Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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An Analysis of Characteristics of PECVD and LPCVD a-Si Films Crystallized by Excimer Laser

엑시머 레이저를 이용하여 결정화한 PECVD 및 LPCVD 비정질 실리콘 박막의 특성 분석

  • Jang, K.H. (Department of Electrical Eng., Seoul National University) ;
  • Lee, S.K. (Department of Electrical Eng., Seoul National University) ;
  • Jun, M.C. (Department of Electrical Eng., Seoul National University) ;
  • Han, M.K. (Department of Electrical Eng., Seoul National University)
  • Published : 1994.07.21
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Abstract

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}-Si:H$) and LPCVD(${\alpha}-Si$). The electrical and optical properties and surface roughness of crystallized thin films have been measured. The dc conductivities, crystallinity and surface roughness of the films increased as the laser energy density and shot density were increased. Also, we have investigated the effects of 2-step annealing employing SPC and ELA. The properties of 2-step annealed films were better than those of films annealed by ELA only.

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