• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1342_1342
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• 2009

Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.61.1-61.1
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• 2011

본 연구에서는 Zinc Tin Oxide (ZTO)/Ag/ZTO 다층 투명 전극을 제작하고 이를 비정질 ZTO (a-ZTO) 채널을 기반으로 한 TFT에 적용하여 투명 TFT의 전기적 특성을 확인하였다. 15${\times}$15 mm 크기의 ITO (gate)/Glass 기판상에 ALD법으로 투명 $Al_2O_3$절연층을 형성하고, RF sputtering법으로 50nm 두께의 a-ZTO 채널층을 형성하였다. 열처리를 위하여 Hot plate를 이용해 대기 중에서 $300^{\circ}C$의 온도로 20분간 열처리하여 채널 특성을 최적화 하였다. 이후 투명 Source/Drain으로 ZTO/Ag/ZTO 다층 투명 전극을 DC/RF sputtering법으로 패터닝하여 투명 TFT를 완성하였고, 평가를 위해 금속 (Mo)을 Source/Drain으로 사용한 TFT를 제작하여 그 성능을 비교하였다. ZTO/Ag/ZTO 다층 투명 전극은 Ag의 삽입으로 인하여 3.96ohm/square의 매우 낮은 면저항과 $3.24{\times}10-5ohm-cm$의 비저항을 나타내었으며, Antireflection 효과에 의해 가시광선 영역 (400~600 nm)에서 86.29%의 투과율을 나타내었다. ZTO/Ag/ZTO 다층 투명 전극 기반 투명 TFT는 $6.80cm^2/V-s$의 이동도와 $8.2{\times}10^6$의 $I_{ON}/I_{OFF}$비를 나타내어 금속 Source/Drain 전극에 준하는 특성을 나타내었다. 뿐만 아니라 전체 소자의 투과도 또한 ~73.26% 수준을 나타내어 투명 TFT용 Source/Drain 전극으로서 ZTO/Ag/ZTO 다층 투명 전극의 가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.