• The Transactions of the Korea Information Processing Society
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• v.6 no.5
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• pp.1385-1392
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• 1999

This paper describes the design of the monitoring system for monitoring the current status and indirect controlling of the Wet Station Equipment which is used for cleaning the wafer. Most of the conventional monitoring system depend on the special hardware and software. Basic design goal of monitoring system is provide the convenience for the use and the portability for the system. In order for the system to fulfil its requirements, it was designed using GUI (Graphical User Interface) facility based on the windows NT environment of IBM PC compatible and EtherNet board based on the TCP/IP protocol.

• Journal of Conservation Science
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• v.28 no.1
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• pp.21-27
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• 2012

In the Chosun period, the noble class usually buried the dead bodies in the lime-covered tomb. Recently their costumes are excavated while maintaining the shape. However, the textiles discovered from the inside have been degradated by a body and moisture. To conserve these textiles one of the most important thing is how to clean these textiles right after the excavation. The purpose of this study is to examine the effects of wet cleaning to minimize the color change of textile remains. For this purpose, silk and cotton were dyed with natural dyes (7 red, 1 blue, 6 yellow, 4 green and 4 purple colors), then they were kept for 6 months with pork meat at $10^{\circ}C$, and were washed by four cleaning solutions (water, anionic surfactant (SDS), non-ionic surfactant (Triton X-100) and natural surfactant (saponin)) at $20^{\circ}C$ and $40^{\circ}C$. The color change was evaluated by color difference (${\Delta}E$) between non-treated and after washed samples. From the results, it was found that the color changes are significantly different depending on the washing temperature, textile material, the cleaning agents and the type of dyes.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1450-1452
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• 1996

In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1240-1247
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• 2003

Water jet nozzle for LCD has been used as a wet cleaning process in many industries. It is necessary for the nozzle to consider cleaning effect and flux. In this paper, we applied the bubble dynamic theory(Rayleight-Plesset equation) to improve the cleaning efficiency. Generally, Rayleigh-Plesset equations for cavitation bubbles are used in analyzing computer simulation for caviting flows. Burst of bubbles causes potential energies and we can use these energies to remove organic and inorganic compounds on the LCD. Therefore, it is necessary to analyze the bubble generations and axiomatic design by computational fluid dynamics(CFD). By comparing the weight matrix of neural networks to the design matrix of axiomatic design, we propose methods to verify designs objectively. The optimal solution could be deduced by the regression analysis using the design parameters.

• Journal of the Korean Society of Costume
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• v.47
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• pp.89-100
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• 1999

This study was carried to a textile conservation process included washing effect fiber analysis such as fiber identification fabric density and thickness color fading and of extracted soils. the following results were obtained. 1. AS a result of investigating to fabric surfaces by S.E.M all of cleaning methods wet cleaning-solvent cleaning in charge system were effective to remove soils from fabrics. 2. The buried fabrics were made of silk few of them were cotton ramie and hemp. 3. According to fabric density and thickness used fabrics were almost medium weight fabrics. 4. Low values of L, a, b indicated that the colors of these fabrics were faded to yellow and brown. 5. The soil components were hydrocarbon-alkane group alkyl alcohol and ketone group.

• 한국문화재보존과학회:학술대회논문집
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• 2007.05a
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• pp.73-74
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.15.1-15.1
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• 2006

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.109-113
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• 2011

Hot air flow simulations of the wet station dryer module for the solar cell cleaning were conducted. Air incident angles such as to the substrates ($45^{\circ}$), to the bottom ($90^{\circ}$), and to the wall ($135^{\circ}$) were considered. Based on the simulated velocity and temperature profiles, appropriate incident angle was proposed, and it was well matched to experimental results. Additionally, uniform and non-uniform air hole sizes of the tube were compared for the uniform air flow distribution through the batch.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.168-168
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• 2009

고효율 실리콘 이종접합 태양전지 제작을 위한 요소기술 중 a-Si:H/c-Si 간의 계면 안정화는 태양전지 효율에 중요한 역할을 한다. 본 연구에서는 n-type 결정질 실리콘 기판을 사용하여, 소수전하들의 재결합을 방지하고, 계면 안정화를 실행하는 방안으로 실리콘 기판 습식 세정을 수행하였다. 반도체 공정에서 일반적으로 알려진 RCA 세정기법에 HF 세정을 마지막공정으로 추가하여 자연 산화막과 기타 불순물을 더욱 효과적으로 제거할 수 있도록 실험을 진행하였다. 마지막 공정으로 추가된 HF 세정에 의한 a-Si:H/c-Si 계면 안정화 효과를 관찰하기 위하여 HF농도와 HF 세정시간에 따른 소수반송자 수명을 측정하였다. 또한 HF 세정 이후 공정의 영향을 확인하기 위하여 PE-CVD법으로 a-Si:H 박막 증착 이전 실리콘 기판의 온도와 상온에서 머무는 시간에 따른 a-Si:H/c-Si 계면안정화 특성을 분석하였다. 본 실험을 통해 HF세정공정이 계면특성에 미치는 영향을 확인하였으며 실리콘 기판 습식 세정이 이종접합태양전지 특성에 미치는 영향을 분석하였다.