• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.434-438
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• 2003

XeCl 엑시머 레이저로 펌핑되는 쌍공진기형 색소레이저와 2단 증폭시스템을 개발하여 원격계측 시스템에 적합한 두 개의 파장을 동시 또는 순차적으로 출력하였다. 개발된 쌍공진기는 1200 g/mm의 회절격자를 갖는 grazing-incidence 방법에서 제 1차 및 제 2차 회절차수를 이용하여 구성되었다. 출력특성은 스펙트럼 선폭이 10 pm이하이고, 펌프 에너지에 대하 전체효율은 6% 이상이다. 또한, 파장가변 영역은 제 1차 및 제 2차의 회절차수에 대해 각각 434-470 nm, 436-468 nm 이며, 2단의 증폭기의 증폭이득은 37dB, 추출효율은 9%이다. 개발된 레이저 증폭시스템에서 Coumarine-450의 색소로 발진하고, 이의 출력 6 mJ을 원격계측시스템에 적용하여 수원상공의 NO$_2$의 가스농도분포를 측정하였다. 이 결과 개발된 색소레이저 시스템은 원격계측 시스템의 광원으로 매우 적합함을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.679-683
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• 2005

In this study, we investigate the characteristic of the poly-Si grain and morphology influenced by XeCl excimer laser system. The stable laser beam source is basic requested; the irradiation beam through optical lens module is more important which limit the grain size smaller than $0.5{\mu}m$. The homogenization lens designs control the poly-Si grain size; so we hardly get enlarge grain size by one laser irradiation scan.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.57-65
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• 1993

Small XeCl laser of charge transfer discharge excitation was fabricated and output charateristics were investigated according to gas mixture ratio. Beam cross section of 2.7cm${\times}$1.5cm was obtained by constructing excimer laser which preionization is operated automatically and which has chang profile electrode. According to the component gas mixture ratio, the condition of maximum output energy, efficiency were investigated. The maximum energy, efficiency and specific energy were obtained 230 mJ, 1.6% and 1.1 J/l, respectively. The long pulse effect is observed by constructing low peaking to main capacitance ratio of 1:3.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.173-176
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• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.424-429
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• 1999

The amplifier properties of single distributed feedback dye laser with 106 ps pulse width and 616 nm wavelength were invested using only one XeCl-excimer laser as pump source. For optimized amplification of DFDL, the three-stage amplifiers were arranged with increasing cross-section and accordingly increasing pump energies. The first AmpI, II stages were dye cell of 5 mm, 10 mm and contained a $6{\times}10^{-4}$ [mol/l](solvent : Methanol) of Rhodamine 610. Double-pass amplification in the AmPII was measured to suppress the ASE by using a diffraction grating. The beam intensity of AmpI, II was saturated with a gain of respectively 10 and 48. The last AmpIII was Bethune cell of 30 mm and contained a $3{\times}10^ {-4}$ [mol/l] (solvent : Ethanol) of Rhodamine 610. In the single-pass and double-pass amplification, the output energy was obtained 168.2 $\mu$J and 471$\mu$J respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• ETRI Journal
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• v.25 no.4
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1239-1242
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• 1994

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}-Si:H$) and LPCVD(${\alpha}-Si$). The electrical and optical properties and surface roughness of crystallized thin films have been measured. The dc conductivities, crystallinity and surface roughness of the films increased as the laser energy density and shot density were increased. Also, we have investigated the effects of 2-step annealing employing SPC and ELA. The properties of 2-step annealed films were better than those of films annealed by ELA only.