Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Annealing Effects on $Zn_{0.9}Cd_{0.1}$/Se/ZnSe Strained Single Quantum Well

Zn_{0.9}Cd_{0.1}/ZnSe 변형된 단일 양자우물구조의 열처리 효과

  • 김동렬 (영남대학교 물리학과) ;
  • 배인호 (영남대학교 물리학과) ;
  • 손정식 (경운대학교 건축환경생명학부)
  • Published : 2000.06.01
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Abstract

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

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