• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.47-53
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• 2002

In this study, two different (NiCuZn)-ferrite which were fabricated by using ultra-fine powders synthesized by the wet processing and conventionally commercialized powder, were investigated and compared each other in terms of the low temperature sintering and electromagnetic properties. Composition of x and w in $(Ni_{0.4-x}Cu_xZn_{0.6})_{1+w}(Fe_2O_4)_{1-w}$ were controlled as 0.2 and 0.03, respectively. The sintering temperature were $900^{\circ}C$ for ultra-fine powders by way of initial heat treatment and $1150^{\circ}C$ for commercialized powders. The (NiCuZn)-ferrite by ultra-fine powders showed love. sintering temperature than that of commercialized powders by over $200^{\circ}C$, and excellent electromagnetic properties such as the quality factor which is a important factor in the multi-layered chip inductor. In addition, characteristics of B-H hysteresis, crystallinity, microstructure and powder morphology were analyzed by a vibrating sample method(VSM), x-ray diffractometer(XRD), transmission electron microscope (TEM) and scanning electron microscope(SEM).

• Journal of Environmental Health Sciences
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• v.16 no.2
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• pp.83-87
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• 1990

This study was carried out to investigate the pollution of heavy metals in soil of seven stations from the upper spot (Yeungchun Dam) of Kumho River to the downstream(Gangchang Bridge). The results obtained were as follows: 1. The content of heavy metals in soil of Kumho River basin was highest at Gangchang Bridge [expresed in $\mu$g/g : Mn(246.0), Cd(1.90), Fe(551.2), Cu(108.2), Zn(86.4), Cr(80.2), respectively]. Whereas, the content of heavy metals expect for Mn, Cu was lowest at Yeungchun Dam [Cd(0.40), Fe(548.0), Zn(30.7), Cr(6.2), respectively] Also, the content of Cr, Zn was increased when the sampling areas are changed from upstream to downstream except for Hayang Bridge, and Hayang Bridge was the diverging point of the heavy metals content. 2. There were relatively correlated between Mn : FE, Cu, Zn, Cr, Fe : Cu, Zn, Cr(0.40 < $\left$\mid${r}\right$\mid$$ < 0.70), and were high correlated between Cd : Mn, Fe, Cu, Zn, Cu : Zn, Zn : Cr(0.70 < $\left$\mid${r}\right$\mid$$ < 0.90). Particularly, there was higest correlated between Cd : Cr, Cu : Cr(0.90< $\left$\mid${r}\right$\mid$$ < 1.0)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.180-184
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• 1999

The single crystals of $Mg_{0.15}Zn_{0.85}Te$ and $Mg_{0.15}Zn_{0.85}Te:Co^{2+}$(0.001%) were grown by vertical Bridgman method. Optical absorption properties of this compound were studied. As a result of the optical absorption spectra of $Mg_{0.15}Zn_{0.85}Te$, absorption peaks were related to exciton and the exciton level redshifts with increasing temperature, and temperature coefficient given to the value of $-5.8{\times}10^{-4}\;eV/K$ for the temperature range above 100 K. in the $Mg_{0.15}Zn_{0.85}Te:Co^{2+}$(0.001%) single crystal, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F) {\to}^4T_1(^4F),\; B-band:\; ^4A_2(^4F){\to}^4T_1(^4P)$, and the charge transfer transition near the absorption edge was observed in the wavelength range of 500 to 800 nm. According to the crystal field theory and Lucovsky formula, the crystal field parameter, Racah parameter and charge transfer energy were determined.

• Journal of Magnetics
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• v.10 no.3
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• pp.84-88
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• 2005

Nanoparticles $Ni_{0.7}Zn_{0.3}Fe_2O_4$ is fabricated by a sol-gel method. The magnetic and structural properties of powders were investigated with XRD, SEM, $M\ddot{o}ssbauer$ spectroscopy, and VSM. $Ni_{0.7}Zn_{0.3}Fe_2O_4$ powders annealed at $300^{\circ}C$ have a spinel structure and behaved superparamagnetically. The estimated size of $Ni_{0.7}Zn_{0.3}Fe_2O_4$ nanoparticle is about 11 nm. $Ni_{0.7}Zn_{0.3}Fe_2O_4$ annealed at 400 and $500^{\circ}C$ has a typical spinel structure and is ferrimagnetic in nature. The isomer shifts indicate that the iron ions were ferric at the tetrahedral (A) and the octahedral (B). Blocking temperature $(T_B)\;of\;Ni_{0.7}Zn_{0.3}Fe_2O_4$ nanoparticle is about 260 K. The magnetic anisotropy constant of $Ni_{0.7}Zn_{0.3}Fe_2O_4$ annealed $300^{\circ}C$ were calculated to be $1.7X10^6\;ergs/cm^3$. Also, temperature of the sample increased up to $43^{\circ}C$ within 7 minutes under AC magnetic field of 7 MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.313-319
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• 2018

This study introduces a new investigation report on the microstructural and electrical property changes of $ZnO-Zn_2BiVO_6-Mn_3O_4$ (ZZMn), where 0.33 mol% of $Mn_3O_4$ and 0.5 mol% of $Zn_2BiVO_6$ were added to ZnO (99.17 mol%) as liquid phase sintering aids. $Zn_2BiVO_6$ contributes to the decrease of sintering temperatures by up to $800^{\circ}C$, and segregates its particles at the grain boundary, while $Mn_3O_4$ enhances ${\alpha}$, the nonlinear coefficient, of varistor properties up to ${\alpha}=62$. In comparison, when the sintering temperature is increased from $800^{\circ}C$ to $1,000^{\circ}C$, the resistivity of ZnO grains decreases from $0.34{\Omega}cm$ to $0.16{\Omega}cm$, and the varistor property degrades. Oxygen vacancy ($V_o^{\bullet}$) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be $ZnO/Zn_2BiVO_6$-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under $900^{\circ}C$. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.238-238
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• 2009

In this work, we investigated the effect of the Zn complex concentration and growth temperature on the growth of ZnO nanorod by hydrothermal method. The ZnO nanorods were performed at condition of the various Zn complex concentration and growth temperature, 0.02 ~ 0.08 M and 60 ~ 80 $^{\circ}C$, respectably. We found from the SEM results that the diameter and length of ZnO nanorods were with increasing the growth temperature and Zn complex concentration. However, the growth condition in the two parameters wasmore than sensitive compared to Zn complex concentration on increasing the growth rate. From photoluminescence(PL) analysis, the strong band-edge emission for ZnO nanorod grown at 80 $^{\circ}C$ with 0.08 M indicated the fine crystallinity. Therefore, the diameter and length of ZnO nanorods have been able to control through the control of front growth parameters. Also, these ZnO nanorods grown low temperature will be available as building block for transparence flexible device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.467-471
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• 2000

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.211-214
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• 2013

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.455-460
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• 2022

Brush-like ZnO hierarchical nanostructures decorated with MgxZn1-xO (x = 0.1, 0.2, 0.3, 0.4, and 0.5) were fabricated and examined for application to a gas sensor. They were synthesized using vapor phase growth (VPG) on indium tin oxide (ITO) substrates. To generate electronic accumulation at ZnO surface, MgZnO nanoparticles were prepared by sol-gel method, and the ratio of Mg and Zn was adjusted to optimize the device for NO₂ gas detection. As the electrons in the accumulation layer generated by the heterojunction reacted faster and more frequently with the gas, the sensitivity and speed improved. When tested as sensing materials for gas sensors at 100 ppm NO₂ at 300℃, these MgZnO decorated ZnO nanostructures exhibited an improvement from 165 to 514 times compared to pristine ZnO. The response and recovery time of the MgZnO decorated ZnO samples were shorter than those of the pristine ZnO. Various analyzing techniques, including field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray powder diffraction (XRD) were employed to confirm the growth morphology, atomic composition, and crystalline information of the samples, respectively.