• 제목/요약/키워드: Y-capacitors

검색결과 1,424건 처리시간 0.026초

부하단락이 빈번히 발생하는 경우에 적합한 교류-직류 전력변환기 (A New Ac-to-Dc Power Converter for a Load with Frequent Short Circuits)

  • 노의철;김인동
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제48권7호
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    • pp.384-390
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    • 1999
  • This paper describes a new ac-to-dc power converter using a multilevel converter. A conventional multilevel ac-to-dc converter has large output dc filter capacitors. When a short circuit happens in a load, the stored energy in the capacitors should be discharged through the load with a high short circuit current. The high current may cause considerable damage to the capacitors and the load. The output dc capacitors of the proposed converter do not discharge even under load short circuit condition. In the case of a load short circuit, the capacitors become a floating state immediately and remain in the state. Then the stored capacitor energy is supplied to the load again as soon as the short circuit has been cleared. Therefore, the rising time of the load voltage can be significantly reduced. This feature satisfies the requirement of a power supply for a load with frequent short circuits. The proposed converter has the characteristics of a simplified structure, a reduced cost, weight, and volume compared with conventional power supplies with frequent output short circuits. Experimental results are presented to verify the usefulness of the proposed converter.

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탄소나노튜브를 첨가한 4H-SiC MOS 캐패시터의 전기적 특성 (Electrical Characteristics of Carbon Nanotube Embedded 4H-SiC MOS Capacitors)

  • 이태섭;구상모
    • 한국전기전자재료학회논문지
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    • 제27권9호
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    • pp.547-550
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    • 2014
  • In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material

  • Park, Byoung-Jun;Lee, Hye-Ryeong;Cho, Kyoung-Ah;Kim, Sang-Sig
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.699-705
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    • 2008
  • Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.

방사상 배전계통의 손실감소 및 전압보상을 위한 커패시터 최적 배치 및 운용 (Optimal Capacitor Placement and Operation for Loss reduction and Improvement of Voltage Profile in Radial Distribution Systems)

  • 김태균;백영기;김규호;유석구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 D
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    • pp.1009-1011
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    • 1997
  • This paper presents an optimization method which determines locations and size of capacitors simultaneously while minimizing power losses and improving voltage profile in radial distribution systems. Especially, the cost function associated with capacitor placement is considered as step function due to banks of standard discrete capacities. Genetic algorithms(GA) are used to obtain efficiently the solution of the cost function associated with capacitors which is non-continuous and non-differentiable function. The strings in GA consist of the node number index and size of capacitors to be installed. The length mutation operator, which is able to change the length of strings in each generation, is used. The proposed method which determines locations and size of capacitors simultaneously can reduce power losses and improve' voltage profile with capacitors of minimum size. Its efficiency is proved through the application in radial distribution systems.

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내장형 축전기용 유전재료 (Dielectric Materials for Embedded Capacitors)

  • 이호영
    • 마이크로전자및패키징학회지
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    • 제9권2호
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    • pp.61-67
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    • 2002
  • 최근 전자제품의 경박단소화 추세는 전자기기의 크기와 가격의 감소를 이끌어냈으며, 이러한 추세는 당분간 지속될 전망이다. 이에 따라 내장형 수동소자기술에 대한 연구가 활발히 진행되고 있다. 내장형 축전기 제조기술의 핵심은 높은 유전상수를 갖는 재료를 저온에서 인쇄회로판 위에 형성하는 것이다. 본 고에서는 내장형 축전기용 유전재료로 사용되는 재료들에 관하여 간략하게 소개하고자 한다.

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An Improved SVPWM Control of Voltage Imbalance in Capacitors of a Single-Phase Multilevel Inverter

  • Ramirez, Fernando Arturo;Arjona, Marco A.
    • Journal of Power Electronics
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    • 제15권5호
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    • pp.1235-1243
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    • 2015
  • This paper presents a modified Space Vector Pulse Width Modulation Technique (SVPWM), which solves the well-known problem of voltage imbalance in the capacitors of a single-phase multilevel inverter. The proposed solution is based on the measurement of DC voltage levels at each capacitor of the inverter DC bus. The measurements are then used to adjust the size of the active vectors within the SVPWM algorithm to keep the voltage waveform sinusoidal regardless of any voltage imbalance on the DC link capacitors. When a voltage deviation exceeds a predetermined hysteresis band, the correspondent voltage vector is restricted to restore the voltage level to an acceptable threshold. Hence, the need for external voltage regulators for the voltage capacitors is eliminated. The functionality of the proposed algorithm is successfully demonstrated through simulations and experiments on a grid tied application.

A Novel Two Phase Interleaved LLC Series Resonant Converter using a Phase of the Resonant Capacitor

  • Yi, Kang-Hyun;Moon, Gun-Woo
    • Journal of Power Electronics
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    • 제8권3호
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    • pp.275-279
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    • 2008
  • An LLC series resonant converter has many unique characteristics and improvements over PWM topologies. However, many output capacitors are needed in parallel to satisfy output voltage ripple and the rated ripple current of the capacitors. This paper deals with a novel two phase interleaved LLC resonant converter using a phase of the resonant capacitor. The proposed converter can satisfy output voltage ripple and a rated ripple current of capacitors with few output capacitors, relatively. The operation and features are considered in detail and a prototype with a 12V-100A output is investigated.

7-레벨 PWM 인버터의 직렬 커패시터 입력전원의 전압균형제어 (Voltage Balancing Control of Input Voltage Source Employing Series-connected Capacitors in 7-level PWM Inverter)

  • 김진산;강필순
    • 전기학회논문지
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    • 제67권2호
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    • pp.209-215
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    • 2018
  • This paper present a 7-level PWM inverter adopting voltage balancing control to series-connected input capacitors. The prior proposed 7-level PWM inverter consists of dc input source, three series-connected capacitors, two bidirectional switch modules, and an H-bridge. This circuit topology is useful to increase the number of output voltage levels, however it fails to generate 7-level in output voltage without consideration for voltage balancing among series-connected capacitors. Capacitor voltage imbalance is caused on the different period between charging and discharging of capacitor. To solve this problem, we uses the amplitude modulation of carrier wave, which is used to produce the center output voltage level. To verify the validity of the proposed control method, we carried out computer-aided simulation and experiments using a prototype.

Fatigue characteristics of $Pb(Zr,Ti)O_3$ capacitors on donor doping

  • Yang, Bee Lyong
    • 열처리공학회지
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    • 제15권3호
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    • pp.113-117
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    • 2002
  • Fatigue characteristics of ferroelectric $Pb(Zr,Ti)O_3$ (PZT) based capacitors through donor doping is reported in this paper. La substitution up to 10% were carried out to study systematically the fatigue behaviors of epitaxial ferroelectric capacitors grown on Si using $(Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10% La show sufficient low voltage switched polarization and fatigue free performance. Systematic decrease in the tetragonality of the ferroelectric phase (i.e., c/a ratio) results in the corresponding reduction in coercive voltage, sufficient remnant polarization at 1.5-3V, and good fatigue property.

Novel two phase interleaved LLC series resonant converter using a phase of the resonant capacitor

  • Yi, Kang-Hyun;Moon, Gun-Woo;Heo, Tae-Won
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2008년도 하계학술대회 논문집
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    • pp.526-528
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    • 2008
  • LLC series resonant converter has many unique characteristics and improvement over PWM topologies. However, many output capacitors should be needed in parallel to satisfy an output voltage ripple and a rated ripple current of the capacitors. This paper is deal with a novel two phase interleaved LLC resonant converter using a phase of the resonant capacitor. The proposed converter can satisfy output voltage ripple and a rated ripple current of capacitors with few output capacitors, relatively. The operation and features is considered in detail and a prototype with a 12V-100A output is investigated.

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