• Fibers and Polymers
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• v.3 no.1
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• pp.1-7
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• 2002

Cellulose carbonate was prepared by the reaction of cellulose pulp and $CO_2$ with treatment reagents, such as aqueous $Zncl_2$ (20-40 wt%) solution, acetone or ethyl acetate, at -5-$0^{\circ}C$ and 30-40 bar ($CO_2$) for 2 hr. Among the treatment reagents, ethyl acetate was the most effective. Cellulose carbonate was dissolved in 10% sodium hydroxide solution containing zinc oxide up to 3 wt% at -5-$0^{\circ}C$. Intrinsic viscosities of raw cellulose and cellulose carbonate were measured with an Ubbelohde viscometer using 0.5 M cupriethylenediamine hydroxide (cuen) as a solvent at $20^{\circ}C$ according to ASTM D1795 method. The molecular weight of cellulose was rarely changed by carbonation. Solubility of cellulose carbonate was tested by optical microscopic observation, UV absorbance and viscosity measurement. Phase diagram of cellulose carbonate was obtained by combining the results of solubility evaluation. Maximum concentration of cellulose carbonate for soluble zone was increased with increasing zinc oxide content. Cellulose carbonate solution in good soluble zone was transparent and showed the lowest absorbance and the highest viscosity. The cellulose carbonate and its solution were stable in refrigerator (-$5^{\circ}C$ and atmospheric pressure).

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.283-286
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• 1999

Transparent conductive aluminum-doped ZnO(AZO) films Were prepared by a ultrasonic spray pyrolysis method at the substrate temperature below 23$0^{\circ}C$. A vertical type hot wall furnace was used as a reactor in the deposition system. Zinc acetate dissolved in methanol was selected as a precursor. The substrate temperature was varied from 18$0^{\circ}C$to 24$0^{\circ}C$. Aluminum (Al) was doped into ZnO films by incorporating anhydrous aluminum chloride (AlCl$_3$) in the zinc acetate solution. The proportion of the Al in the starting solution was varied from 0 wt % to 3.0 wt %. The crystallographic properties and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The resistivity of the films was measured by the Van der Pauw method, and the mobility and carrier concentration were obtained through the Hall effect measurements Transmittance was measured in the visible region. The effects of substrate temperature and aluminum content in the starling solution on the structural and electrical properties of the AZO films are discussed

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.645-648
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• 2017

A catalyst for promoting the commercialization of N-phenylamleimide (PMI), a compound used to strengthen the heat resistance of ABS resins and also completely imported, was developed. N-phenylmaleamic acid (PMA) was first quantitatively obtained through the reaction of maleic anhydride and aniline. A catalyst was then investigated for obtaining PMI. Zinc acetate/$Et_3N$, composite catalyst, showed better performance than a single acid catalyst. By using the developed composite catalyst, PMI could be synthesized with the yield and purity of 90% and 99.3%, respectively without any further purification processes.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.103-111
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• 2018

Transesterification of BHET (Bis (2-Hydroxyethyl) Terephthalate), monomer of PET (Poly Ethylene Terephthalate) to BHBT (Bis (4-Hydroxybutyl Terephthate), monomer of PBT (Poly Butylene Terephthalate), using 1,4-BD (1,4-butanediol) were investigated. Zinc acetate was used as a catalyst for the reaction. Amounts of BHET, EG, and THF (Tetrahydrofuran) in a batch reactor were measured for determining the reaction kinetics. Mathematical models of the batch reactor for the transesterification reaction were developed and used to characterize the reaction kinetics and the composition distribution of the reaction products. Model predictions for the transesterification were in good agreement with experimental results.

• Journal of the Korean Chemical Society
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• v.60 no.1
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• pp.34-38
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• 2016

In this paper, zinc oxide nanoparticles (ZnO NPs) were synthesized using the sonochemical method, where equimolar amounts of zinc acetate dehydrate and sodium hydroxide were separately dissolved in deionized water, and then mixed for 30 min under magnetic stirring. The resultant white gel was sonicated for 60, 120, 180, 240, and 360 min with magnetic stirring. The obtained precipitates were centrifuged, repeatedly washed with ethanol to remove ionic impurities, and dried at 50 ℃ for 24 h. The formation of pure NPs was confirmed by X-ray diffraction, and their crystallinity and crystal phases were analyzed as well. Structural investigation was carried out by field-emission scanning electron microscopy (FE-SEM). The photocatalysis behavior of the ZnO NPs was investigated in a dark room under UV irradiation, using Rhodamine B. Spherical, rod, and flower-like ZnO NPs could be obtained by adjusting the sonication time, as observed by FE-SEM. The flower-like ZnO NPs exhibited excellent photocatalytic activity.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.155-162
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• 1997

Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of $350^{\circ}C$. The resistivity was increased to above $3{\times}10^{6}{\Omega}{\cdot}cm$ with copper doping and vapor oxidation.