• Applied Chemistry for Engineering
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• v.7 no.5
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• pp.925-937
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• 1996

Three types of mordenites treated by steaming($SM_{6.5}$), HF solution for $SM_{6.5}(FM_a)$ and HF solutlon+steaming for $SM_{6.5}(FM_b)$ were prepared and used as cracking catalysts of vacuum gas oil. These samples were analysed by XRF and XPS for average and surface Si/Al atomic ratio, XRD for unit cell constants, nitrogen adsorption/desorption for porosity, pyridine-IR for acidic properties. In comparison with three type samples, $SM_{6.5}$ had a lot of acid amount and showed micropore volume mostly(>85% to total volume). Dealuminated $FM_a$, compared with $SM_{6.5}$, was decreased a little in acid amount and improved for porosity. Also, $FM_b$ was decreased further in acid amount and developed in mesopore dramatically. The catalytic activity and the yield of gasoline, kerosine+diesel and branched aromatic over the modified mordenites which have developed mesopore were improved. This is due to limited access of diffusion of large molecules within pore of the modified mordenites.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.353-360
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• 2005

Surface treatment play an important role in nucleating calcium phosphate deposition on surgical Ti implant. Therefore, the purpose of this study is to examine whether the precipitation of apatite on cp-Ti and Ti alloys are affected by surface modification in HCl and $H_2O_2$ solution. Specimens were then chemically treated with a solution containing 0.1 M HCl and 8.8M $H_2O_2$ at $80^{\circ}C$ for 30 mins, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface was examined with XRD, SEM, EDX ana XPS. Also, pure Ti, Ti-6Al-4V and Ti-6Al-7Nb alloy specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. All specimens chemically treated with HCl and $H_2O_2$ solution have the ability to form a apatite layer in the HBSS which has inorganic ion composition similar to human blood plasma. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $38.57\;{\mu}m,\;62.27\;{\mu}m\;and\;45.64\;{\mu}m$ in the cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloy specimens with the chemical treatment respectively, and $52.20\;{\mu}m,\;75.62\;{\mu}m\;and\;66.56\;{\mu}m$ in the commercial specimens of cp-Ti, Ti-6Al-4V and Ti-6Al-7Nb without any treatment respectively. The results of this evaluation indicate that the chemically treated cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloys have better bioactivity and biocompatibility compared to the other metals tested.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Polymer(Korea)
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• v.34 no.6
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• pp.540-546
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• 2010

In this manuscript, in order to reduce methanol permeability and, at the same time, to increase proton conductivity THS-PSA containing silica compound, responsible for methanol permeability reduction, and sulfonic acid, responsible for proton conductivity enhancement, was applied onto PVA/PSSA-MA membranes. And in order to improve durability, the resulting membranes, PVA/PSSAMA/THS-PSA, were exposed to 500ppm F2 gas at varying reaction times. The surface-fluorinated membranes were characterized through the measurement of contact angles, thermo-gravimetric analysis, and X-ray photoelectron spectroscopy to observe the physico-chemical changes. For the evaluation of the electro-chemical changes in the resulting membranes, its water contents, ion exchange capacity, proton conductivity, and methanol permeability were measured and then compared with the commercial membrane, Nafion 115. Finally, the membran electrode assembly(MEA) was prepared and the cell voltage against the current density was measured. As fluorination time increased, the contents of F2 increased up to maximum 4.3% and to depth of 50 nm. At 60 min of fluorination, the proton conductivity was 0.036 S/cm, larger than Nafion 115 at 0.024 S/cm, and the methanol permeability was $9.26E-08cm^2/s$, less than Nafion 115 at $1.17E-06cm^2/s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.41-41
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• 2008

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

• Journal of the Korea Concrete Institute
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• v.26 no.4
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• pp.421-428
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• 2014

This paper describes the experimental results of insulated concrete sandwich wall panels (CSWP) with corrugated glass fiber-reinforced polymer (GFRP) shear connectors under in-plane shear loading. Corrugated GFRP shear connectors were used to improve the thermal property of insulated CSWP and to achieve composite action between the interior and exterior concrete wall panels. Test specimens were consist of three concrete panels with two insulation layers between concrete panels and middle concrete panels was loaded in the direction of gravity. To evaluate the effects of insulation types (extruded polystyrene, XPSS and expanded polystyrene, EPS), shear connector pitch (300 and 400 mm) and width (10 and 15 mm) on in-plane shear behavior of insulted CSWP, failure mode and shear flow-average relative slip relationship of specimens were investigated. Test results indicate that the bond stress between concrete panel and insulation is considerable initially. Especially in case of insulated CSWP without shear connector, initial stiffness of CSWP with XPSS is superior to that of CSWP with EPS. The shear connector's contribution to in-plane shear performance of insulated CSWP depends on the type of insulation.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.196-199
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• 2007

The chemical states of oxygen on the surfaces of $Pr_{1-x}Sr_{x}CoO_{3}$ (x=0.5 and 0.7) oxide systems were investigated by X-ray photoelectron spectroscopy. Merged oxygen peaks of $Pr_{1-x}Sr_{x}CoO_{3}$ (x=0.5 and 0.7) oxides could be divided as five sub-peaks. These five sub-peaks could be defined as lattice oxygen ($O_{L}$). chemisorbed oxygen peaks ($O_{C}$) and hydroxyl condition oxygen peak ($O_{H}$). In case of the $Pr_{0.5}Sr_{0.5}CoO_{3}$ and $Pr_{0.3}Sr_{0.7}CoO_{3}$, the binding energy (BE) of oxygen lattice were located at same BE. However, the BE of chemisorbed oxygen peaks including oxygen vacancy shows different BE. Especially, it was found that BE of chemisorbed oxygen peaks was increased when more Sr were substituted. Comparing atomic percentages of oxygens of $Pr_{0.5}Sr_{0.5}CoO_{3}$ and $Pr_{0.3}Sr_{0.7}CoO_{3}$, the ratio of $Pr_{0.3}Sr_{0.7}CoO_{3}$ was higher than that of $Pr_{0.5}Sr_{0.5}CoO_{3}$. It showed more chemically adsorbed site including oxygen vacancies were existed in $Pr_{0.3}Sr_{0.7}CoO_{3}$.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.86-91
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• 2004

Transiton-metal gallides attract wide interest as a candidate for high-temperature structural materials. In a wide composition range, in which it was known that Co-Ga alloy have CsCl (B2) crystallographic structure, a systematic study on the correlation between physical properties and electronic structures of Co-gallides was performed. $Co_{l-x}Ga$ $_{x}$ alloys ($0.35\leq$x$\leq0.55$) were prepared by arc-melting method and were annealed at $1000 ^{\circ}C$ for 48hour to increase the homogeneity. In this composition range all the prepared alloys have the CsCl (B2) structure. The chemical states and the electronic structure were studied by using x-ray photoemission spectroscopy (XPS), and x-ray absorption near-edge structure (XANES), and exhibit different physical properties depending on the composition. During the annealing, a significant oxidation has happened and all the oxygen atoms are incorporated with the Ga atoms to form a $Ga_2O_3$ phase. In a view point of electronic structure, the $Co_{l-x}Ga$ $_{x}$ alloys were formed by the Ga(p) - Co(d) hybridization.