• Title/Summary/Keyword: Wide voltage range

Search Result 693, Processing Time 0.022 seconds

The Incremental Delta-Sigma ADC for A Single-Electrode Capacitive Touch Sensor (단일-극 커패시터 방식의 터치센서를 위한 Incremental 델타-시그마 아날로그-디지털 변환기 설계)

  • Jung, Young-Jae;Roh, Jeong-Jin
    • Journal of IKEEE
    • /
    • v.17 no.3
    • /
    • pp.234-240
    • /
    • 2013
  • This paper presents an incremental delta-sigma analog-to-digital converter (ADC) for a single-electrode capacitive touch sensor. The second-order cascade of integrators with distributed feedback (CIFB) delta-sigma modulator with 1-bit quantization was fabricated by a $0.18-{\mu}m$ CMOS process. In order to achieve a wide input range in this incremental delta-sigma analog-to-digital converter, the shielding signal and the digitally controlled offset capacitors are used in front of a converter. This circuit operated at a supply voltage of 2.6 V to 3.7 V, and is suitable for single-electrode capacitive touch sensor for ${\pm}10-pF$ input range with sub-fF resolution.

Linearity Enhancement of Partially Doped Channel GaAs-based Double Heterostructure Power FETs (부분 채널도핑된 GaAs계 이중이종접합 전력FET의 선형성 증가)

  • Kim, U-Seok;Kim, Sang-Seop;Jeong, Yun-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.39 no.1
    • /
    • pp.83-88
    • /
    • 2002
  • To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.

Developments of Extremely Low Frequency Electric Field Sensor using Guided-wave Optical Modulator (광도파로형 초저주파(ELF) 전계계측 센서의 개발)

  • Choe, Yeong-Gyu;Kim, Mun-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.39 no.6
    • /
    • pp.1-7
    • /
    • 2002
  • The use of an asymmetric Mach-Zehnder interferometric amplitude modulator to measure a relatively low frequency electric field strength is described. The sensitivity of an electric field sensor using a Ti:LiNbO$_3$ optical modulator is strongly affected by the shape of a electrode(probe antenna). To measure the low frequency electric field, a probe antenna of wide effective area is more useful than the usual dipole antenna. As a proof of this, the optical modulator was fabricated with a plate-type probe antenna and the usefulness of this antenna tested for measuring low frequency electric field strength. Measurements were performed in the range 0.1V/cm to 60V/cm at 60Hz through 100KHz. Using a probe antenna of 10mm$\times$10mm, the output voltage of 10㎷ was measured with respect to the electric field strength of 0.1V/cm at 60Hz. By increasing the effective area of the probe antenna, better sensitivity is obtainable over the measured range.

Ka-band CMOS 2-Channel Image-Reject Receiver (Ka-대역 CMOS 2채널 이미지 제거 수신기)

  • Dongju Lee;Se-Hwan An;Ji-Han Joo;Jun-Beom Kwon;Younghoon Kim;Sanghun Lee
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.23 no.5
    • /
    • pp.109-114
    • /
    • 2023
  • In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

Electroporation Conditions for DNA Transfer into Somatic Embryogenic Cells of Zoysia japonica (들잔디 체세포 배발생 세포로의 DNA 전입을 위한 Electroporation 조건 구명)

  • 박건환;안병준
    • Korean Journal of Plant Tissue Culture
    • /
    • v.25 no.1
    • /
    • pp.13-19
    • /
    • 1998
  • We have reported previously that intact embryogenic cells can be used instead of protoplasts for electroporation-mediated transformation of zoysiagrass and rice. In this study, conditions of the tissue electroporation were examined to optimize the procedures. Embryogenic cell suspensions were established in liquid MS medium containing 2 mg/L of 2,4-D with embryogenic calluses induced from mature embryos of Z. japonica. The suspension-cultured cell clumps were electroporated with 35S-gusA expression vector DNA, and degrees of DNA introduction into the cells were determined by histological expression rates of the gusA marker gene. DNA transfer into the cell clumps occurred in wide range of voltage (100-400 V) and capacitance (10-1980 $\mu\textrm{F}$), but more in the ranges of 200-300 V and 330-800 $\mu\textrm{F}$ DNA concentrations higher than 6 $\mu\textrm{g}$/mL were adequate for GUS expression of the electroporated cells. DNA transfers were confirmed in all three embryogenic cell lines but only in one out of eleven non-embryogenic lines. Positive GUS expressions occurred with DNAs added even 20-40 h after pulse treatments. As a promoter of gusA, Act1 and Ubi1 were effective 7 and 5 times than 35S respectively in number of GUS expression units on electroporated cell clumps. Embryogenic cell clumps survived and regenerated into plantlets after pulse treatments of wide range of conditions.

  • PDF

Design of a Miniaturized 5.3 GHz 360° Analog Phase Shifter (소형화된 5.3 GHz 대역 360° 아날로그 위상천이기 설계)

  • Jeong, Hae-Chang;Son, Bon-Ik;Lee, Dong-Hyun;Ahmed, Abdul-Rahman;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.24 no.6
    • /
    • pp.602-612
    • /
    • 2013
  • In this paper, a design and fabrication of miniaturized 5.3 GHz reflection type $360^{\circ}$ analog phase shifter with branch line coupler and $360^{\circ}$ variable reactance load. In order to miniaturize phase shifter, novel branch line coupler is proposed. The novel branch line coupler is miniaturized using transformation of transmission line to T and ${\pi}$ type equivalent circuit. The miniaturized branch line coupler has small size of above 50 % compared with conventional branch line coupler. For wide phase shift range, $360^{\circ}$ variable reactance load structure is adopted. Especially, the structure was improved for linear phase shift by adding transmission line which acts as an impedance transformer. The improved structure was miniaturized using the equivalent lumped-element of transmission line. The fabricated phase shifter with $15{\times}15mm^2$ shows wide phase shift of above $480^{\circ}$, the insertion loss of -4~-6 dB and the reflection loss of below -20 dB at 5.3 GHz under 0~10 V control voltage range.

The design of Fully Differential CMOS Operational Amplifier (Fully Differential CMOS 연산 증폭기 설계)

  • Ahn, In-Soo;Song, Seok-Ho;Choi, Tae-Sup;Yim, Tae-Soo;Sakong, Sug-Chin
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.37 no.6
    • /
    • pp.85-96
    • /
    • 2000
  • It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

  • PDF

Development of Liquid Crystal Optic Modulation Based X-ray Dosimeter by Using CdS Sensor (CdS 센서를 이용한 액정 광변조 X-선 검출 시스템 개발)

  • Noh, Si-Cheol;Kang, Sang-Sik;Jung, Bong-Jae;Choi, Il-Hong;Kim, Hyun-Hee;Cho, Chang-Hoon;Park, Jun-Hong;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
    • /
    • v.5 no.6
    • /
    • pp.357-361
    • /
    • 2011
  • In this study, the liquid-crystal optical modulation X-ray detection system using a CdS which is a family of II-IV compound semiconductor was proposed. The system consist of the detector, the signal processing part, the liquid-crystal driving parts, microcontroller, and I/O parts, and was designed to be suitable for miniaturization and portable. In addition, the system can measure a wide range X-ray by using the detecting range selection. In order to evaluate the performance of the proposed system, the CdS sensor's output characteristics were confirmed in accordance with changes of dose, and excellent correlation was determined. And also, the optical penetration ratio was discussed in accordance with changes of the applied voltage by measuring the change of the liquid-crystal in accordance with changes of the applied voltage. Through these results, the characteristics of the liquid-crystal optical modulation system such as the excellent reproducibility and the noise immunity were confirmed. And we considered that the CdS cell-based liquid-crystal optical modulated portable X-ray detection system could be applied to compact, low-cost, portable system.

A 13b 100MS/s 0.70㎟ 45nm CMOS ADC for IF-Domain Signal Processing Systems (IF 대역 신호처리 시스템 응용을 위한 13비트 100MS/s 0.70㎟ 45nm CMOS ADC)

  • Park, Jun-Sang;An, Tai-Ji;Ahn, Gil-Cho;Lee, Mun-Kyo;Go, Min-Ho;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.53 no.3
    • /
    • pp.46-55
    • /
    • 2016
  • This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.

Effect of operating temperature using Ni-Al-$ZrH_2$ anode in molten carbonate fuel cell (Ni-Al-$ZrH_2$ 연료극을 사용한 용융탄산염 연료전지의 온도의 영향)

  • Seo, Dongho;Jang, Seongcheol;Yoon, Sungpil;Nam, Suk Woo;Oh, In-Hwan;Lim, Tae-Hoon;Hong, Seong-Ahn;Han, Jonghee
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.06a
    • /
    • pp.134-134
    • /
    • 2010
  • Fuel cell is a device that directly converts chemical energy in the form of a fuel into electrical energy by way of an electrochemical reaction. In the anode for a high temperature fuel cell, nickel or nickel alloy has been used in consideration of the cost, oxidation catalystic ability of hydrogen which is used as fuel, electron conductivity, and high temperature stability in reducing atmosphere. Most MCFC stacks currently operate at an average temperature of $650^{\circ}C$. There is some gains with decreased temperature in MCFC to diminish the electrolyte loss from evaporation and the material corrosion, which could improve the MCFC life. However, operating temperature has a strong related on a number of electrode reaction rates and ohmic losses. Baker et al. reported the effect of temperature (575 to $650^{\circ}C$). The rates of cell voltage loss were 1.4mV/$^{\circ}C$ for a reduction in temperature from 650 to $600^{\circ}C$, and 2.16mV/$^{\circ}C$ for a decrease from 600 to $575^{\circ}C$. The two major contributors responsible for the change in cell voltage with reducing operation temperature are the ohmic polarization and electrode polarization. It appears that in the temperature range of 550 to $650^{\circ}C$, about 1/3 of the total change in cell voltage with decreasing temperature is due to an increase in ohmic polarization, and the electrode polarization at the anode and cathode. In addition, the oxidation reaction of hydrogen on an ordinary nickel alloy anode in MCFC is generally considered to take place in the three phase zone, but anyway the area contributing to this reaction is limited. Therefore, in order to maintain a high performance of the fuel cell, it is necessary to keep this reaction responsible area as wide as possible, that is, it is needed to keep the porosity and specific surface area of the anode at a high level. In this study effective anodes are prepared for low temperature MCFC capable of enhancing the cell performance by using zirconium hydride at least in part of anode material.

  • PDF