• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.3
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• pp.439-446
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• 1997

A traditional notion of composites has been composed as a uniform dispersoid, but now it is proposed without regard to such rule with process development. Functionally Graded Material(FGM) consists of a new material design that is to make intentionally irregular dispersion state. In this study, thermal stress analysis of plasma spraying PSZ/NiCrAlY gradient material was conducted theoretically using a finite-element program. A formations of the model are direct bonding material(NFGM) and FGM with PSZ and NiCrAlY component element. The temperature conditions were $700^{\circ}C$ to 1100.deg. C assuming a cooling-down precess up to room temperature. Fracture damage mechanism was analyzed by the parameters of residual stress.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.8-12
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• 2016

A planar, light-weight, and low-cost notch filter structure is required for the KSTAR ECEI (Electron Cyclotron Emission Imaging) system to protect the mixer arrays from spurious plasma heating power. Without protection, this heating power can significantly degrade or damage the performance of the mixer array. To protect mixer arrays, a frequency selective surface (FSS) structure is the suitable choice as a notch filter to reject the spurious heating power. The FSS notch filter should be located between the lenses of the ECEI system. This paper presents a 170 GHz FSS notch filter for the KSTAR ECEI sensor application. The design of such an FSS notch filter is based on the single-sided square loop geometry, because that makes it relatively insensitive to the incident angle of incoming wave. The FSS notch filter exhibits high notch rejection with low pass-band insertion loss over a wide range of incident angles. This paper also reviews the simulated and measured results. The proposed FSS notch filter might be implemented in other millimeter-wave plasma devices.

• Food Science and Biotechnology
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• v.16 no.6
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• pp.1064-1068
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• 2007

We evaluated the effect of soybean dongchunghacho [SD, cultivated dongchunghacho fungus (Paecilomyces tenuipes) on soybeans] on dimethylhydrazine (DMH)-induced DNA damage and oxidative stress in male F344 rats. The animals were divided into 3 groups and fed a casein-based high-fat, low fiber diet without (DMH group) or with 13%(w/w) of soybean (DMH+S group), or SD (DMH+SD group). One week after beginning the diets, rats were treated weekly with DMH (30 mg/kg, s.c.) for 6 weeks; dietary treatments were continued for the entire experiment and endpoints measured at 9 weeks after the first DMH injection. SD supplementation reduced DMH-induced DNA damage in colon cells and reduced plasma lipid peroxidation. Thus, SD may have therapeutic potential for early-stage colon carcinogenesis.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• Nutrition Research and Practice
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• v.3 no.2
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• pp.114-121
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• 2009

The effect of diet supplemented with red beet (Beta vulgaris L.) leaf on antioxidant status of plasma and tissue was investigated in C57BL/6J mice. The mice were randomly divided into two groups after one-week acclimation, and fed a high fat (20%) and high cholesterol (1%) diet without (control group) or with 8% freeze-dried red beet leaf (RBL group) for 4 weeks. In RBL mice, lipid peroxidation determined as 2-thiobarbituric acid-reactive substances (TBARS value) was significantly reduced in the plasma and selected organs (liver, heart, and kidney). Levels of antioxidants (glutathione and $\beta$-carotene) and the activities of antioxidant enzyme (glutathione peroxidase) in plasma and liver were considerably increased, suggesting that antioxidant defenses were improved by RBL diet. Comet parameters such as tail DNA (%), tail extent moment, olive tail moment and tail length were significantly reduced by 25.1%, 49.4%, 35.4%, and 23.7%, respectively, in plasma lymphocyte DNA of RBL mice compared with control mice, and indicated the increased resistance of lymphocyte DNA to oxidative damage. In addition, the RBL diet controlled body weight together with a significant reduction of fat pad (retroperitoneal, epididymal, inguinal fat, and total fat). Therefore, the present study suggested that the supplementation of 8% red beet leaf in high fat high cholesterol diet could prevent lipid peroxidation and improve antioxidant defense system in the plasma and tissue of C57BL/6J mice.

• The Journal of Advanced Prosthodontics
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• v.12 no.2
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• pp.75-82
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• 2020

PURPOSE. The aim of this study was to investigate the shear bond strength of luting cements used with implant retained restorations on to titanium specimens after different surface treatments. MATERIALS AND METHODS. One hundred twenty disc shaped specimens were used. They were divided into three groups considering the surface treatments (no treatment, sandblasting, and oxygen plasma treatment). Water contact angle of specimens were determined. The specimens were further divided into four subgroups (n=10) according to applied cement types: polycarboxylate cement (Adhesor Carbofine-AC), temporary zinc oxide free cement (Temporary CementZOC), non eugenol provisional cement for implant retained prosthesis (Premier Implant Cement-PI), and non eugenol acrylic-urethane polymer based provisional cement for implant luting (Cem Implant Cement-CI). Shear bond strength values were evaluated. Two-way ANOVA test and Regression analysis were used to statistical analyze the results. RESULTS. Overall shear bond strength values of luting cements defined in sandblasting groups were considerably higher than other surfaces (P<.05). The cements can be ranked as AC > CI > PI > ZOC according to shear bond strength values for all surface treatment groups (P<.05). Water contact angles of surface treatments (control, sandblasting, and plasma treatment group) were 76.17° ± 3.99, 110.45° ± 1.41, and 73.80° ± 4.79, respectively. Regression analysis revealed that correlation between the contact angle of different surfaces and shear bond strength was not strong (P>.05). CONCLUSION. The retentive strength findings of all luting cements were higher in sandblasting and oxygen plasma groups than in control groups. Oxygen plasma treatment can improve the adhesion ability of titanium surfaces without any mechanical damage to titanium structure.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.12
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• pp.1171-1176
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• 2012

The selective patterning of a carbon nanotube (CNT) forest on a Si substrate has been performed using a femtosecond laser. The high shock wave generated by the femtosecond laser effectively removed the CNTs without damage to the Si substrate. This process has many advantages because it is performed without chemicals and can be easily applied to large-area patterning. The CNTs grown by plasma-enhanced chemical vapor deposition (PECVD) have a catalyst cap at the end of the nanotube owing to the tip-growth mode mechanism. For the application of an electron emission and biosensor probe, the catalyst cap is usually removed chemically, which damages the surface of the CNT wall. Precise control of the femtosecond laser power and focal position could solve this problem. Furthermore, selective CNT cutting using a femtosecond laser is also possible without any phase change in the CNTs, which is usually observed in the focused ion beam irradiation of CNTs.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.266-270
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• 2003

We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.