• Title/Summary/Keyword: Zero Current Sensor

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Unity Power Factor Control of Sensorless Switched Reluctance Motor

  • Jeyakumar, A. Ebenezer;Shanmuganandan, K.J.
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1147-1152
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    • 2004
  • Switched Reluctance Motors have an inexpensive, intrinsic simplicity and low cost that makes them well suited to home appliance and office applications. However the motor suffering with necessity of shaft position sensor, lead to non-linearity of operations. Further, the involvement of static converters deteriorates the operational power factor. Implementation of a sensorless algorithm, can remove the need of position sensors. Also, the drive includes a compact power factor control in the input stage by implementing Zero Current Switching Quasi-Resonant Boost Technology. This paper presented, aims at optimized low line current distortion, high power factor, low cost and a shaft position sensorless Switched Reluctance Motor drive.

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Development of a Portable Potentiostat with Wireless Communications for Measuring Dissolved Oxygen (용존산소 측정을 위한 무선통신 기반 휴대형 포텐쇼스탯 개발)

  • Lee, Hyun-Seok;Han, Ji-Hoon;Pak, Jungho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.12
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    • pp.1641-1647
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    • 2018
  • In this paper, we describe a portable potentiostat which is capable of cyclic voltammetry(CV) and amperometry for electrochemical dissolved oxygen sensor. In addition, this portable potentiostat can also transmit the measured data wirelessly to android devices such as smart phone, tablet, etc. through Bluetooth. The potentiostat system consists of three parts; a voltage generator circuit which is controlled by Arduino nano and 12-bit DAC(digital to analog converter) to generate necessary electric potential for operating the electrochemical sensor, an oxidation/reduction current measurement circuit, and a Bluetooth module to transmit data wirelessly to an android device. Once measurements are carried out with the android application, the measured data is transmitted to the android device via Bluetooth and displayed using the android app. in real time. In this paper, we report the measured reduction current with a fabricated dissolved oxygen sensor in both saturated-oxygen state and zero-oxygen states. The results of the developed portable potentiostat system are in good agreement with those of the commercial portable potentiostat (${\mu}stat200$, Dropsens inc.). The measured peak reduction currents using the developed potentiostat and the commercial ${\mu}stat200$ potentiostat were $-0.755{\mu}A$ and $-0.724{\mu}A$, respectively. The reduction currents measured at zero-oxygen state were $-0.005{\mu}A$ and $-0.004{\mu}A$. The discrepancy between those two systems seems very small, which implies successful development of a portable and wireless potentionstat.

Fabrication of Graphene Field-effect Transistors with Uniform Dirac Voltage Close to Zero (균일하고 0 V에 가까운 Dirac 전압을 갖는 그래핀 전계효과 트랜지스터 제작 공정)

  • Park, Honghwi;Choi, Muhan;Park, Hongsik
    • Journal of Sensor Science and Technology
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    • v.27 no.3
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    • pp.204-208
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    • 2018
  • Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

A Current Sensor-less Bridgeless CCM Single-Stage PFC Converter with Semi-Active Rectifier (Semi-Active Rectifier를 적용한 센서리스 단일단 브리지리스 PFC 컨버터)

  • Naradhipa, Adhistira M.;Kang, Suhan;Hai, Tran;Sagpazar, Nur Banu;Choi, Sewan
    • Proceedings of the KIPE Conference
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    • 2018.11a
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    • pp.59-61
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    • 2018
  • 본 논문에서는 입력전류를 센싱 받지 않아도 역률 보상을 하는 새로운 단일단 브리지리스 AC-DC컨버터를 제안한다. 제안하는 컨버터의 스위치는 전구간에서 ZVS(Zero Voltage Switching) 턴 온을 성취하며, 다이오드는 전구간에서 ZCS(Zero Current Switching) 턴 오프를 성취한다. 제안하는 컨버터의 넓은 범위의 출력전압 제어와 간단한 전력 제어를 위해 SDAB(Semi-Dual Active Bridge)기반의 모듈레이션 기법을 적용하였다. 1kW급 50kHz의 스위칭 주파수를 갖는 시작품을 통해 본 논문의 타당성을 검증하였다.

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A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement (스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서)

  • Jung, Hanyung;Lee, Junghoon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.114-121
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    • 2014
  • We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

Ubiquitous Sensors for Supervision of Power Facilities in Overhead Power Distribution Lines (가공배전선로의 전력설비 감시를 위한 유비쿼터스 센서)

  • Kil, Gyung-Suk;Park, Dae-Won;Kim, Il-Kwon;Choi, Su-Yeon;Park, Chan-Yong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.10
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    • pp.59-65
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    • 2007
  • Recently, ubiquitous sensor network(USN) techniques have been applied to electric power facility management. This paper dealt with the designed and fabricated ubiquitous sensors which monitor transformers and lightning arresters installed in overhead distribution systems. The sensors consist of a 8-[bit] microprocessor unit, a wireless communication nodule specified in IEEE 802.15.4, and associated electronics. A Rogowski coil was fabricated to measure load of transformer and surge current without saturation having good linearity up to 1000[A]. A zero-phase current transformer with a high relative permeability of $10^5$ at 180[Hz] was used to detect small leakage current of $50[{\mu}A]{\sim}1[mA]$ flowing lightning arrester, and the frequency bandwidth of the module is ranges from 12[Hz] to 1.24[kHz] at -3[dB].

Diminution of Current Measurement Error in Vector Controlled AC Motor Drives

  • Jung Han-Su;Kim Jang-Mok;Kim Cheul-U;Choi Cheol;Jung Tae-Uk
    • Journal of Power Electronics
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    • v.5 no.2
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    • pp.151-159
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    • 2005
  • The errors generated from current measurement paths are inevitable, and they can be divided into two categories: offset error and scaling error. The current data including these errors cause periodic speed ripples which are one and two times the stator electrical frequency respectively. Since these undesirable ripples bring about harmful influences to motor driving systems, a compensation algorithm must be introduced to the control algorithm of the motor drive. In this paper, a new compensation algorithm is proposed. The signal of the integrator output of the d-axis current regulator is chosen and processed to compensate for the current measurement errors. Usually the d-axis current command is zero or constant to acquire the maximum torque or unity power factor in the ac drive system, and the output of the d-axis current regulator is nearly zero or constant as well. If the stator currents include the offset and scaling errors, the respective motor speed produces a ripple related to one and two times the stator electrical frequency, and the signal of the integrator output of the d-axis current regulator also produces the ripple as the motor speed does. The compensation of the current measurement errors is easily implemented to smooth the signal of the integrator output of the d-axis current regulator by subtracting the DC offset value or rescaling the gain of the hall sensor. Therefore, the proposed algorithm has several features: the robustness in the variation of the mechanical parameters, the application of the steady and transient state, the ease of implementation, and less computation time. The MATLAB simulation and experimental results are shown in order to verify the validity of the proposed current compensating algorithm.

Review of Low-Dimensional Nanomaterials for Blue-Light Emission

  • Won Kook Choi
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.391-402
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    • 2023
  • Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.

A Study on the Fabrication of the Sensor Module for the Detection of Resistive Leakage Current (Igr) in Real Time and Its Reliability Evaluation (실시간 Igr 검출을 위한 센서 모듈의 제작 및 신뢰성 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.33 no.1
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    • pp.28-34
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    • 2018
  • The purpose of this study is to fabricate a sensor module to detect the resistive leakage current (Igr) in real time that occurs to low voltage electric lines and to verify its reliability. In the case of the developed sensor module, wires are inserted into the zero current transformer (ZCT) and current transformer (CT) in advance and then the branch line is connected to the circuit breaker. The measurement result of the resistance of the distribution panel equipped with the developed sensor module shows that the resistance is $0.151m{\Omega}$ between the R and R phases, $0.169m{\Omega}$ between the S and S phases, and $0.178m{\Omega}$ between the T and T phases, respectively. The insulation resistance measured at AC 500 V and 1,000 V is $0.08m{\Omega}$ between the R, S, T and N phases, respectively. Then, the insulation resistance measured at DC 500 V is $83.3G{\Omega}$ between the R, S, T and G terminal, respectively. In addition, the applied withstanding voltage is AC 220 V/380 V/440 V and it was found that characteristics between all phases are good. This study measured the standby power by installing the developed sensor module at the rear of the MCCB and switching the circuit breaker on sequentially. The standby power is 1.350 W when one circuit breaker is turned on, 1.690 W when 2 circuit breakers are turned on, and 4.371 W when 10 circuit breakers are turned on. This study also verified the reliability of the standby power of the distribution panel equipped with the developed sensor module using the Minitab Program (Minitab PGM). Since the analysis shows the statistical average of 1.34627 in the reliable range of normal distribution, standard deviation of 0.001874, AD of 0.554, and P value of 0.140, it is found that the distribution panel equipped with the developed sensor module has high reliability.

The Effects of Lift-Off from Wall Thinning Signal in Pulsed Eddy Current Testing

  • Park, Duck-Gun;Angani, C.S.;Kishore, M.B.;Kim, C.G.;Lee, D.H.
    • Journal of Magnetics
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    • v.17 no.4
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    • pp.298-301
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    • 2012
  • In order to know the effect of surface irregularity in the detection of local wall thinning of pipeline using pulsed eddy current (PEC), the lift-off effects on PEC signal have been investigated. Three kinds of parameters in the PEC signal, which is "peak amplitude", "time to peak amplitude" and "time to zero crossing" are analyzed to separate the lift-off effects in the PEC signal. The distance from sensor to the bottom of sample which is the total thickness of combined insulator and sample is kept constant. The magnitude of the differential peak amplitude is increased with increasing sample thickness, the time to peak amplitude is increased with increasing the sample thickness. To determine the effect of lift-off, a number of balanced transient responses combining wall thinning locations and lift-off distances were plotted.