• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.132-136
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• 2009

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

• Nano
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• v.13 no.10
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• pp.1850117.1-1850117.11
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• 2018

Sulfated $TiO_2$ nanoparticles were successfully immobilized on zeolite through improving hydrolysis-deposition method. Microstructure, crystallization, surface state and surface area of composite catalysts were characterized by SEM, XRD, FTIR spectra, XPS and BET and the photocatalytic activity was evaluated by degradation of methyl orange under UV irradiation. We optimized these factors ($SO^{2-}_4$ ions, calcination temperature and loading amount of sulfated $TiO_2$) on photocatalytic activity and crystallization of composite photocatalysts. The results indicated that the $SO^{2-}_4$ ions are successfully immobilized on the surface of $TiO_2$, and sulfated $TiO_2$/zeolite show the highest photocatalytic activity for methyl orange at the $[SO^{2-}_4 ]/[Ti^{4+}]$ molar rate of 1:1, calcination temperature of $600^{\circ}C$ for 2 h, and sulfated $TiO_2$ loading amount of 40%, respectively.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.44-47
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• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2742-2746
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• 2023

The corrosion behavior of copper immersed in dilute oxychloride solution (100 mM) was studied through surface investigation and in-situ monitoring of open-circuit potential. The copper corrosion was initiated with copper dissolution into a form of CuCl^-₂, resulting in mass decrease within the first 40 h of immersion. This was followed by a hydrolysis reaction initiated by the CuCl^-₂ at the copper surface, after which oxide products were formed and deposited on the surface, resulting in a mass increase. The formation of nucleation sites for copper oxide and its lateral extension during the corrosion process were examined using focused ion beam (FIB)-scanning electron microscopy (SEM). The presence of metastable compounds such as atacamite (CuCl₂·3Cu(OH)₂) on the corroded copper surface was revealed by X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM)-energy dispersive spectrometry (EDS) analysis.

• Applied Chemistry for Engineering
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• v.29 no.3
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• pp.298-302
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• 2018

Photocatalytic properties of nitrogen doped titanium dioxide were investigated. Photocatalytic degradation of methylene blue under UV and visible light was carried out to characterize N-doped $TiO_2$. The result of XPS indicated that nitrogen atoms substitute for oxygen sites within the crystal structure of $TiO_2$. In the UV-Vis DRS spectra, N-doped amorphous $TiO_2$ absorbed UV light with little absorption of visible light, while the absorption of visible light of amorphous/anatase $TiO_2$ remarkably increased. Methylene blue photocatalytic degradation appeared by the irradiation of UV or visible light onto the N-doped anatase phase of $TiO_2$. However, the degradation rate of visible light was lower than that of UV light. The photocatalytic degradation rate of the amorphous/anatase $TiO_2$ sample was higher than that of the anatase $TiO_2$. These results indicate that the high surface area of amorphous/anatase $TiO_2$ sample, which was about three times larger than those of the anatase $TiO_2$ sample, may be related to small particles of N-doped anatase $TiO_2$.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.37-42
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• 2018

In order to increase the compatibility of polypropylene (PP) and kenaf fiber (KF) felt, PP/KF and PP/KF/polyurethane (PU) felt composites were prepared by treating KF with three kinds of silane coupling agents. The concentration of silane coupling agents was fixed at 1 wt%. The chemical reaction between KF and silane coupling agents was confirmed by the existence of Si-O-Si and Si-O-C functional group bands appeared on FT-IR and X-ray photoelectron spectra (XPS). Thermal properties of PP/KF composites were investigated by DSC and TGA, and the thermal stability of PP/KF composites with treated KF increased. Based on tensile, flexural and impact properties of PP/KF and PP/KF/PU composites, 1-2 wt% of (3-aminopropyl)triethoxysilane (APS) contents were the optimum formulation as a compatibilizer. The tensile and flexural strength of the felt composites treated with the silane coupling agents were improved. This is mainly due to the improvement in the compatibility between PP and KF, which was confirmed by SEM images of the fractured surfaces after tension tests.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.275-281
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• 2017

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.