• Economic and Environmental Geology
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• v.50 no.4
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• pp.313-324
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• 2017

Tsogttsetsii area, an intrusive complex associated with Cu mineralization, is located in the South Gobi, Mongolia. We performed the cross geochemical and extended exploration survey in Tsogttsetsii area. Cu mineralization in Tsogttsetsii area is porphyry Cu type related with alkali granite intruded in Late Carboniferous to Early Permian. In the concentrated occurring to malachite appears extensively prophylitic alteration zone having a chlorite and epidote. As results of the survey, Cu contents of potable XRF and of chemical composition for altered rocks ranges 1.08 to 18.3% in the 30 points and 1.08 to 32.9% in the 13 points, respectively. Ore minerals identified in XRD analysis and polarizing microscope that samples of copper oxides were composed mainly of malachite, azurite, permingeatite and cuprite and the other minerals are pyrite, chalcopyrite, pyrargyrite, dickite, calcite, chlorite and epidote. Mineralization can be considered occurring to selectively some granite of the surrounding aplite and faults in the only upper part coming up the hydrothermal solution of the remaining residual magma after the aplite intrusion.

• Applied Chemistry for Engineering
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• v.21 no.3
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• pp.328-332
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• 2010

In this study, porous ZnO sphere and Cu-ZnO composite were synthesized by coprecipitation method in diethylene glycol solvent. The physicochemical properties of as-prepared composite materials were characterized by SEM, XRD, $N_2$-sorption and $H_2$-TPR. A series of porous Cu-ZnO with different Cu contents (0, 6.6, 21.3, 36.4, 54.6, 77.8 wt%) was investigated for CO oxidation activity in a fixed bed reactor system. With increasing Cu content in Cu-ZnO the surface area and micropore volume of Cu-ZnO are decreased and Cu (36.4 wt%)-ZnO shows higher activity for CO oxidation compared to the others.

• Economic and Environmental Geology
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• v.46 no.2
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• pp.165-178
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• 2013

This study is for the genetic differences of two closed asbestos mines from Jeongjeon and Ocheon areas in Boryoung, Chungnam. They are mined asbestos for past several decades. Host rocks are serpentinites for Jeongjeon mine and dolomites for Ocheon mine. Asbestos samples and their host rocks are collected from the field trips and examined with microscopes and FESEM, and analysed with XRD and EDX to confirm for the type and/or compositions of the minerals. The asbestos occur as layers, cracks and fractures assummed as a pathway of the hydrothermal water, but show different characteristics. The serpentinites from the Jeongjeon mine contain chrysotile, tremolite and actinolite asbestos. Non-asbestos minerals including tremolite and actinolite were also found. The chrysotiles occur as a cross fiber or slip fiber at veins and along cracks of several mm to cm thickness. Tremolite and actinolite asbestos occur along cracks and fractures of several cm to ten cm thickness. It suggests that the asbestos from Jeongjeon area were formed by the reactions between serpentinite and hydrothermal water. The dolomites of the Ocheon mine only contain tremolite and actinolite asbestos. The asbestos occur along layers, cracks and fractures, suggestive of asbestos from Ocheon area formed by the reactions between dolomite and hydrothermal waters influxed along layers, cracks and fractures. Overall results suggest that two asbestos mines showing different host rocks are located in a Boryoung area. They show a different type of asbestos minerals, reflecting variety of petrogeneses.

• Journal of the Korean Geographical Society
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• v.44 no.4
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• pp.447-462
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• 2009

Kohyun River basin is located at southern parts of Taebaek Mountains and most of river basins consists of sedimentary rock. The aims of this study are to investigate the distribution characteristics and processes of fluvial terraces at Kohyun River, using scientific methods such as classification of fluvial landforms, analysis of geomorphological deposits, XRD and OSL age dating. In Kohyun River basin are three levels terraces from T1 to T3. Fluvial terraces are assumed to be erosional terraces according to deposited situation of alurium and existences of bedrock riverbed. From the result of OSL age dating, formation age of fluvial terrace 1(T1) is calculated about 37,000 yr.B.P.(MIS 3), and fluvial terrace 2(T2) is calculated about 113,000 yr.B.P.(MIS 5). Therefore, fluvial terraces at Kohyun River are assumed to be formed at warmer period in the glacial stages or cooler period in the interglacial stages. The incision rate of fluvial terrace 1 at Kohyun River is calculated to be 0.054m/ka, and the incision rate of fluvial terrace 2 is calculated to be 0.115m/ka. This results suggest to lower incision rate than other rivers in Korea because of low uplift rates and little discharge.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.

• Clean Technology
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• v.23 no.2
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• pp.196-204
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• 2017

CdZnS/ZnO composite was prepared through low-temperature precipitation and drying method. The property of CdZnS/ZnO as a recyclable photocatalyst for the degradation of rhodamine B (RhB) under visible light irradiation was examined. The sample was characterized by XRD, FE-SEM, XPS, UV-vis DRS and photoluminescence techniques before and after repeated reaction to investigate the change of properties during the photocatalytic reaction. During repeated reaction, the CdZnS/ZnO showed an improved photocatalytic activity and recycle stability. Among two feasible reaction pathways for photocatalytic degradation of RhB, the cleavage of conjugated chromophore was found to predominate over N-dealkylation of chromophore skeleton in the present work. The results indicate that the CdZnS/ZnO, prepared by a simple precipitation method, can be used as a visible-light driven photocatalyst with enhanced cycle stability and activity.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.