• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.9A
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• pp.1535-1541
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• 2001

TCP is the most widely-used transport layer protocol in current Internet, while ATM technology is used to increase the data communication speed at data link layer and network layer. In the TCP-over-ATM architecture, the most significant problems are (i) the partial packet discarding problem, and (ii) the TCP window timeout problem. Several approaches have been proposed to solve the partial packet discard problem and the timeout problem individually, but none of them considered the two problems together. In this paper, we propose an enhanced UBR+ scheme which supports fairness among the TCP connections using UBR+ scheme, and provides protection of damaged VC from the multiple packet losses in the same TCP sliding window. To analyze its performance, we simulate the proposed scheme using OPNET. The simulation results show that the proposed scheme supports fairness, and also increases the throughput by reducing the probability of multiple cell losses in the same TCP window.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.387-392
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• 2017

A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.203-208
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• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Journal of the Korean housing association
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• v.17 no.5
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• pp.47-54
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• 2006

This study aims to evaluate the sound insulation performance of Korean traditional paper(Hanji) windows as a material of environmental friendly building. Six types of traditional windows with 4 types of traditional window positions, were installed in l/2.5 scale model house. And then according to KS F 2235, comparative sound level differences between outdoor and indoor were measured. The main results are as follows; 1) TL(Transmission Loss) of Korean traditional paper windows, which cover one eighth of total balcony window, are ranged from 15 to 19 dB(A) in the living room and from 8 to 11 dB(A) in the balcony space. 2) TL of Korean traditional paper windows, which cover one fourth of total balcony window, are ranged from 10 to 19 dB(A) in the living room and from 8 to 10 dB(A) in the balcony space. 3) TL of Korean traditional windows with one side-one layer paper is ranged from 10 to 21 dB(A) and two side-one layer paper is 15 to 23 dB(A) and two side-two layer paper is 19 to 23 dB(A) respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.226-232
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• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.10
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• pp.515-529
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• 2017

EnergyPlus, which is widely used in various fields, provides Simple Window Model, a window model that can be used practically. However, the results of building load using the model are different from those of the standard model. The main cause of the deviation by Simple Window Model was analyzed to be due to the assumption that all windows were considered as single layer. The purpose of this study is to propose a window model that improves the cause of deviation by Simple Window Model and can be easily calculated from the algebraic relations. The proposed window model solved the heat balance equation algebraically by using seven window characteristic coefficients. The coefficient relationships consisted of the heat transmission coefficient and solar heat gain coefficient as input parameters make practical use and calculation possible. As a result of comparing the deviation between each window model by implementing the dynamic analysis method, the proposed window model showed that the deviation of the total heating/cooling energy consumption was reduced to 1/3 compared to Simple Window Model for one year. Although the maximum energy consumption did not show any significant improvement, the indoor temperature evaluation showed significantly reduced deviation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.4
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• pp.777-790
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• 2001

Theoretical analyses have been tried to design high power and stable operating SLD at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest absorption wavelength in optical fiber. The materials of active layer and SCH layer were chosen as conventional In1-xGaxAsyPl-y quaternary composition systems. From the transverse mode and the lateral mode analyses of waveguide, the optical power distributions and the optical confinement factor have been studied for single-mode high power operation. According to these analyses, it was calculated the composition and the thickness of SCH layer to obtain the maximum optical confinement factor. In order to obtain low values of the reflectivity, we used the window region and the lateral tilted angle between tile active region and window region. And the reflectivity of SLD was calculated with the gaussian beam approximation and mode analysis. From these researches, it was confirmed for several results to fabricate the efficient and stable SLD. In case of using $1.3\mum$, InGaAsP SCH layer, the layer thickness was obtained $0.08\mum$, to get the maximum optical confinement factor. Using $0.2\mum$, active layer thickness and $0.08\mum$, SCH layer thickness, the window region length is about $100\mum$ without An coating, $10\mum$ in 1% AR coating to obtain about 10-4 reflectivity. When the tilted angle is about $10~15^{\circ}$, the reflectivity is about 10-3. From these results, if the window region length and tilted angle were controlled appropriately in given device structure, it was confirmed that it is possible to fabricate the stable SLD without AR coating analytically.

• Journal of Broadcast Engineering
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• v.27 no.4
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• pp.538-547
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• 2022

Recently introduced image classification methods using Transformers show remarkable performance improvements over conventional neural network-based methods. In order to effectively consider regional features, research has been actively conducted on how to apply transformers by dividing image areas into multiple window areas, but learning of inter-window relationships is still insufficient. In this paper, to overcome this problem, we propose a transformer structure that can reflect the relationship between windows in learning. The proposed method computes the importance of each window region through compression and a fully connected layer based on self-attention operations for each window region. The calculated importance is scaled to each window area as a learned weight of the relationship between the window areas to re-calibrate the feature value. Experimental results show that the proposed method can effectively improve the performance of existing transformer-based methods.