• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1379-1380
• /
• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Korean Journal of Optics and Photonics
• /
• v.10 no.5
• /
• pp.424-429
• /
• 1999

The amplifier properties of single distributed feedback dye laser with 106 ps pulse width and 616 nm wavelength were invested using only one XeCl-excimer laser as pump source. For optimized amplification of DFDL, the three-stage amplifiers were arranged with increasing cross-section and accordingly increasing pump energies. The first AmpI, II stages were dye cell of 5 mm, 10 mm and contained a $6{\times}10^{-4}$ [mol/l](solvent : Methanol) of Rhodamine 610. Double-pass amplification in the AmPII was measured to suppress the ASE by using a diffraction grating. The beam intensity of AmpI, II was saturated with a gain of respectively 10 and 48. The last AmpIII was Bethune cell of 30 mm and contained a $3{\times}10^ {-4}$ [mol/l] (solvent : Ethanol) of Rhodamine 610. In the single-pass and double-pass amplification, the output energy was obtained 168.2 $\mu$J and 471$\mu$J respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.634-638
• /
• 2003

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1440-1442
• /
• 1996

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.430-431
• /
• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.445-446
• /
• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 전자공학회논문지 IE
• /
• v.43 no.2
• /
• pp.11-15
• /
• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.679-683
• /
• 2005

In this study, we investigate the characteristic of the poly-Si grain and morphology influenced by XeCl excimer laser system. The stable laser beam source is basic requested; the irradiation beam through optical lens module is more important which limit the grain size smaller than $0.5{\mu}m$. The homogenization lens designs control the poly-Si grain size; so we hardly get enlarge grain size by one laser irradiation scan.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.512-517
• /
• 1999

Quenched dye laser (QDL), which operates with relaxation oscillation mode, is one of the most powerful source for ultra-short pulse light. In this paper, the output characteristics of QDL is theoretically analyzed by a computer simulation. The QDL is assumed that the laser dye is Rhodamine 6G which has the oscillation wavelength of 590 nrn and that the active length is 5 mm and that the pumping source is XeCllaser which has oscillation wavelength of 308 nm. It is revealed ilim the pulse width of short cavity dye laser reduced less than 1/100 than pumping pulse duration and has the linear relationship with spatial width of pumping beam approximately. In addition, it is revealed that the short cavity dye laser is a powerful candidate of pulse width variable light source, which is adjusted by spatial size of pumping beam_ beam_

• Journal of Energy Engineering
• /
• v.10 no.4
• /
• pp.379-386
• /
• 2001

This experimental study deals with on Nitric Oxide Formation & Reduction in Industrial Bunner. In this study, Laser-induced fluorescence (LIF) techniques have been used for quantitative measurements of Nitric Oxide. The NO A-X (0, 0) Vibrational band around 226 nm was excited using a XeCl excimer-pumped dye laser. And on-line excitation used $P_{21}+Q_1(14.5)/R_{12}+Q_2(20.5)/P_1(23.5)$ transition, for minimizing the other interferential effect. The measurements were taken NO concentration distribution in double swirling diffusion flame. In this swirl burner, NO concentration in downstream fo the flame decrease as primary/secondary air ratio increases.