• 제목/요약/키워드: Wide voltage operation

검색결과 254건 처리시간 0.027초

A Low-Power Current-Mode CMOS Voltage Reference Circuit (저전력 전류모드 CMOS 기준전압 발생 회로)

  • 권덕기;오원석
    • Proceedings of the IEEK Conference
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.1077-1080
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    • 1998
  • In this paper, a simple low-power current-mode CMOS wotage reference circuit is proposed. The reference circuit of enhancement-mode MOS transistors and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a threshold voltage. The designed circuit has been simulated using a $0.65\mu\textrm{m}$ n-well CMOS process parameters. The simulation results show that the reference circuit has a temperature coefficient less than $7.8ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.079%/V for a temperature range from $-30^{\circ}C$ to $130^{\circ}C$ and a VDD range from 4.0V to 12V. The power consumption is 105㎼ for VDD=5V and $T=30^{\circ}C.$ The proposed reference circuit can be designed to generate a wide range of reference voltages owing to its current-mode operation.

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High-Frequency Soft-Switching PWM DC-DC Power Converter for Low Voltage Large Current Applications

  • Muraoka Hidekazu;Sakamoto Kenya;Nakaoka Mutsuo
    • Proceedings of the KIPE Conference
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.198-202
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    • 2001
  • This paper presents a novel prototype version of ZCS-PWM forward DC-DC power converter using power MOSFETs which is designed for application specific low voltage large current conversion operation. The soft-switching forward power converter with a high frequency isolated transformer link which can efficiency operate over wide load ranges under two conditions of ZCS as well as active voltage clamped switching is evaluated and discussed on the basis of the simulation and experimental results.

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Hybrid Pulse Width Modulation Strategy for Wide Speed Range in IPMSM with Low Cost Drives

  • Ahn, Han-woong;Go, Sung-chul;Lee, Ju
    • Journal of Electrical Engineering and Technology
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    • 제11권3호
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    • pp.670-674
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    • 2016
  • The control performance of hybrid PWM inverter using a phase current measurement is presented in this paper. The hybrid PWM technique consists of space vector pulse width modulation (SVPWM) and six-step voltage control operation. The SVPWM is performed to reduce the harmonic components in the low speed region, and the six-step modulation is applied to increase the maximum speed of the IPMSM in the high speed region. Therefore, it is possible to obtain a great performance in both the low speed range and high speed range. However, the six-step modulation cannot be completely implemented, since the inverter that includes the lag-shunt sensing method has an immeasurable current region. In this paper, a quasi-six-step modulation using a modified voltage vector is proposed. The validity and usefulness of the proposed PWM technique is verified by MATLAB/Simulink and experimental results.

Study on DC Analysis of 4H-SiC Recessed-Gate MESFETs using modeling tools (4H-SiC Recessed-gate MESFET의 DC특성 모델링 연구)

  • Park, Seung-Wook;Kang, Soo-Chang;Park, Jae-Young;Shin, Moo-Whan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.238-242
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    • 2001
  • In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

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A New Reference Cell for 1T-1MTJ MRAM

  • Lee, S.Y.;Kim, H.J.;Lee, S.J.;Shin, H.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권2호
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    • pp.110-116
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    • 2004
  • We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

Improved ZVT(Zero Voltage Transition) Boost Converter (개선된 ZVT 부스트 컨버터)

  • Lee Il-Oun;Lee Dong-Young;Cho Bo-Hyung
    • Proceedings of the KIPE Conference
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.673-676
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    • 2001
  • In this paper, the improved zero-voltage transition(ZVT) PWM boost converter using an inductor feedback technique is proposed. The improved circuit uses a low-voltage zener diode to reduce the turn-off witching loss of the auxiliary witch and EMI noise. Using this technique, soft-witching for the auxiliary switch is guaranted at wide line and load ranges and some of the energy circulating in the auxiliary circuit is fed to the load Since the active switches are turned on and off softly, the witching losses and EMI noise are reduced significantly and the higher efficiency of the system is achieved. In this paper, the modes of converter operation are explained and analyzed, design guidelines are given, and experimental results of 1kW, 100kHz prototype system are presented.

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Study on DC Analysis of 4H-SiC Recessed-Gate MESFETs using modeling tooths (4H-SiC Recessed-gate MESFET의 DC특성 모델링 연구)

  • 박승욱;강수창;박재영;신무환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.238-242
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    • 2001
  • In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

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Interleaved Boost-Flyback Converter with Boundary Conduction Mode for Power Factor Correction

  • Lin, Bor-Ren;Chien, Chih-Cheng
    • Journal of Power Electronics
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    • 제12권5호
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    • pp.708-714
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    • 2012
  • This paper presents a new interleaved pulse-width modulation (PWM) boost-flyback converter to achieve power factor correction (PFC) and regulate DC bus voltage. The adopted boost-flyback converter has a high voltage conversion ratio to overcome the limit of conventional boost or buck-boost converter with narrow turn-off period. The proposed converter has wide turn-off period compared with a conventional boost converter. Thus, the higher output voltage can be achieved in the proposed converter. The interleaved PWM can further reduce the input and output ripple currents such that the sizes of inductor and capacitor are reduced. Since boundary conduction mode (BCM) is adopted to achieve power factor correction, power switches are turned on at zero current switching (ZCS) and switching losses are reduced. The circuit configuration, principle operation, system analysis, and design consideration of the proposed converter are presented in detail. Finally, experiments conducted on a laboratory prototype rated at 500W were presented to verify the effectiveness of the converter.

A Study on 3-level Interleaved Charger-Discharger for Uninterruptible Power Supplies (무정전전원장치용 3-레벨 인터리브드 충방전기에 대한 연구)

  • Koo, Tae-Geun;Lee, In-Hwan;Cho, Young-Hoon
    • The Transactions of the Korean Institute of Power Electronics
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    • 제22권6호
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    • pp.535-542
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    • 2017
  • This paper proposes a simple 3-level interleaved charger-discharger for the uninterruptible power supply (UPS) with various combinations of battery cells. The proposed converter not only improves charging and discharging efficiency, but also reduces the physical volume and the cost. Furthermore, the converter also offers the capability of the neutral point voltage, so that more stable operation can be obtained. In addition, the proposed converter significantly reduces the ripple current of the battery inductor, thereby providing an expected life extension of the battery. Experimental results for a 300kVA UPS prototype verify the validity of the proposed converter. The proposed charger-discharger is suitable for UPSs and energy storage systems (ESSs) with wide input battery voltage ranges.

A Controllable LCL-T Resonant AC/DC Converter for High Frequency Power Distribution Systems

  • Zeng, Jun;Li, Xuesheng;Liu, Junfeng
    • Journal of Power Electronics
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    • 제15권4호
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    • pp.876-885
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    • 2015
  • High frequency alternating current (HFAC) has been widely used in a wide range of power distribution systems (PDS) due to its superior performance. A high frequency AC/DC converter plays the role of converting HFAC voltage to DC voltage. In this paper, a new LCL-T resonant AC/DC converter has been proposed, and an easier control method based on input voltage comparison is presented, without the complicated calculation of the zero-crossing point. Both a low distortion and near-to-unity power factor can be achieved by the proposed resonant converter and control strategy. The operational principle and steady-state analysis are given for the proposed resonant converter. A simulation model and experimental prototype are implemented with an operation frequency of 25kHz and a rated power of 20W. The simulation and experimental results verify the accuracy of the analysis and the excellent performance of the proposed topology.