• 제목/요약/키워드: X-ray photoemission spectroscopy

검색결과 74건 처리시간 0.033초

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

  • Sim, Hana;Lee, Jeongmin;Cho, Seongjae;Cho, Eou-Sik;Kwon, Sang Jik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권2호
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    • pp.267-275
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    • 2015
  • In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

n-GaN/vanadium-based Ohmic 접촉 형성 (Formation of Vanadium-based Ohmic Contacts to n-GaN)

  • 송준오;임동석;김상호;성태연
    • 한국재료학회지
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    • 제13권9호
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    • pp.567-571
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    • 2003
  • We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

Growth, Structure, and Stability of Ag on Ordered ZrO2(111) Films

  • Han, Yong;Zhu, Junfa;Kim, Ki-jeong;Kim, Bongsoo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.204.2-204.2
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    • 2014
  • Among various metal oxides, ZrO2 is of particular interests and has received widespread attention thanks to its ideal mechanical and chemical stability. As a cheap metal, Ag nanoparticles are also widely used as catalysts in ethylene epoxidation and methanol oxidation. However, the nature of Ag-ZrO2 interfaces is still unknown. In this work, the growth, interfacial interaction and thermal stability of Ag nanoparticles on ZrO2(111) film surfaces were studied by low-energy electron diffraction (LEED), synchrotron radiation photoemission spectroscopy (SRPES), and X-ray photoelectron spectroscopy (XPS). The ZrO2(111) films were epitaxially grown on Pt(111). Three-dimensional (3D) growth model of Ag on the ZrO2(111) surface at 300 K was observed with a density of ${\sim}2.0{\times}1012particles/cm2$. The binding energy of Ag 3d shifts to low BE from very low to high Ag coverages by 0.5 eV. The Auger parameters shows the primary contribution to the Ag core level BE shift is final state effect, indicating a very weak interaction between Ag clusters and ZrO2(111) film. Thermal stability experiments demonstrate that Ag particles underwent serious sintering before they desorb from the zirconia film surface. In addition, large Ag particles have stronger ability of inhibiting sintering.

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FCVA 방법으로 증착된 DLC 박막의 열처리에 따른 구조적 물성 분석 (Effects of Thermal Treatment on Structural Properties of DLC Films Deposited by FCVA Method)

  • 김영도;장석모;박창균;엄현석;박진석
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권8호
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    • pp.325-329
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    • 2003
  • Effects of thermal treatment on the structural properties of diamond-like carbon (DU) films were examined. The DLC films were deposited by using a modified filtered cathodic vacuum arc (FCVA) deposition system and by varying the negative substrate bias voltage, deposition time, and nitrogen flow rate. Thermal treatment on DLC films was performed using a rapid thermal annealing (RTA) process at $600^{\circ}C$ for 2min. Raman spectroscopy, x-ray photoemission spectroscopy (XPS), atomic force microscope (AFM), and surface profiler were used to characterize the I$_{D}$I$_{G}$ intensity ratio, sp$^3$ hybrid carbon fraction, internal stress, and surface roughness. It was found for all the deposited DLC films that the RTA-treatment results in the release of internal compressive stress, while at the same time it leds to the decrease of sp$^3$ fraction and the increase of I$_{D}$I$_{G}$ intensity ratio. It was also suggested that the thermal treatment effect on the structural property of DLC films strongly depends on the diamond-like nature (i.e., sp$^3$ fraction) of as-deposited film.ed film.

X-선을 이용한 $Co_{1-x}Ga_x$ 합금계의 화학구조와 전자구조 (Chemical and Electronic structures of $Co_{1-x}Ga_x$ alloys by X-ray Analyses)

  • 유권국;이주열;지현배;이연승
    • 한국진공학회지
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    • 제13권2호
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    • pp.86-91
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    • 2004
  • 전이금속 갈라이드는 고온 응용성이 높은 물질로 관심을 모으고 있다. CsCl구조를 갖는 것으로 알려진 넓은 조성 범위에서 전이금속 갈라이드에 대해 물리적 특성과 전자구조의 상호관계에 대해 체계적인 연구를 하였다. $Co_{l-x}Ga$ $_{x}$ 합금($0.35\leq$x$\leq0.55$)을 arc-melting 방법으로 제작하였으며, 합금 제작 후 시료의 균질성을 높이기 위해 $1000 ^{\circ}C$에서 48시간동안 열처리하였다. 결정 구조를 알아보기 위해 x-ray diffraction을 측정한 결과, 이 조성 범위 안에서 모두 CsCl(B2)구조를 갖는 것으로 밝혀졌다. 화학적 상태와 전자 구조를 알아보기 위해서 x-선 광전자 분광, 그리고 x-선 흡수끝머리 부근 미세구조 (XANES)를 측정하였으며, 조성에 따라 서로 다른 물리적 특성을 보였다. 합금제작 과정에서 시료의 산화가 이루어졌으며 포함된 산소는 Ga과 결합하여 $Ga_2O_3$상을 이루었다. 전자 구조적으로 Co의 d 전자와 Ga의 p 전자사이의 p-d hybridization에 의해 합금이 형성되었다.

Reproducible Resistance Switching and Physical Characteristics of TiOx films with Oxidation Temperature and Time

  • Kim, Jong-Gi;Na, Hee-Do;Sohn, Hyun-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.171-171
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    • 2010
  • In this work, we investigated the effect of the oxidation temperature on the unipolar and bipolar resistance switching behaviors of the oxidized TiO-x films. TiOx films on Pt electrodes were fabricated by the oxidation of Ti films at $550^{\circ}C$ for 1 to 3 hours. The unipolar and bipolar resistance switching properties were investigated with the oxidation temperature and time. Also, the crystal structure and the physical properties such as chemical bonding states of TiOx layers were characterized in addition to the resistance switching characteristics. The resistance switching behaviors of TiOx films oxidized at above $450^{\circ}C$ and below $650^{\circ}C$ was shown. So, we investigated that the resistance switching behaviors of TiOx films oxidized at $550^{\circ}C$ with the oxidation time from 1 to 3 hour. The memory windows of unipolar switching in the oxidized TiOx films were reduced with increasing the oxidation time, but those of the bipolar switching were slightly enlarged. The enlargement of rutile TiO2 peak with increasing the oxidation time and temperature was studied by X-ray diffraction. An increase of non-lattice oxygen and Ti3+ in the TiOx films with the oxidation times was investigated by X-ray photoemission spectroscopy. It was expected that the uipolar and bipolar resistive switching of the oxidized TiOx film was strongly related with the migration of non-lattice oxygen anions and schottky barrier height, respectively.

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Photoemission study on the reactivity of organic molecules on chemically modified TiO2(001) surfaces

  • 공자현;박상민;황한나;황찬국;김유권
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.87-87
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    • 2010
  • Adsorption and subsequent catalytic reactions of ethanol and acetaldehyde on chemically modified rutile TiO2(001) surfaces are probed by x-ray photoemission spectroscopy (XPS) using synchrotron radiation. TiO2 is a well-known photocatalyst for various catalytic reactions including oxidation of organic molecules. In this respect, the surface atomic structure has been found to play a vital role in determining the catalytic reactivity and selectivity of TiO2. In this study, we employ an atomically well-ordered reduced TiO2(001) surface which is prepared in a UHV chamber by repeated Ar+-sputtering and annealing (900 K) cycles. We systematically modify the surface by treating the surface with H2O or O2 at room temperature (RT). The catalytic reactivity of the surface-modified TiO2(001) is evaluated by dosing ethanol/acetaldehyde onto the surface at RT and by subsequent annealing to higher temperatures (400~600 K). XPS spectra of C 1s core level are intensively used to probe any change in the oxidation state of carbon atoms. We find that the reactivity as well as the saturation coverage are significantly affected by the RT-treatment of the TiO2 surface with H2O or O2. For both reactant molecules (ethanol/acetaldehyde), oxidation reactions are found to be enhanced on the O2-treated surface compared with the reduced or H2O-treated surfaces. Possibly reaction pathways are discussed based on the observed XPS spectra.

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TiO2 (001)면에서 Ti 결함의 확산과 산화: 결정면에 대한 의존성 (Diffusion and Oxidation of Ti3+ Interstitials on a Reduced TiO2 (001) Surface: A Crystal-face Dependency)

  • 김유권
    • 한국진공학회지
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    • 제21권5호
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    • pp.242-248
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    • 2012
  • 방사광 가속기에서 얻은 x-선을 이용하여 초고진공에서 열처리를 통하여 얻어진 $TiO_2$ (001) 단결정 표면의 원자가 전자대에 대한 광전자 분광연구를 수행하였다. 이 연구를 통하여 특히 페르미 준위 0.9 eV 근처에 있는 결함에 기인한 전자 상태의 변화로 부터 $Ti^{3+}$ 결함의 산화 또는 열확산 과정에 대한 반응 속도론적 특성을 연구하였다. 본 연구의 결과는 (001)면에서의 $Ti^{3+}$ 결함의 열역학적 특성이 $TiO_2$ (110) 단결정면에서의 그것과 어떻게 다른지를 규명하는데 큰 의미가 있다. 연구 결과, (001)과 (110) 결정면에서의 $Ti^{3+}$ 결함의 거동은 산화 반응성과 결정 내에서의 열적 확산 특성에서 매우 유사하다는 것을 알게 되었다. 이와 같은 결과를 얻게 된 주된 이유 중의 하나는 관여하는 $Ti^{3+}$ 결함이 주로 표면 근처에 분포되어 있다는데서 찾을 수 있다.

양극산화와 열수처리한 니오비움 금속의 표면특성 (Surface Characterization of Anodized and Hydrothermal Treated Niobium Metal)

  • 원대희;김영순;윤동주;이민호;배태성
    • 한국재료학회지
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    • 제15권2호
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    • pp.134-138
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    • 2005
  • This study was performed to investigate the surface properties of electrochemically oxidized pure niobium by anodic oxide and hydrothermal treatment technique. Niobium specimens of $10mm\times10mm\times1.0mm$ in dimension were polished sequentially from $\#600,\;\#800,\;\#1000$ emery paper. The surface of pure niobium sperimens was anodized in an electrolytic solution that was dissolved calcium and phosphate in water. The electrolytic voltage was set in the range of 250 V and the current density was $10mA/cm^2$. The specimen was hydrothermal treated in high-pressure steam at $300^{\circ}C$ for 2 hours using an autoclave. And all specimens were immersed in the in the Hanks' solution nth pH 7.4 at $37^{\circ}C$ for 30 days. The surface of specimen was characterized by surface roughness, scanning electron microscope(SEM), energy dispersion X-ray analysis(EDX), X-ray photoemission spectroscopy(XPS) test. The value of surface roughness was the highest in the anodized sample and $0.41{\pm}0.04\;{\mu}m$. The results of the SEM observation show that oxide layers of the multi porosity in the anodized sample were piled up on another, and hydroxyapatite crystal was precipitate from the surface of the hydrothermal treated sample. In the XPS analysis, O, Nb, C peak and small amounts of N peak were found in the polished specimens while Ca and P peak in addition to O, Nb, C and peak were observed in the hydrothermal treated sample.

Binary Compound Formation upon Copper Dissolution: STM and SXPS Results

  • Hai, N.T.M.;Huemann, S.;Hunger, R.;Jaegermann, W.;Broekmann, P.;Wandelt, K.
    • Corrosion Science and Technology
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    • 제6권4호
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    • pp.198-205
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    • 2007
  • The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.