• Title/Summary/Keyword: Zinc oxide varistor

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A Study on the Stability of Praseodymium-Based Zinc Oxide Varistor with Tittria Additives. (이트리아가 첨가된 프라세오디뮴계 산화아연 바리스터의 안정성에 관한 연구)

  • 남춘우;박춘현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.842-848
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    • 1998
  • The stability of paraseodymium-based zinc oxide varistor consisting of Zn-Pr-Co-Cr-Y oxide was investigated according to yttria additives under different stress conditons, such as 0.8V\ulcorner\ulcorner/373K/12h and 0.85V\ulcorner\ulcorner/393K/12h. Wholly, all varistor after the stress showed nearly symmetric and stable I-V characteristics. Particularly, in the case of 2.0mol% and 4.0mol% yttria-added varistor showing a good I-V characteristics, the varation rate of varistor voltage were less 1% and that of nonlinear coefficient were about degree of 5%, and what is remarkable, leakage current with increasing stress time during the applied stress was almost constant. It the light of these facts, it is estimated that varistor constituents having 2.0mol% and 4.0mol% yittria, respectively, will be utilized to various application fields.

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Evaluation of 띠ectrical Uniformity of Zinc Oxide Varistors for Lightning Surge Arresters (초고압 피뢰기용 산화아연소자의 전기적 균일성 평가)

  • Cho, Han-Goo;Yoon, Han-Soo;Han, Se-Won
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.100-102
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    • 2005
  • This paper presents evaluation of the electrical uniformity of zinc oxide varistors for lightning arresters. Two types of varistors were prepared which are a domestic varistor destroyed in the long duration current impulse withstand test and a new imported varistor. The domestic varistor exhibited good electrical uniformity except destroyed parts, but the imported varistor showed the worse results.

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Sintering Effect on Clamping Characteristics and Pulse Aging Behavior of ESD-Sensitive V2O5/Mn3O4/Nb2O5 Codoped Zinc Oxide Varistors

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.308-311
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    • 2015
  • V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E1 mA/cm2 = 27 (initial 39) after application of a pulse current of 100 A.

Degradation Characteristics of Pr/Co/Cr/Er Co-doped Zinc Oxide Varistors by Impulse Current Stress

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.348-352
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    • 2014
  • In light of the sure protection function, the most important factors of a varistor are the clamping voltage ratio and degradation characteristics. The degradation characteristics of Pr/Co/Cr/Er co-doped zinc oxide varistors were investigated by impulse currents (0.4~2.1 kA) stress for the specified content of $Er_2O_3$ (0.5 and 2.0 mol%). The varistor doped with 2.0 mol% $Er_2O_3$ exhibited the best clamp characteristics, with the clamp voltage ratio (K) in the range of K = 1.63~1.88 at the impulse currents of 5-50 A. However, the varistor doped with 0.5 mol% exhibited excellent electrical stability, with variation rates for the breakdown field, for the nonlinear coefficient, and for the leakage current density of -6.9%, -12.6%, and -14.3%, respectively, after application of an impulse current of 2.1 kA. In contrast, the varistor doped with 2.0 mol% was destroyed after application of an impulse current of 1.2 kA.

Varistor Properties and Aging Behavior of V/Mn/Co/ La/Dy Co-doped Zinc Oxide Ceramics Modified with Various Additives

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.284-289
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    • 2014
  • The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

Microstructure and Electrical Properties of $SiO_2$-Doped Zinc Oxide Varistors ($SiO_2$가 첨가된 산화아연 바리스터의 미세구조 및 전기적 특성)

  • 남춘우;정순철
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.659-667
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    • 1997
  • The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

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Effects of Low-Temperature Sintering on Varistor Properties and Stability of VMCDNB-Doped Zinc Oxide Ceramics

  • Nahm, Choon-W.
    • Journal of the Korean Ceramic Society
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    • v.56 no.1
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    • pp.84-90
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    • 2019
  • The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

The Effect of Cobalt Oxide Addition on Electrical and Dielectic Stability of Zinc Oxide Varistors (코발트 산화물 첨가가 산화아연 바리스터의 전기적, 유전적 안정성에 미치는 영향)

  • Nahm Choon-Woo;Yoo Dae-Hoon
    • Korean Journal of Materials Research
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    • v.15 no.11
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    • pp.722-729
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    • 2005
  • The electrical and dielectric stability of zinc oxide-based varistors were investigated with the cobalt oxide contents in the range of $0.5\~5.0 mo\l%$. As cobalt oxide contents increased, the ceramic density increased in the range of $5.25\~5.55g/cm^3$ and the varistor voltage decreased in the range of $235.3\~86.0V$. The varistor with on addition of cobalt oxide $1.0 mol\%$ exhibited good nonlinearity. in which the nonlinear exponent is 66.6 and the leakage current is $1.2{\mu}A$. Furthermore, the varistors exhibited the highest electrical and dielectric stability, with $\%{\Delta}V_{1mA}=-1.9\%,\;\%{\Delta}{\alpha}=-10.5\%,\;\%{\Delta}I_L=+275.0\%,\;and\;\%{\Delta}tna{\delta}=+55.6\%$, under DC accelerated aging $0.95V_{1mA}/150^{\circ}C/24h$.

Effect of Cobalt Oxide Addition on Electrical Properties of Praseodymium-based Zinc Oxide Varistors (프라세오디뮴계 산화아연 바리스터의 전기적 특성에 코발트 산화물 첨가의 영향)

  • Nahm, Choon-Woo;Park, Jong-Ah;Yoo, Dae-Hoon;Suh, Hyoung-Kwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.10
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    • pp.896-901
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    • 2005
  • The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

Microstructure Properties of Zinc Oxide Varistor with $Sb_2O_3$ Contents for Low Voltage Application ($Sb_2O_3$함량 변화에 따른 저전압용 ZnO Varistor의 미세구조 특성)

  • 박종주;서정선
    • Korean Journal of Crystallography
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    • v.8 no.2
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    • pp.149-153
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    • 1997
  • ZnO varistor based on ZnO-Bi2O3-Co3O4-MnCO3-Cr2-O3-Sb2O3 system with Sb2O3 contents were studied for grain size variation and microstructure properties. The composition of pure ZnO varistor was observed composition was inhibited owing to formation of Zn7Sb2O12 spinel phase and did not observed abnrmal grain growth. With Sb2O3 contents, the grain sizes of ZnO varistor were remarkably decreased and the microstructure had the distribution of dense and homogeneous grains.

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