• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.301-305
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• 2011

ABS/silicate composites with different clay types and compositions were prepared by in situ emulsion polymerization. The chemical structure of ABS was confirmed by the change of C-H stretching peak(near 3000 $cm^{-1}$) in fourier transform-infrared(FT-IR) spectrum. The thermal properties of the ABS/silicate composites were investigated by differential scanning calorimetry(DSC) and thermogravimetric analyzer(TGA). There was no distinct change in glass transition temperature of the ABS/silicate composites with different clay types. TGA curve indicates a dramatic increase in degradation temperature in case of ABS/20A composite with 3 wt% 20A. The silicate dispersion in the composites was measured by X-ray diffraction(XRD). The silicate dispersion in ABS/20A composites depended on the 20A composition. XRD results showed that the diffraction peak of the ABS/20A composite appeared when the content of 20A was higher than 5 wt%.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.406-410
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• 2000

Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.25-31
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• 1994

The magnetic properties of aluminum anodized film in which Co-Fe alloy electrodeposited are investigated with regard to the alloy composition of magnetic films. The electrodeposited Co-Fe particles are confirmed to be single phase Co-Fe alloys by X-ray diffractions. At 34 at% Co, the sample with small pore diameter(particle diameter $150\;{\AA}$) has a large magnetic energy product($B_{max}$) of about 1.44 MGOe due to the large saturation magnetization, the high coercive force and good squareness of the M-H curve. However, for the samples with particle diameter larger than $450\;{\AA}$, the bottom of each particle forms abnormal particle claaed branch-shaped unlike the sample of the particle diameter $150\;{\AA}$. In this case, the magnetic anisotropy energy was about zero at the compositions of 45 and 75 at% Co. Moreover, at the compositions from 50 to 70 at% Co, the anisotropy became negative value. This means that an easy axis of magnetization of the film is in plane in plane in spite of the perpendicular shape anisotropy of the particle. It was found that the bottom extremity of the particle contains FeC from the X-ray diffraction. Thus the effect of the bottom extremity, that is, an unusal magnetic property was removed by electrodepositing Cu at the bottom extremity of the particle. Itis clear that the magnetic properties of the ilms are influenced by he branch-shaped bottom extremity filled with FeC.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.434-444
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• 2022

Corrosion inhibitors based on Zn-Al hydrotalcites containing benzoate (ZnAlHB) with different molar ratios of Zn/Al were prepared with a co-precipitation process. Compositions and structures of the resulting hydrotalcites were studied with suitable spectroscopic methods such as inductively coupled plasma mass spectrometry (ICP-MS), ultraviolet-visible spectrophotometry (UV-Vis), scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and surface zeta potential measurements, respectively. Results of physico-chemical studies showed that crystallite sizes, compositions of products, and surface electrical properties were significantly changed when the molar ratio of Zn/Al was increased. The release of benzoate from hydrotalcites also differed slightly among samples. Anticorrosion abilities of hydrotalcites intercalated with benzoate at a concentration of 3 g/L on carbon steel were analyzed using electrochemical impedance spectroscopy (EIS), polarization curve, energy-dispersive X-ray spectroscopy (EDX), and SEM. Corrosion inhibition abilities of benzoate modified hydrotalcites in 0.1 M NaCl showed an upward trend with increasing Zn/Al ratio. The reason for the dependence of corrosion resistance on the Zn/Al ratio was discussed, including changes in the microstructure of hydrotalcites such as crystal size, density, uniformity, and formation of ZnO.

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.3
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• pp.156-162
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• 2021

Mg hydride has a relatively high hydrogen storage amount of 7.6wt%, and inexpensive due to abundant resources, but has high reaction temperature and long reaction time because of treble oxidation reactivity and upper activation energy. Their range of applications could be further extended if their hydrogenation kinetics and degradation behavior could be improved. Therefore, the effect of CaO has improved the hydrogenation kinetics and slowed down the degradation. This study focused on investigating whether to improve the hydrogenation kinetics by synthesizing Mg₂NiH_x-5wt% CaO composites. The Mg₂NiH_x-5wt% CaO composites have been synthesized by hydrogen induced mechanical alloying. The synthesized composites were characterized by performing X-ray diffraction, Scanning Electron Microscopy, Brunauer-Emmett-Teller, Thermogravimetric, and Sivert's type automatic pressure-composition-temperature analysis. Hydriding kinetics were performed using an automatic PCT measurement system and evaluated over the temperature range of 423 K, 523 K, and 623 K. As a result of calculating the hydrogen adsorption amount through the hydrogenation kinetics curve, it was calculated as about 0.42wt%, 0.91wt%, and 1.15wt%, the highest at 623 K and the lowest at 423 K.