Zone-Melting Recrystallization of Si Films on $SiO_2$ with a Graphite-Strip-Heater

흑연 막대 발열체를 이용한 SOI구조의 Zone-melting 재결정화 연구

Zone-melting recrystallization (ZMR) system using two graphite heaters(a stationary sheet and a narrow movable bar) was constructed and implemented in recrystallization op Si films on insulating layers. The recystallized Si films were examined by Nomarski contrast optical microscopy after Dash etching, transmission electron diffraction pattern, and x-ray diffraction. With optimum conditions of process parameters(input powers of the bottom and upper heater, scanning speed of the upper heater, and the gap between sample and upper heater), the recrystallized Si layer has a (100) texture, but contains many subboundaries. The subgrains are misoriented by < 0.5\ulcorner and the average spacing between subboundaries is about 25\ulcorner.