한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

  • Kang, Soo-Hee (Information Display Research Center, Korea Electronics Technology Institute, Department of Electrical and Electronics Engineering, Yonsei University) ;
  • Kim, Yong-Hoon (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jin-Woo (Department of Electrical and Electronics Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical and Electronics Engineering, Yonsei University) ;
  • Han, Jeong-In (Information Display Research Center, Korea Electronics Technology Institute)
  • Published : 2006.08.22
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Abstract

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

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