• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• 한국결정성장학회지
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• 제8권4호
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• pp.592-598
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• 1998

ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

• 한국진공학회지
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• 제7권3호
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• pp.201-207
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• 1998

본 연구는 rf reactive magnetron sputtering 방법으로 증착한 ZnO 박막을 압전진동 자로 제작하였을 때 발생하는 금속전극과의 계면특성에 대해 조사하였다. 이때 ZnO 박막은 금속 아연 target을 산소분위기에서 sputtering하여 얻었다. 미리 얻은 최적성장조건으로 Cr/ZnO/Cr의 구조을 갖는 압전 진동자를 제작한 후, 금속전극과 ZnO 박막과의 계면특성을 분석하였다. 제작된 압전진동자는 I-V 측정, AES depth profile, SEM, C-V 측정등을 이용 하여 분석하였고, 이러한 분석 결과 금속전극과 ZnO 박막 사이에 $SiO_2$ 확산방지막을 쌓은 Cr/ $SiO_2$/ZnO/Cr의 구조로 ZnO 압전진동자를 제작했을 때 좋은 특성을 보임을 알 수 있었 다. 그리고, 이러한 사실은 제작된 진동자를 구동시키고 이에 대한 인가진동수에 따른 진동 변위를 측정해보므로써 확인할 수 있었다.

• 한국환경농학회지
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• 제29권2호
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• pp.115-119
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• 2010

Zinc (Zn) is an essential element required for growth and development of plants. However, Zn can be toxic to plants when it presents excessive amount. Phytoextraction is an economic and environment-friendly technique using plants to clean-up metal-contaminated soils. However, the technique cannot be applied in highly metal-contaminated areas because plants will not normally grow in such conditions. Therefore, this research focuses on identifying chelating agents which are biodegradable and applicable to highly metalcontaminated areas. Zn as a target metal and cysteine (Cys), histidine (His), malate, citrate oxalate, succinate, and ethylenediamine (EDA) as biodegradable chelating agents were selected. Plants were grown on agar media containing various chelating agents with Zn to analyze the effect on plant growth. Malate and His slightly increased the inhibitory effect of Zn on root growth of plants, whereas Cys, citrate, oxalate, and succinate did not show significant effects. However, EDA strongly diminished the inhibitory effect of Zn on root growth. The effect of EDA is correlated with decreased Zn uptake into the plants. In conclusion, as biodegradable chelating agents, EDA is a good candidate for growth of plants in highly Zn-contaminated areas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• 한국환경농학회지
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• 제25권3호
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• pp.236-246
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• 2006

In this study, we give insight into questionable results that can be encountered in the conventional sequential extraction of heavy metals (Cd, Cu, and Zn) from soils. Objectives of this study were to determine the extraction variability of exchangeable (EXC)-metals as using six different EXC-extractants commonly accepted, and to investigate selectivity problems with carbonates bound (CAB)-metal fraction, a buffered acetate (1.0 M NaOAc; pH 5.0) extractable-metal fraction, leading to erratic results in especially non-calcareous soils. The contents of EXC-metals were markedly varied with the different extractability of various EXC-metal extractants used. The contents of EXC-Cd fraction were ranged from 2.0 to 74.3% of total Cd content in all of the metal spiked soils studied. The contents of EXC-Zn fraction extracted with the different EXC-extractants were varied with soil types, which were from 0.4 to 3.9% of total Zn in the calcareous soils, from 7.6 to 17.9% in the acidic soil, and from 13.6 to 56.8% in the peat soil. However, the contents of EXC-Cu fraction were relatively similar among the applications of different EXC-meal extractants, 0.2 to 2.1 % of total Cu, in all soils tested. Also, these varied amounts of EXC-metal fractions, especially Cd and Zn, seriously impacted the contents of subsequent metal fractions in the procedure. Furthermore, the CAB-Cd, -Cu, and -Zn fractions extracted by the buffered acetate solution were in critical problem. That is, the buffered acetate solution dissolved not only CAB-metals but also metals that bound or occupied to subsequent fractions, especially OXD-metal fraction, in both calcareous and non-calcareous soils. The erratic results of CAB-fraction also seriously impacted the amounts of subsequent metal fractions. Therefore, the conventional sequential extraction should be reconsidered theoretically and experimentally to quantify the target metal fractions or might be progressively discarded.

• 한국세라믹학회지
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• 제31권1호
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• pp.55-61
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• 1994

Mn-Zn ferrite powder was obtained by wet method that was to be coprecipitated the metal ions of Fe2+, Mn2+ and Zn2+ with alkali solution. The target composition of the ferrite powder was 52 mol% Fe2O3, 24 mol% MnO, and 24 mol% ZnO, that was based on the region of high permeability. And the other ferrite powder was prepared by the dry method that was to be mixed the metal oxides as the above chemical composition. The wet method was compared with dry method for the powder properties and the electromagnetic characteristics of sintered cores. The synthesized powder by wet method was smaller particle size, narrower particle distribution, and higher purity than that of dry method. The initial permeability of sintered sample prepared by the wet method was 14000~28000, on the other side, 9000~15500 in case of the dry method.

• 한국건축시공학회지
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• 제21권6호
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• pp.519-527
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• 2021

본 연구에서는 기존의 전자기파 차폐 성능이 없는 콘크리트를 대상으로 아크 금속용사 공법을 적용하여 전자기파 차폐성능을 확보하고자 한다. 이를 위해 금속 코팅의 두께에 전기적 특성을 평가하기 위해서 8 종류의(Cu, CuAl, CuNi, CuZn, Al, Zn, ZnAl, AlMg) 금속들을 두께 100, 200 및 500㎛의 금속 코팅으로 제작하여 4pin-probe로 표면에서의 전기전도도를 측정하였고, KS C 0304에 의거하여 전자기파 차폐 성능 시험을 실시하였다. 금속 코팅 시험 결과를 토대로 전자기파 차폐를 위한 최적의 금속 코팅 두께 200㎛를 제안하였으며, 이를 300×300×100mm 콘크리트 시험체에 용사하여 전자기파 차폐 성능을 분석한 결과 목표 성능 1GHz에서 80dB의 전자기파 차폐 성능이 확보됨을 확인하였다. 하지만 부착 강도의 경우 최대 1.11MPa로 목표 성능 대비 74% 이하로 확인되어 추후 콘크리트 표면에 미세한 요철을 형성하여 부착 성능을 향상시키는 연구가 필요할 것으로 판단된다.

• 한국결정성장학회지
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• 제14권6호
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• pp.277-280
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• 2004

p형 ZnO 에피 박막을 사파이어 기판의 (0001)면 상에 RF-DC magnet co-sputtering 법으로 성장시켰다. 약 120nm두께의 단결정상 박막을 성공적으로 얻어내었다. p형 ZnO를 만들기 위해서 Al 금속 타켓을 이용하여 DC 스퍼터링으로 $400^{\circ}C$와 $600^{\circ}C$에서 ZnO를 rf magnetron sputtering으로 증착하고, 동시에 Al의 doping을 행하였으며, 성장된 박막의 결정성과 광특성에 대하여 고찰하였다.