• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.4
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• pp.261-268
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• 2020

Transformer saturation in full bridge (FB) isolated DC-DC converters is caused by uneven switching speeds and voltage drops in semiconductor devices and mismatched gate signals. In order to prevent transformer saturation, most popular and widely used approach is to insert a capacitor in series with the transformer windings. This study conducts extensive analyses on transformer saturation and the effect of DC blocking capacitors when they are placed in the primary or secondary windings of a transformer. The effect of the DC blocking capacitors is verified in voltage-fed and current-fed FB converters.

• Journal of Magnetics
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• v.17 no.2
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• pp.115-123
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• 2012

Contactless electrical power transfer through an air gap is a revived technology for supplying energy to many movable applications including Maglev. In this paper, magnetic equivalent circuits and analytical models of contactless electrical power transfer systems are developed and evaluated through experiment. Overall coupling coefficient and overall efficiency are introduced as means for evaluating the systems' performance. Compensating capacitors in primary and secondary sides of the systems improve the overall coupling coefficient and overall efficiency. Using the analytical models, the effects of different parameters and variables such as air gap and load current are analyzed to give a high coupling coefficient and an improved efficiency of power transfer for different compensation structures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.43-50
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• 2007

In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.4 no.1
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• pp.25-31
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• 1979

All the resitors in the active RC filter networks can be relplaced by the switched capacitors. Therefore, An SC filter circuit can be fully integrated using MOS technology. A switched capacitor is much better than a resistor in temperature and linearity characteristics, and the former can be fabricated on the much smaller area then the latter. In this paper, It is given the generalized disign method of the active SC filter from the active RC filter using Bilinear Z-transformation. By SC filtering Techniques using Bilinear Z-transform, It enalbes us to realize the FDNR and Gyrator filters, which could not be realized in the exsisting designs, and it permits the processing of signals at much higher frequenies that many previous designs do. Experiments show that the response of the SC active filter is similiar to that of its prototype active RC filter.

• Journal of Information Display
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• v.9 no.2
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1544-1550
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• 2009

In this paper, a new single phase voltage sag/swell compensator using direct power conversion is proposed. A new compensator consists of input/output filter, series transformer and direct ac-ac converter, which is a single-phase back-to-back PWM converter without dc-link capacitors. Advantages of the proposed compensator include: simple power circuit by eliminating dc link electrolytic capacitors and thereby, improved reliability and increased life time of the entire compensator; simple PWM strategy or compensating voltage sag/swell at the same time and reduced switching losses in the ac-ac converter. Further, the proposed scheme is able to adopt simple switch commutation method without requiring complex four-step commutation method that is commonly employed in the direct power conversion. Simulation and experimental results are shown to demonstrate the advantages of the new compensator and PWM strategy. A 220V, 3kVA single-phase compensator based on the digital signal processor controller is built and tested.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.229-232
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• 2002

In this paper, etching characteristics of Zr-silicate in Ar/ClrCH4 plasma is studied, and possible plasma damage is investigated by fabricating MIS capacitors. We'could increase the selectivity to near 2 while keeping the etch rate of Zr-silicate to about 70 nm/min. Leakage current and flat band voltage shift of PUZr-silicate/si capacitors are measured before and after plasma etching. Using capacitor patterns with the same area but different circumference lengths, we try to separate etching damage mechanisms and to optimize the process. The leakage current of 1.2$\times$10-3 A/cm2 and smaller capacitance variation of 0.2 nF at -2V are obtained in Ar/Cl2/CF4 plasma at 200 W RF power

• ETRI Journal
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• v.29 no.4
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• pp.470-476
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• 2007

In this paper, a versatile three-input five-output universal capacitor-grounded voltage-mode filter is proposed. The circuit employs two differential voltage current conveyors as active elements together with two grounded capacitors and four resistors as passive elements. The proposed configuration can be used as either a single-input five-output or three-input two-output. Unlike the previously reported works, it can simultaneously realize five different generic filtering signals: lowpass, bandpass, highpass, bandreject, and allpass. It still maintains the following advantages: (i) the employment of all grounded capacitors, (ii) no need to employ inverting-type input signals, (iii) no need to impose component choice, (iv) orthogonal control of the resonance angular frequency ${\omega}_o$ and the quality factor Q, and (v) low active and passive sensitivity performances.