• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.86-90
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• 2006

Discharge of the flat lamp lighting source research are requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the f1at lamp lighting source to understand property of lighting source is very important. Distance of discharge electrode is 5.5mm and width is 16.5mm, we have measured electron temperature and electron density measured with single Langmuir probe in flat lamp. We have tested the discharge from 100 Torr to 300 Torr pressure. The pulse is rectangular pulse with frequency 20kHz and duty ratio 20%. In result, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.5-8
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• 2000

The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.379-382
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• 2000

The characteristics of Xe discharge lamp(Mercuryless lamp) are described in this paper. In this paper, FFL is operated by sine wave and pulsed source. We apply V-Q Lissajous' figure for the discharge measurements of FFL which has the electrodes covered with dielectric. When FFL is operated by sine wave source, the characteristics are similar to DBD(Dielectric Barrier Discharge) and SD(Silent Discharge). And we compared the characteristics of FFL which is operated with sine wave and pulsed discharge by using V-Q Lissajous' figure method. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. As the duty ratio increases the electric field becomes strong and much more xenon ions are produced. And the number of metastable xenon atoms seem to increase, therefore, the phosphor radiation after the cut off of voltage increases compared with the first peak of radiation. Consequently, the 172㎚ radiation becomes strong as the duty ratio increases.

• 전자공학회논문지 IE
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• v.44 no.1
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• pp.1-5
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• 2007

This experiment was analysed the discharge characteristics of FFL(flat fluorescent lamp). FFL is operated by sine and pulse wave source. We use FFL which has the electrodes covered with dielectric, observed the discharge characteristics of FFL by V-Q Lissajous' figure. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. When the duty ratio increases, the number of metastable xenon atoms seem to increase. Consequently, the 172nm radiation becomes strong as the duty ratio increases.

• Analytical Science and Technology
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• v.15 no.1
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• pp.7-14
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• 2002

Laser ablation ion trap mass spectrometry (LAITMS) was developed for the analysis of metal and ceramic samples. For this study, XeCl excimer laser (308 nm) was used for ablating the samples and ITMS was used as a detector. Samples were introduced from outside of a ring electrode and this way of sample introduction was very effective for solid samples when laser ablation was employed. Helium gas was used as a buffer gas, and its effect on sensitivity and some parameters (buffer gas pressure, ion storage time, and cut-off RF voltage) were studied. The optimized conditions were $1{\times}10^{-4}$ Torr of buffer gas pressure, 100 ms of ion storage time and $1150V_{p-p}$ of cut-off RF voltage. From that results, copper (Cu) and molybdenum (Mo) metals were tested with LAITMS and the mass spectra of these pure metals were compared with the natural abundance of isotope ratio. We also examined ceramic samples ($Al_2O_3$, $ZrO_2$) and represented the result of elemental analysis.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.46-53
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• 1998

A new method to form the double structured active layers of a-Si/a-SiN$_{x}$ of polycrystalline thin film transistor is proposed and poly-Si TFTs employed double structure active film are fabricated. Nitrogen ions were added to bottom amorphous silicon active film(a-SiN$_{x}$ ) and pure a-Si film deposition on a-SiN$_{x}$ was followed. The XeCl excimer laser was irradiated to crystallize double structure active film. The grain growth of upper a-Si film was also promoted in the double structured active layers of a-Si/a-SiN$_{x}$ due to the mitigation of solidification process of lower a-SiN$_{x}$ layer. Our experimental results show that the ratio of NH$_3$/SiH$_4$ is required to maintain below 0.11 for the reduction of contact resistance of n$^{+}$ poly-SiN$_{x}$ layer.r.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1522-1525
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• 2007

In this study, flat fluorescent lamps (FFLs) having surface discharge structures was fabricated by screen printing technique and were studied using spectraradiometer and square pulse power supply. Two types of FFLs having different shapes of electrodes (crosstype and line-type structure) were compared with variation of discharge shape and mixed gas ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.