• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.100-108
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• 1995

Heat transfer plays a critical role in determining interface location and shape in ZMR process, which is used for the fabrication of silicon - on - insulator structure. In this work, the two - dimensional pseudo - steady - state ZMR model has been developed that can simulate the heat transfer process during ZMR process. It contains the radiation, convection and conduction heat transfer and determines the interface shapes. Numerical solutions from the model include flow field in the molten zone, temperature field in the full SOl structure and the location of solid/liquid interface in the silicon thin film and silicon substrate. We examined the effects of the various system parameters on the temperature profiles and the interface shape.

• Biomolecules & Therapeutics
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• v.21 no.2
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• pp.161-169
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• 2013

The objective of this study was to enhance the oral bioavailability (BA) of zanamivir (ZMR) by increasing its intestinal permeability using permeation enhancers (PE). Four different classes of PEs (Labrasol$^{(R)}$, sodium cholate, sodium caprate, hydroxypropyl ${\beta}$-cyclodextrin) were investigated for their ability to enhance the permeation of ZMR across Caco-2 cell monolayers. The flux and $P_{app}$ of ZMR in the presence of sodium caprate (SC) was significantly higher than other PEs in comparison to control, and was selected for further investigation. All concentrations of SC (10-200 mM) demonstrated enhanced flux of ZMR in comparison to control. The highest flux (13 folds higher than control) was achieved for the formulation with highest SC concentration (200 mM). The relative BA of ZMR formulation containing SC (PO-SC) in plasma at a dose of 10 mg/kg following oral administration in rats was 317.65% in comparison to control formulation (PO-C). Besides, the $AUC_{0-24\;h}$ of ZMR in the lungs following oral administration of PO-SC was $125.22{\pm}27.25$ ng hr $ml^{-1}$ with a $C_{max}$ of $156.00{\pm}24.00$ ng/ml reached at $0.50{\pm}0.00$ h. But, there was no ZMR detected in the lungs following administration of control formulation (PO-C). The findings of this study indicated that the oral formulation PO-SC containing ZMR and SC was able to enhance the BA of ZMR in plasma to an appropriate amount that would make ZMR available in lungs at a concentration higher (>10 ng/ml) than the $IC_{50}$ concentration of influenza virus (0.64-7.9 ng/ml) to exert its therapeutic effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.53-62
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• 1992

In Zone Melting Recrystallization(ZMR) of SOl structure, thin silicon films have been recrystallized by artificial control of beam intensity profile which was obtained by tilting of upper elliptical reflector. Temperature profiles and gradients near solidification interface were calculated by numerical simulation for analysis of asymmetric line heating effect. The larger the tilting angle of the upper reflector, the larger the degree of supercooling at liquid and the interdefect spacing in thin silicon films. Major defects were continuous subgrainboundaries. Isolated threading dislocations were observed in the case of the film having low defect density. We have found that the thin silicon films were recrystallized into (100) textured single crystals by cross-sectional TEM and thin film X-ray diffraction analysis.

• Economic and Environmental Geology
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• v.53 no.6
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• pp.695-701
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• 2020

This study aimed to monitor a pilot-scale vertical flow reactor (VFR) system being operated in long-term for water quality control of pH-neutral mine drainage containing Fe, Mn and As, discharged in D mine site. The treatment systems of VFR and zero manganese reactor (ZMR) consisted of sand/limestone, and steel slag/limestone, respectively. The systems were operated during about six months in order to evaluate their long-term treatment efficiency It was observed that both pH and alkalinity of mine drainage were remarkably increased and more than 98% of Fe, As and Mn ions was continuously removed during the tested period of time. In conclusion, the field results of this work demonstrated that the vertical flow reactor system can effectively treat mine drainage contaminated by Fe, As and Mn.

• Journal of Microbiology and Biotechnology
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• v.31 no.5
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• pp.696-704
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• 2021

Levan is an industrially important, functional biopolymer with considerable applications in the food and pharmaceutical fields owing to its safety and biocompatibility. Here, levan-type exopolysaccharide produced by Pantoea agglomerans ZMR7 was purified by cold ethanol precipitation and characterized using TLC, FTIR, ¹H, and ¹³C NMR spectroscopy. The maximum production of levan (28.4 g/l) was achieved when sucrose and ammonium chloride were used as carbon and nitrogen sources, respectively, at 35℃ and an initial pH of 8.0. Some biomedical applications of levan like antitumor, antiparasitic, and antioxidant activities were investigated in vitro. The results revealed the ability of levan at different concentrations to decrease the viability of rhabdomyosarcoma and breast cancer cells compared with untreated cancer cells. Levan appeared also to have high antiparasitic activity against the promastigote of Leishmania tropica. Furthermore, levan had strong DPPH radical scavenging (antioxidant) activity. These findings suggest that levan produced by P. agglomerans ZMR7 can serve as a natural biopolymer candidate for the pharmaceutical and medical fields.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.180-190
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• 1992

Some solutions to several major problems in ZMR such as agglomeration of polysilicon, slips and local substrate melting are described. Experiments are performed with varying polysilicon thickness and capping oxide thickness. The aggmeration can be eliminated when nitrogen is introduced at the capping oxide layer-to-polysilicon interface and polysilicon-to-buried oxide layer interface by annealing the SOI samples at $1100^{\circ}$ in $NH_3$ ambient for three hours. The slips and local substrate melting are removed when the back surface of silicon substrate is sandblasted to produce the back surface roughness of about $20{\mu}m$. The subboundary spacing increases with increasing polysilicon thickness and the uniformity of recrystallized SOI film thickness improves with increasing capping oxide thickness, improving the quality of recrystallized SOI film. When the polysilicon thickness is about $1.0{\mu}m$ and the capping oxide thickness is $2.5{\mu}m$, the thickness variation of the recrystallized SOI film is about ${\pm}200{\AA}$ and the subboundary spacing is about $70-120{\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.412-414
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• 2004

We have developed nucleation control methods applicable to a zone-melting recrystallization excimer laser annealing process for poly-Si films. Ribbon-shaped Si grains of 2 ${\mu}m$-width were successfully aligned side by side by means of a comb-shaped beam, and we have successfully fabricated TFTs with channels formed in those grains. Electron mobility in the TFTs is as high as 677-$cm^2$/Vs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.527-533
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• 1990

Zone-melting recrystallization (ZMR) system using two graphite heaters(a stationary sheet and a narrow movable bar) was constructed and implemented in recrystallization op Si films on insulating layers. The recystallized Si films were examined by Nomarski contrast optical microscopy after Dash etching, transmission electron diffraction pattern, and x-ray diffraction. With optimum conditions of process parameters(input powers of the bottom and upper heater, scanning speed of the upper heater, and the gap between sample and upper heater), the recrystallized Si layer has a (100) texture, but contains many subboundaries. The subgrains are misoriented by < 0.5\ulcorner and the average spacing between subboundaries is about 25\ulcorner.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.