• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.268-271
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• 1993

Discharge pumped high power excimer laser is a very useful light source of ultraviolet region. In this paper. the design and operation characteristics of UV pre-ionized discharge pumped XeCl laser are discussed. Maximum output power of 890mJ at the efficiency of 1.4% was achieved with 35kV charging voltage, 3.4atm of total pressure and 10pps of pulse repetition rate. Optimum HCl pressure is considered to be between 2.5 and 3.5torr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.430-431
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• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.386-393
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• 1994

We have investigated output characteristics of XeCI excimer laser excited by transeverse electronbeam. We used e-beam output of 880 kV, 21 kA (70 ns, FWHM) and controlled current density of e-beam by pulsed magnetic coil (4.7 kG) which was fabricated around an e-beam diode (A-K gap is 21 mm) and laser chamber. We have obtained 35 J (4 atm) of e-beam deposition energy injected into laser media. The deposition energy was converted from an exposure area of Radcolor film and rising pressure of gas media which is measured by pressure jump method. The excited volume of $320cm^{3}$ was calculated. The maximum efficiency of 1.7% was obtained with the mixing ratio of HCllXe/Ar==0.2/ 6.3/93.5% and total pressure of 3 atm. Also laser output energy and specific energy were obtained 0.52 J and 1.7 J/I, respectively. For the analysis of experimental results we have developed computer simulation code. From the good agreements with the results of experiment and simulation we could theoretically explain the XeCI* formation channel. relaxation channel, and absorption channel of 308 nm.308 nm.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.447-451
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• 1993

Long pulse XeCl excimer laser with 150 ns (FWHM) pulse duration is developed using a simple capacitor-charge transfer circuit. We measured the laser pulse width varying the gas mixture ratio and capacitance ratio, which dominantly affect the pulse width. In this way we can easily stretch the pulse width from short pulse to long pulse. The pulse width was stretched by 120 ns as the partial pressure of HC1 and Xe gas was reduced under constant gas mixture ratio ([Xe]/[HCl]= 15), and by varying the capacitance ratio (Cm/Cp) under fixed pressure, the pulse width was stretched by 60 ns.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1440-1442
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• 1996

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.445-446
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• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.634-638
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• 2003

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate