• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.8
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• pp.3597-3601
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• 2013

In this study, a wet cleaning process, P II, using aqua-regia and sulfuric acid mixture with oxidant agent ($K_2S_2O_8$, $P_2O_5$, $KMnO_4$, $H_2O_2$ etc) is proposed to remove the metastable phase of graphite such as graphene and DLC for high quality synthetic diamonds. The process employed the conventional acid cleaning process (P I) as well as P I+P II to remove the graphite related impurities from the 200um-diamond powders synthesized at 7GPa-$1500^{\circ}C$-5minutes. The degree of cleaning after P I and P I+P II has been observed by naked-eye, optical microscopy, micro-Raman spectroscopy, and TGA-DTA. After P I+P II, the color of diamond became more vividly yellow with enhanced saturation with naked eye and optical microscopy analysis. Moreover, the disappearance of diamond-like-carbon (DLC) peak ($1440cm^{-1}$) observed by Raman spectroscopy confirmed the decrease in amount of remaining impurities. TGA-DTA results showed that the graphite impurities first started to dissolve at $770.91^{\circ}C$ after PI process. However, the pyrolysis started at $892.18^{\circ}C$ after P I+P II process because of the dissolution of pure diamonds. This result proved the effective dissolution of the metastable phase of graphite. We expect that the proposed P II process may enhance the quality of diamonds through effective removal of surface impurities.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.135-140
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• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.13-19
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• 2004

We have been studied on the high concentration ozonized water production technology which substitute for the SPM wet cleaning solution process as the PR strip process after the photolithography process in the semiconductor and flat panel display manufacturing. In this work, we have developed the surface discharge type ozone generator which has the characteristics of the 12 ［wt%］ ozone concentration at the oxygen gas flow of 0.5［ℓ/min］ oxygen per cell and also developed the high efficiency ozone contactor for the mixing ozone gas with deionized water. As the production test results of the ozonized water, we obtained the ozonized water concentration above 80［ppm］ at the 10［wt%］ ozone gas concentration, and also had a good result of the PR strip rate of 147［nm/min］. at the 70［ppm］ ozonized water.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.9-19
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• 1997

The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

• Particle and aerosol research
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• v.14 no.4
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• pp.89-95
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• 2018

People's environmental concerns for fine particles in Korea lead to the strong necessity of improving the performance of environmental control systems. Wet electrostatic precipitators (ESPs) are considered as one of the alternatives to overcome the limit of previous dry ESPs, the re-entrainment of collected particles during rapping and back corona problem for high electrical resistivity dusts etc. In this study, a wire-cylindrical ESP with a thin water film has been developed. Particle collection characteristics were compared in the ESP with operations of water film on and off. Particle collection efficiencies at various applied voltages as well as voltage-current curves were almost the same in the ESP with and without a water film. Particle collection performance for PM1.0, PM2.5 and PM10 in the wet ESP with a water film was constantly maintained with operation time even in the high dust loading environment. This results indicate that a uniform water film in our wet ESP was successfully formed with a very thin layer without any dry spot and therefore could continuously clean the collected particles on the inner wall of the ESP without any performance degradation.

• Conservation Science in Museum
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• v.9
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• pp.67-83
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• 2008

This study is process of conservation treatment for textiles and custumes containing Jikgeum(weave with supplementary golden wefts) and Bugeum(Gold sticking) among excavated ones(including all of Sinsu751) of Cheongyeongunju (a princess) collected by the National Museum of Korea. Adhesive strength was reinforced by coating 2% solution of glue on layer of gold disintegrated in the course of depletion of gold(Au) on the surface after conducting nondestructive test(X-ray fluorescent analysis) of flat gold strip and gold sticking. To remove dust on the surface and polluted materials, dry cleaning through vacuum suction and spray-type wet cleaning were conducted simultaneously and damaged part was restored to recover the relics to original state.

• Textile Coloration and Finishing
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• v.11 no.5
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• pp.30-37
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• 1999

The extracts drawn out from Artemisia princeps by water was concentrated. Using this concentrate the silk and the cotton fabrics were dyed, and they were measured with the K/S value, surface color and mordant quantity in order to evaluate the dyeability and the antimicrobial activity. The results are as follows; 1. The K/S value of the silk fabric was much higher than that of the cotton fabric. And the color yield of the dyed silk fabric was most efficient for the premordanting method. 2. The surface colors on the dyed fabric depended heavily upon mordants used or mordanting methods. For all cases, the value of the dyed fabric was generally dark. For the Cr-mordant among various mordants, the chroma produced clear and the color difference was distinct when using the Fe-mordant. 3. On the other hand the amount of absorbed mordant in the silk fabric was larger than that of the cotton fabric. And the Cu-mordant was most efficient. 4. The color fastness was significantly improved when mordants were added. Cr-mordant improved best in all of the dry cleaning, wet cleaning and perspiration fastness. Iron and abrasion fastness showed over 4-5 grade regardless of any mordant. And light fastness was best in Cu-mordant. 5. The Cu-mordant showed the greatest antimicrobial activity in both of mordant treat silk and cotton fabrics.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1528-1530
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• 1997

As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Conservation Science in Museum
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• v.11
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• pp.17-30
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• 2010

Here is an introduction of the conservation process and storing method of 26 garments for exhibition among the excavated garments of Cheonngyeongunju(a princess) preserved in the National Museum of Korea. Before processing, the artifacts were investigated to find out the type of material and the damaged parts, and then surface and wet cleaning were conducted. After that, it were dried and fixed while held by hand for stability of the artifacts. When stored, the artifact was folded minimally in large parts to prevent damage and placed in a neutral box with buffers in between.