• Journal of Power Electronics
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• v.9 no.5
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• pp.809-821
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• 2009

This paper proposes a new phase-shift full-bridge DC-DC converter by applying energy recovery circuits to a conventional full-bridge DC-DC converter in plasma display panel applications. The converter can achieve soft-switching in main-switches by an extra auxiliary resonant network even with the wide operating condition of both output load and input voltage. The un-coupled design guidelines to the main bridge-leg component parameters for soft-switching operation contribute to conduction loss reduction in the transformer primary side leading to efficiency improvement. The auxiliary switches in the resonant network also operate in zero-current switching. This paper analyzes the operation modes of the proposed scheme and presents the key design guidelines through steady state analysis. Also, the paper verifies the validity of the circuits by hardware experiments with a 1kW DC/DC converter prototype.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.376-378
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• 2008

A new family of single-phase Z-source ac-ac converter(SZAC) based on single-phase matrix converter (SPMC) is proposed in this paper. Compared to conventional Z-source ac-ac converter, the proposed SZAC has unique feature: providing a wide range of output ac voltage with buck/boost in-phase (maintaining phase angle) and buck/boost out-of-phase (reversing phase angle) operation. A new commutation strategy is used to eliminate voltage spikes on switches. The operating principle of the proposed SZAC is presented. Analysis and experimental results are also presented.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1296-1308
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• 2014

This paper presents a new zero voltage switching (ZVS) converter for medium power and high input voltage applications. Three three-level pulse-width modulation (PWM) circuits with the same power switches are adopted to clamp the voltage stress of MOSFETs at $V_{in}/2$ and to achieve load current sharing. Thus, the current stresses and power ratings of transformers and power semiconductors at the secondary side are reduced. The resonant inductance and resonant capacitance are resonant at the transition interval such that active switches are turned on at ZVS within a wide range of input voltage and load condition. The series-connected transformers are adopted in each three-level circuit. Each transformer can work as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer. Thus, no output inductor is needed at the secondary side. Three center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Compared with the conventional parallel three-level converters, the proposed converter has less switch counts. Finally, experiments based on a 1.44kW prototype are provided to verify the operation principle of proposed converter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.391-394
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• 2006

This paper presents soft switching zero voltage switching high frequency inverter for rare gas fluorescent lamp using dielectric-barrier discharge phenomenon. The simple high-frequency inverter can completely achieve stable zero voltage soft switching (ZVS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZVS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this high frequency Inverter are illustrated as compared with computer simulation results and experimental ones. Its light dimming characteristics due to power regulation scheme are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proven from the practical point of view.

• Journal of Power Electronics
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• v.16 no.3
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• pp.872-882
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• 2016

A novel pseudo-continuous conduction mode (PCCM) voltage-fed single-stage power factor correction (PFC) full-bridge battery charger is proposed in this paper. By connecting a freewheeling transistor in parallel with an input inductor, the PFC cell can operate in the PCCM with a constant duty ratio. Thus, the dc/dc stage can be designed using this constant duty ratio and the restriction on the duty ratio of the PFC cell is eliminated. As a result, the input current distortion is less and the dc bus voltage becomes controllable over the wide output power range of the battery charger. Moreover, the operation principle of the dc/dc stage is designed to be similar to that of a conventional phase-shifted full-bridge converter. Therefore, it is easy to implement. In this paper, the operation of the new converter is explained, and the design considerations of the controller and key parameters are presented. Simulation and experimental results obtained from a 1 kW prototype are given to confirm the operation of the proposed converter.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.2
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• pp.103-110
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• 2010

In this paper, a new mode changeable asymmetric full bridge dc/dc converter is proposed to solve the freewheeling current problem of the conventional zero voltage switching(ZVS) phase shift full bridge(PSFB) dc/dc converter of low output voltage and high output current applications. The proposed converter is operated as an asymmetric full bridge converter when the duty cycle is less than 50% and active clamp full bridge converter when the duty cycle is greater than 50%. As a result, since its freewheeling current is eliminated, the conduction loss is lower than that of the conventional ZVS PSFB dc/dc converter. Moreover, ZVS of all power switches can be ensured along a wide load ranges and output current ripple is very small. Therefore, high efficiency of the proposed converter can be achieved. Especially since its operation mode is changed to the active clamp full bridge converter during hold up time and can be operated with 50~100% duty ratio, it can produce the stable output voltage along wide input voltage range. The operational principles, theoretical analysis and design considerations are presented. To confirm the operation, validity and features of the proposed converter, experimental results from a 1.2kW($400V_{dc}/12V_{dc}$) prototype are presented.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• Proceedings of the KIEE Conference
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• 2006.10d
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• pp.129-131
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• 2006

This paper presents a new ZVS-PWM high frequency inverter. The ZVS operation is achieved in the whole load range by using a simple auxiliary reverse blocking switch in parallel with series resonant capacitor. The operating principle and the operating characteristics of the new high frequency circuit treated here are illustrated and evaluated on the basis of simulation results. It was examined that the complete soft switching operation can be achieved even for low power setting ranges by introducing the high frequency dual duty cycle control scheme. In the proposed high frequency inverter treated here, the dual mode pulse modulation control strategy of the asymmetrical PWM in the higher power setting ranges and the lower power setting ones, the output power of this high frequency inverter could introduce in order to extend soft switching operation ranges. Dual duty cycle is used to provide a wide range of output power regulation that is important in many high frequency inverter applications. It is more suitable for induction heating applications the operation and control principle of the proposed high frequency inverter are described and verified through simulated results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.110-116
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• 2004

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.