• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.2 no.2
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• pp.3-10
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• 1991

The new structure method of GaAs microwave amplifiers using DC block function and impedance transforming property of DC block/transformer(non-symmetrical two - microstrip coupled line and interdigital three - microstrip coupled line), instead of chip capacitor, is presented. The newly structured microwave amplifier showed wideband characteristics(bandwidth, 3.5 GHz) and flat frequency response. Interdigital three - microstrip coupled line which is used for microwave amplifier can be used to match amplifiers as well as DC blocking.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• Journal of Advanced Navigation Technology
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• v.2 no.2
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• pp.116-125
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• 1998

Most of modern mobile communication systems require low distortion in addition to high power and high efficiency characteristics for power amplifiers. The power amplifiers cause adjacent channel interference by intermodulation and spectral regrowth. In order to analyze the effects of the power amplifier on communication system, a 22Mcps spreaded digital modulated signal source and a ISM band power amplifier have been constructed, ACPR characteristics are simulated and measured for the RZ and NRZ encoded signals.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.449-456
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• 2012

Herein, we design a wideband $8{\times}8$ waveguide Butler matrix in order to use in a multi-port amplifiers(MPAs) at Ka-band. To achieve the broadband characteristic, we design a binomial 6-slot 3 dB directional coupler which is used to configure the $8{\times}8$ Butler matrix. The measured results of the fabricated $8{\times}8$ Butler matrix have low insertion loss of less than 0.3 dB, good return loss of over 26 dB and high isolation of over 35 dB within the design bandwidth of 3 GHz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.3
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• pp.18-27
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• 1994

An 8-bit 2-stage pipelined current mode A/D converter is designed with a new architecture, where the wideband track-and-hold amplifiers which have 2 integrators in parallel sample input signal twice per clock cycle. The conversion speed of the A-D converter is two times faster than that of conventional pipelined method. The converter is designed to be operated at the power supply voltage of 3.3V with the input dynamic range of 0-256$\mu$A. HSPICE simulation results show the performance of up to 55Msamples/s and power consumption of 150mW with the parameters of ISRC $1.5\mu$m BICMOS process. The chip area is 3${\times}4mm^{2}$.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.52-56
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• 2016

This paper suggests a class-F power amplifier with split open-end stubs to provide a broadband high-efficiency operation. These stubs are designed to have wide bandwidth by splitting wide open-end stubs into narrower stubs connected in shunt in an output matching network for class-F operation. In contrast to conventional wideband class-F designs, which theoretically need a large number of matching lines, this method requires fewer transmission lines, resulting in a compact circuit implementation. In addition, the open-end stubs are designed with slant ends to achieve additional wide bandwidth. To verify the suggested design, a 10-W class-F power amplifier operating at 1.7 GHz was implemented using a commercial GaN transistor. The measurement results showed a peak drain efficiency of 82.1% and 750 MHz of bandwidth for an efficiency higher than 63%. Additionally, the maximum output power was 14.45 W at 1.7 GHz.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.76-81
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• 2015

This paper presents a design of a transmission line negative group delay (NGD) circuit with multiple pole characteristics. By inserting an additional transmission line into a conventional NGD circuit, the proposed circuit provides further design parameters to obtain wideband group delay (GD) and to help reduce signal attenuation. As a result, the number of gain compensating amplifiers can be reduced, which can contribute to stable operation when integrated into RF systems. The multiple pole characteristics can provide wider NGD bandwidth and can be obtained by connecting resonators with slightly different center frequencies separated by quarter-wavelength transmission lines. For experimental validation, an NGD circuit with two poles GD characteristic is designed, simulated, and measured.

• The Journal of the Acoustical Society of Korea
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• v.41 no.5
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• pp.507-517
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• 2022

The PhotoAcoustic Microscopy (PAM) has been proved to be a useful tool for biological and medical applications due to its high spatial and contrast resolution. PAM is based on transmission of laser pulses and reception of PA signals. Since the strength of PA signals is generally low, not only are high-performance optical and acoustic modules required, but high-performance electronics for imaging are also particularly needed for high-quality PAM imaging. Most PAM systems are implemented with a combination of several pieces of equipment commercially available to receive, amplify, enhance, and digitize PA signals. To this end, PAM systems are inevitably bulky and not optimal because general purpose equipment is used. This paper reports a PA signal receiving system recently developed to attain the capability of improved Signal to Noise Ratio (SNR) and Contrast to Noise Ratio (CNR) of PAM images; the main module of this system is a low noise, wideband signal receiver that consists of two low-noise amplifiers, two variable gain amplifiers, analog filters, an Analog to Digital Converter (ADC), and control logic. From phantom imaging experiments, it was found that the developed system can improve SNR by 6.7 dB and CNR by 3 dB, compared to a combination of several pieces of commercially available equipment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.