• 한국재료학회지
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• 제20권11호
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• 한국자원식물학회지
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• 제25권1호
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• pp.142-151
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• 2012

식물유전자원의 소재를 확대하고자 동진 1호 벼의 건조 종자에 감마선($^{60}Co$, 300 Gy)을 조사하여 선발한 조기출수 계통의 유전적 변이성을 분석하였다. 선발한 조기출수 계통의 $M_7$(2010년)과 $M_8$(2011년) 세대에서 평균 출수기는 대조품종인 동진 1호(중만생종) 보다 각각 11일(${\gamma}$-2 계통), 10일(${\gamma}$-5 계통), 6일(${\gamma}$-1 계통), 5일(${\gamma}$-3 계통), 4일(${\gamma}$-4 계통)이 빠르게 나타났다. ISSR 분석 결과, 선발계통의 유전적 다형성은 ${\gamma}$-2 계통 5.9%, ${\gamma}$-1 계통 7.5%, ${\gamma}$-4 계통 15.1%, ${\gamma}$-3 계통 15.3%, X-1 계통 19.4%, ${\gamma}$-5 계통 23.4%로 대조품종의 4.3% 보다 높게 나타나 방사선 조사로 DNA 수준에서 변이가 증가되었음을 확인하였다. 엽록체 DNA(rps16-trnK 영역) 분석 결과, 염기 길이는 대조 품종과 같은 664 bp인 반면, 총 5개 염기서열 영역에서 치환 변이가 발생하였고 그 중 6 bp 및 587 bp 영역의 변이는 선발 계통에서만 나타났다.

• 한국작물학회지
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• 제20권
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• pp.63-68
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• 1975

(1) 진흥에 방사선을 처리하여 얻은 고단백돌연변이계통(1974년에 M$_4$세대, 종자는 M$_{5}$)들에 대해 3개지역에서 특성조사, 단위면적당단백질수량, 종자의 수량조사등을 실시하였고, 한편 (2) 호광에서 얻은 고단백이면서 단간, 조열인 변이계통 398(1974년에 M$_{10}$ , 종자는 M$_{11}$)에 대해 변이형질들을 지배하는 인자와 이의 다발성(또는 연관)여하를 구명하기 위해 이를 모품종과 교잡하여 F$_1$mF$_2$세대에 있어서 변이형질들의 발현 및 분리를 조사하였다. 1. 진흥유래의 고단백변이계통들의 단배질함량은 년차 및 지역간에 변이는 있으나 모품종에 비해 모두 높고 종자수량은 모품종과 비슷하거나 증가되었다. 2. 이들의 열기는 5-10일 단축되었고, 간장은 1계통을 제외하고는 단간화되었고 엽 및 수수도열병의 저항성은 비교적 강한 편이었다. 2. 이들의 숙기는 5-10일 단축되었고, 간장은 1계통을 제외하고는 단간화되었고, 엽 및 수수도열병의 저항성은 비교적 강한 편이었다. 3. 고단백변이계통 398과 모품종 호광과의 F$_1$에서 간장, 숙기는 양친의 중간형으로 나타났다. F$_2$에서 단간, 조숙이면서 저단백인 것이 분리되어 고단백인자와 기타 변이형질과는 독립적으로 유전되는ㄱ서 같으나 F$_2$세대와 F$_3$종자가 비정상적 환경하에서 생육 및 성숙했기 때문에 확실치 않고, 정확한 것은 비상환경에서 자란 F$_2$세대에서 밝혀질 것이다.

• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.49-55
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• 2016

차세대 반도체의 초미세 Cu 배선 확산방지층 적용을 위해 원자층증착법(atomic layer deposition, ALD) 공정을 이용하여 증착한 RuAlO 확산방지층과 Cu 박막 계면의 계면접착에너지를 정량적으로 측정하였고, 환경 신뢰성 평가를 수행하였다. 접합 직후 4점굽힘시험으로 평가된 계면접착에너지는 약 $7.60J/m^2$으로 측정되었다. $85^{\circ}C$/85% 상대습도의 고온고습조건에서 500시간이 지난 후 측정된 계면접착에너지는 $5.65J/m^2$로 감소하였으나, $200^{\circ}C$에서 500시간 동안 후속 열처리한 후에는 $24.05J/m^2$으로 계면접착에너지가 크게 증가한 것으로 평가되었다. 4점굽힘시험 후 박리된 계면은 접합 직후와 고온고습조건의 시편의 경우 RuAlO/$SiO_2$ 계면이었고, 500시간 후속 열처리 조건에서는 Cu/RuAlO 계면인 것으로 확인되었다. X-선 광전자 분광법 분석 결과, 고온고습조건에서는 흡습으로 인하여 강한 Al-O-Si 계면 결합이 부분적으로 분리되어 계면접착에너지가 약간 낮아진 반면, 적절한 후속 열처리 조건에서는 효과적인 산소의 계면 유입으로 인하여 강한 Al-O-Si 결합이 크게 증가하여 계면접착에너지도 크게 증가한 것으로 판단된다. 따라서, ALD Ru 확산방지층에 비해 ALD RuAlO 확산방지층은 동시에 Cu 씨앗층 역할을 하면서도 전기적 및 기계적 신뢰성이 우수할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.441-442
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• 2012

SnNb2O6 nanoplates were prepared by a solvothermal synthesis with water and ethanol mixed solvent. For improvement of their properties, as-prepared SnNb2O6 nanoplates also were calcined. The prepared powder was characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electron microscope (TEM), UV-vis spectroscopy, Raman spectrometer, Brunauer-Emmett-Teller (BET). The calcined nanoplates have a smaller surface area than the as-prepared nanoplates have. Nevertheless, in the case of the optical absorption properties, the calcined nanoplates could absorb more photon energy, due to their smaller band gaps. The Raman analysis revealed that the Nb-O bond length in the calcined nanoplates was longer than that in the as-prepared nanoplate. The higher optical absorption capability of the calcined nanoplates was attributed to the local structure variation within them. Furthermore the high crystallinity of the calcined nanoplates is effective in improving the generation of charge carriers. So, It was found that the calcined nanoplates exhibited superior photocatalytic activity for the evolution of H2 from an aqueous methanol solution than the as-prepared nanoplates under UV and visible irradiation. Therefore, the enhanced photocatalytic activity of the calcined nanoplate powder for H2 evolution was mainly attributed to its high crystallinity and improved optical absorption property resulting from the variation of the crystal structure.

• Corrosion Science and Technology
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• 제12권2호
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• pp.102-112
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• 2013

A very high-temperature gas reactor (VHTR) is one of the next generation nuclear reactors owing to its safety, high energy efficiency, and proliferation-resistance. Heat is transferred from the primary helium loop to the secondary helium loop through an intermediate heat exchanger (IHX). Under VHTR environment Alloy 617 is being considered a candidate Ni-based superalloy for the IHX of a VHTR, owing to its good creep resistance, phase stability and corrosion resistance at high temperature. In this study, high-temperature corrosion tests were carried out at 850 - $950^{\circ}C$ in air and impure helium environments. Alloy 617 specimens showed a parabolic oxidation behavior for all temperatures and environments. The activation energy for oxidation was 154 kJ/mol in helium environment, and 261 kJ/mol in an air environment. The scanning electron microscope (SEM) and energy-dispersive x-ray spectroscopy (EDS) results revealed that there were a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbide after corrosion test. The thickness and depths of degraded layers also showed a parabolic relationship with the time. A corrosion rate of $950^{\circ}C$ in impure helium was higher than that in an air environment, caused by difference in the outer oxide morphology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).