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Preparation of ZrVFe Nano Powders by Laser Ablation (Laser Ablation법에 의한 ZrVFe 합금 나노분말 제조)

  • Kil Daesup;Suh Yongjae;Jang Heedong;Lee Jaechen;Song Changbin;Kim Wonbaek
    • Korean Journal of Materials Research
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    • v.15 no.4
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    • pp.257-262
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    • 2005
  • Nano-sized ZrVFe alloy powders were prepared by the ablation of powder compact in alcobol using a Nd-YAG pulsed Laser. The $Zr_{57}V_{35.}8Fe_{7.2}$ alloy commercially designated as ST707 has long been known as the ideal solution for various vacuum applications. The target for the ablation was sintered pellets of $Zr_{57}V_{35.}8Fe_{7.2}$ alloy powder. The alloy was prepared by arc melting and Hydride-DeHydride method. The ablated powders were mostly circular having fairly large size distribution smaller than 200 nm in all cases. The X-ray diffraction study revealed that the ablated alloy retained the crystal structure of the target alloy. Nevertheless, Fe and V contents in the ablated powder were lower than those in the target alloy. This was believed to result from the high vapour pressures of Fe and V compared to that of Zr. The size of the powders ablated at high energy fluence tends to decrease due at least partly to the breakdown of previously made ones.

A Study on the Properties of Laser-Welded Boron Steel for Hot Stamping According to the Heat-Treatment Conditions (핫스탬핑용 보론 강판의 레이저 용접부에 대한 열처리 조건에 따른 특성 연구)

  • Hwang, Seok-Hwan;Nam, Ki-Woo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.3
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    • pp.319-324
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    • 2012
  • The hot-stamping technique is a forming method for manufacturing high-strength parts, in which the part is cooled rapidly after press forming above the austenite transformation temperature. Boron steel, which contains a very small amount of boron, is one of the materials used for hot stamping. The purpose of this study is to investigate the microstructure and mechanical properties according to the heat-treatment conditions. Die-quenching from various temperatures was conducted for different elapsed heat-treatment times. Laser-welded boron steel after quenching has a tensile strength of 1454 MPa and an elongation of 6 %. It has 94 % of the tensile strength of the base metal (1522 MPa). These properties can provide practical information for the use of boron steels for hot stamping.

Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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Intermediate band solar cells with ZnTe:Cr thin films grown on p-Si substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.247.1-247.1
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    • 2016
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

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Effect of Lu3Al5O12:Ce3+ and (Sr,Ca)AlSiN3:Eu2+ Phosphor Content on Glass Conversion Lens for High-Power White LED

  • Lee, Hyo-Sung;Hwang, Jong Hee;Lim, Tae-Young;Kim, Jin-Ho;Jeon, Dae-Woo;Jung, Hyun-Suk;Lee, Mi Jai
    • Journal of the Korean Ceramic Society
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    • v.52 no.4
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    • pp.229-233
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    • 2015
  • Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

ZnTe:O/CdS/ZnO intermediate band solar cells grown on ITO/glass substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.197.2-197.2
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    • 2015
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

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Development of Single-Frame PIV Velocity Field Measurement Technique Using a High Resolution CCD Camera (고해상도 CCD카메라를 이용한 Single-Frame PIV 속도장 측정기법 개발)

  • Lee, Sang-Joon;Shin, Dae-Sig
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.1
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    • pp.21-28
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    • 2000
  • Although commercial PIV systems have been widely used for the non-intrusive velocity field measurement of fluid flows, they are still under development and have considerable room for improvement. In this study, a single-frame double-exposure PIV system using a high-resolution CCD camera was developed. A pulsed Nd:Yag laser and high-resolution CCD camera were synchronized by a home-made control circuit. In order to resolve the directional ambiguity problem encountered in the single-frame PIV technique, the second particle image was genuinely shifted in the CCD sensor array during the time interval dt. The velocity vector field was determined by calculating the displacement vector at each interrogation window using cross-correlation with 50% overlapping. In order to check the effect of spatial resolution of CCD camera on the accuracy of PIV velocity field measurement, the developed PIV system with three different resolution modes of the CCD camera (512 ${\times}$ 512, lK ${\times}$ IK, 2K ${\times}$ 2K) was applied to a turbulent flow which simulate the Zn plating process of a steel strip. The experimental model consists of a snout and a moving belt. Aluminum flakes about $1{\mu}m$ diameter were used as scattering particles for the liquid flow in the zinc pot and the gas flow above the zinc surface was seeded with atomized olive oil with an average diameter of 1-$3{\mu}m$. Velocity field measurements were carried out at the strip speed $V_s$=1.0 m/s. The 2K ${\times}$ 2K high-resolution PIV technique was significantly superior compared to the smaller pixel resolution PIV system. For the cases of 512 ${\times}$ 512 and 1K ${\times}$ 1K pixel resolution PIV system, it was difficult to get accurate flow structure of viscous flow near the wall and small vortex structure in the region of large velocity gradient.

Optical Characterization of Sensory Rhodopsin II Thin Films using a Near-field Scanning Microwave Microscope (근접장 마이크로파 현미경을 이용한 로돕신의 광학적 특성 연구)

  • Yu, Kyung-Son;Kim, Song-Hui;Yoon, Young-Woon;Lee, Kie-Jin;Lee, Jung-Ha;Choi, Ah-Reum;Jung, Kwang-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.80-85
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    • 2007
  • We report the electro-optical properties of the sensory rhodopsin II using a near-field scanning microwave microscope(NSMM). Rhodopsin was known as a photoreceptor pigment with a retinal as a chromophore via a protonated Schiff base and consists of seven ${\alpha}-helical$ transmembrane segments. The sensory rhodopsin II, expressing E. coli UT5600 with endogenous retinal biosynthesis system and purified with $Ni^{-2}-NTA$ affinity chromatography in the presence of 0.02 % DM (Dodecyl Maltoside) from Natronomonas pharaonis. We measured the absorption spectra and the transients difference of sensory rhodopsin II from Natronomonas pharaonis using a UV/VIS spectrophotometer with Nd-Yag Laser (532 nm). The absorption spectra of NpSR II showed a typical rhodopsin spectrum with a left shoulder region and the photointermediates spectra of NpSR II-ground state (${\lambda}max=498\;nm$), NpSR II-M state (${\lambda}max=390\;nm$), and NpSR II-O state (${\lambda}max=550\;nm$) during the photocycle. The observed photocycle reaction was confirmed by measuring the microwave reflection coefficient $S_{11}$ at an operating frequency of f=3.93-3.95 GHz and compared with the results of a photocycle of NpSR II.

Surface Treatment in Edge Position of Spheroidal Cast Iron for Mold Materials by Using High Power Diode Laser (High Power Diode Laser을 이용한 금형재료용 구상화 주철의 모서리부 표면처리)

  • Hwang, Hyun-Tae;Song, Hyeon-Soo;Kim, Jung-Do;Song, Moo-Keun;Kim, Young-Kuk
    • Korean Journal of Materials Research
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    • v.19 no.9
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    • pp.457-461
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    • 2009
  • Recently, metal molding has become essential not only for automobile parts, but also mass production, and has greatly influenced production costs as well as the quality of products. Its surface has been treated by carburizing, nitriding and induction hardening, but these existing treatments cause considerable deformation and increase the expense of postprocessing after treatment; furthermore, these treatments cannot be easily applied to parts that requiring the hardening of only a certain section. This is because the treatment cannot heat the material homogeneously, nor can it heat all of it. Laser surface treatment was developed to overcome these disadvantages, and, when the laser beam is irradiated on the surface and laser speed is appropriate, the laser focal position is rapidly heated and the thermal energy of surface penetrates the material after irradiation, finally imbuing it with a new mechanical characteristic by the process of self-quenching. This research estimates the material characteristic after efficient and functional surface treatment using HPDL, which is more efficient than the existing CW Nd:YAG laser heat source. To estimate this, microstructural changes and hardness characteristics of three parts (the surface treatment part, heat affect zone, and parental material) are observed with the change of laser beam speed and surface temperature. Moreover, the depth of the hardened area is observed with the change of the laser beam speed and temperature.

Effect of $\alpha-SiC $seed on microstructure and fracture toughness of pressureless-sintered $\beta-SiC$ ($\alpha-SiC $seed의 첨가가 상압소결된 $\beta-SiC$의 미세구조와 파괴인성에 미치는 영향)

  • Young-Wook Kim;Won-Joong Kim;Kyeong-Sik Cho;Heon -Jin Choi
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.18-26
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    • 1997
  • $\beta-SiC $powder with or without the addition of 1 wt% of $\alpha-SiC$ particles (seeds) was pressureless-sintered at $1950^{\circ}C$ for 0.5, 2 and 4 h using $Y_3Al_5O_{12}$ (yttrium aluminum garnet, YAG) as a sintering aid. The introduction of $\alpha-SiC$ seeds into $\beta-SiC$ accelerated :he grain growth of elongated large grains during sintering, resulting in the coarser microstructure. The fracture toughnesses of materials with $\alpha$-SiC seeds and without $\alpha-SiC$ seeds sintered for 4 h were 7.5 and 6.1 $MPa\cdot \textrm m^{1/2}$, respectively. Higher fracture toughness of the material with seeds was due to the enhanced bridging by elongated grains, resulting from coarser microstructure.

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