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Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target  

Yu, Meng (Department of Electrical and Computer Engineering, Ajou University)
Jo, Jungyol (Department of Electrical and Computer Engineering, Ajou University)
Publication Information
Journal of the Semiconductor & Display Technology / v.13, no.3, 2014 , pp. 35-38 More about this Journal
Abstract
Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.
Keywords
Zinc oxide; Zn metal target; Thin-film transistor; Sputtering; Carbon dioxide;
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Times Cited By KSCI : 1  (Citation Analysis)
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