature.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.373-376
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• 2009

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.