• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.943-946
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• 2007

In-plane piezoelectric charge constant of Electro-Active paper (EAPap) was investigated based on direct and converse piezoelectric effects. EAPap samples were made with cellulose film with very thin gold electrode coated on both sides of the film. To characterize direct piezoelectricity of EAPap, induced charge was measured when mechanical stress was applied to EAPap. In-plane piezoelectric charge constant was extracted from the relation between induced charge and applied in-plane normal stress. To investigate converse piezoelectricity, induced in-plane strain was measured when electric field was applied to EAPap. Piezoelectric charge constant was also extracted from the relation of induced in-plane strain and applied electric field. Piezoelectric charge constants obtained from direct and converse piezoelectricity are 31 pC/N and 178 x 10-12m/V for 45 degree sample, respectively. Measured piezoelectric charge constants of EAPap provide promising potential as a piezoelectric material.

• International journal of steel structures
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• v.18 no.4
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• pp.1265-1283
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• 2018

This paper presents a four-variable first-order shear deformation theory considering in-plane rotation of functionally graded plates. In recent studies, a simple first-order shear deformation theory was developed and extended to functionally graded plates. It has only four variables, separating the deflection into bending and shear parts, while the conventional first-order shear deformation theory has five variables. However, this simple first-order shear deformation theory only provides good predictions for simply supported plates since it does not consider in-plane rotation varying through the thickness of the plates. The present theory also has four variables, but considers the variation of in-plane rotation such that it is able to correctly predict the responses of the plates with any boundary conditions. Analytical solutions are obtained for rectangular plates with various boundary conditions. Comparative studies demonstrate the effects of in-plane rotation and the accuracy of the present theory in predicting the responses of functionally graded plates.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.661-669
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• 1989

The defect structure in LiNbO3 single crystals grown by Czochralski method from the congruently melting composition were investigated. Chemical etching patterns were studied in x-plane, z-plane, and major cleavage plane, respectively, dislocation density was higher at the periphery of crystals than at the center because the thermal stress due to radial temperature gradient had a main effect on it, as compared with dislocations formed from the solid-liquid interface. Many dislocation lineages were arranged along several directions.

• Bulletin of the Korean Mathematical Society
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• v.47 no.1
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• pp.211-219
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• 2010

Let P be a Jacobian polynomial such as deg P = $deg_y$ P. Suppose the Jacobian polynomial P satisfies the intersection condition satisfying $dim_C$ C[x, y]/$P_y$> = deg P - 1, we can prove that the Keller map which has P as one of coordinate polynomial always has its inverse.

• Communications of the Korean Mathematical Society
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• v.9 no.2
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• pp.337-353
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• 1994

Let H be a Schrodinger operator in $L^2$(R) H =(equation omitted) ＋ V(x), with supp V ⊂ [-R, R]. A number $z_{0}$ / in the lower half-plane is called a resonance for H if for all $\phi$ with compact support 〈$\phi$, $(H - z)^{-l}$ $\phi$〉 has an analytic continuation from the upper half-plane to a part of the lower half-plane with a pole at z = $z_{0}$ . Thus a resonance is a sort of generalization of an eigenvalue. For Im k > 0, ($H - k^2$)$^{-1}$ is an integral operator with kernel, given by Green's function(omitted)

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.117-121
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• 2013

In this study we investigated magnetism and magnetostriction of B2-structured FeX (X = Al, Si, Ni, Ga, Ge, and Sn) using a first-principles method, in order to survey the possibility of developing a transition metal based magnetostriction material. The Full-potential Linearized Augmented Plane Wave method was employed for solving the Kohn-Sham equation within the generalized gradient approximation for exchange-correlation interaction between electrons. FeX alloys are stabilized in ferromagnetic states except for the FeSi and FeGe alloys. Magnetostrcition coefficients of FeX (X = Al, Ni, Ga, and Sn) were calculated to be -5, +6, -84, -522ppm, respectively. It is noteworthy that the magnetostriction coefficient (-522ppm) of FeSn is larger than that (+400ppm) of Gafenol.

• Journal of KIISE:Software and Applications
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• v.27 no.4
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• pp.432-440
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• 2000

In this study, a new algorithm for canceling MRI artifact due to translational motion in image plane is described. Unlike the conventional iterative phase retrieval algorithm, in which there is no guarantee for the convergence, a direct method for estimating the motion is presented. In previous approaches, the motions in the x(read out) direction and the y(phase encoding) direction are estimated simultaneously. However, the features of x and y directional motions are different from each other. By analyzing their features, each x and y directional motion is canceled by different algorithms in two steps. First, it is noticed that the x directional motion corresponds to a shift of the x directional spectrum of the MRI signal, and the non-zero area of the spectrum just corresponds to the projected area of the density function on the x-axis. So the motion is estimated by tracing the edges between non-zero area and zero area of the spectrum, and the x directional motion is canceled by shifting the spectrum in inverse direction. Next, the y directional motion is canceled by using a new constraint condition, with which the motion component and the true image component can be separated. This algorithm is shown to be effective by using a phantom image with simulated motion.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.43-46
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• 1997

High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.87-97
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• 1998

This paper describes an analysis of tunable characteristic for magnetically tunable E-plane type finline filter on a ferrite substrate. The proposed design is based on using of quarter wavelength transmission line for compensating the negative length transmission line of end K-inverters of E-plane type waveguide filters and the tunable characteristics of designed filters are analyzed. The analysis results of filter and inverter structure loaded with finline on a ferrite substrate are obtained using the edge based finite element method including higher order mode effects. The X-band experimental results for bilateral and unilateral finline magnetically tunable E-plane type waveguide filters agree well with the simulated data.

• Bulletin of the Korean Mathematical Society
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• v.58 no.3
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• pp.617-635
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• 2021

Let X be a smooth hypersurface X of degree d ≥ 4 in a projective space ℙⁿ⁺¹. We consider a projection of X from p ∈ ℙⁿ⁺¹ to a plane H ≅ ℙⁿ. This projection induces an extension of function fields ℂ(X)/ℂ(ℙⁿ). The point p is called a Galois point if the extension is Galois. In this paper, we will give necessary and sufficient conditions for X to have Galois points by using linear automorphisms.