• 제목/요약/키워드: Well resistance

검색결과 3,073건 처리시간 0.035초

모래기둥의 설치 간격에 관한 연구 (A Study on the Spacing between the Sand Drain Wells)

  • 김홍택
    • 한국지반공학회지:지반
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    • 제8권1호
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    • pp.67-80
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    • 1992
  • 본 연구에서는 시간에 따른 공사하중의 크기 변화가 다양할 경우에, smear zone및 well resistance의 영향을 모두 고려하여 설계시에 요구되는 모래기등 영향원의 반지름(즉, 모래기둥의 설치간격)을 결정하기 위한 해석법을 제시하였다. 이를 위해 단순선형점증하중의 경우에 대해 제시된 Olson의 해석법(smear zone 및 well resistance의 영향을 모두 무시한 경우)을 변형하였으며, 아울러 제시된 해석법을 토대로 설계에 관련된 여러가지 변수가 모래기end의 설치간격에 미치는 영향을 조건별로 분석하였다.

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교란효과와 배수저항을 고려한 연직 배수재 설계 (Design of Vertical Drain in Consideration of Smear Effect and Well Resistance)

  • 이달원
    • 한국농공학회지
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    • 제42권4호
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    • pp.115-123
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    • 2000
  • This study compared the degree of consolidation by hyperbolic, curve fitting , Asaoka's and methods using values measured with a theoretical curve in consideration of smear effect and well resistance. The degree of consolidation by the Hyperboilc method was underestimated than the degree of consolidation by Curve fitting. Asaoka's , and Monden's methods. The typical range of the coefficient of horizontal consolidation was Ch=(2-3)Cv in the case considering smear effect and well resistance, and Ch =(0.5-2.1) Cv in the case disregarding smear effect and well resistance. The degree of consolidation obtained by ground settlement monitoring was nearly the same value when the coefficient of smear zone permeability by back analysis was shown to be half that of in-situ and the diameter of the smear zone was shown to be double that of mandrel. By increasing the diameter reduction ratio of the drain, the time of consolidation was delayed. The effect of well resistance showed that the case of a small coefficient of permeability was much more than in the case of a large coefficient of permeability . It was recommended that when designing diameter reduction of a drain, well resistance should be considered.

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Twin-well Non-epitaxial CMOS Substrate에서의 노이즈 분석을 위한 Substrate Resistance 및 Guard-ring 모델링 (A Substrate Resistance and Guard-ring Modeling for Noise Analysis of Twin-well Non-epitaxial CMOS Substrate)

  • 김봉진;정해강;이경호;박홍준
    • 대한전자공학회논문지SD
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    • 제44권4호
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    • pp.32-42
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    • 2007
  • [ $0.35{\mu}m$ ]twin-well non-epitaxial CMOS 공정에서의 substrate noise에 의한 아날로그 회로의 성능 저하를 예측하기 위하여 substrate 저항을 모델링하였다. Substrate 저항 모델 방정식은 P+ guard-ring isolation에 적용되어 측정값과 일치함을 확인하였다. Substrate 저항을 네 가지 형태로 구분하고 각각에 대하여 semi-empirical 모델 방정식을 확립하여, 측정값과 비교하여 rms 오차가 10% 미만이 되었다. 이 substrate 저항 모델을 guard-ring에 의한 isolation 구조에 적용하기 위하여 모델 방정식과 ADS(Advanced Design System) 회로 시뮬레이션에 의한 결과와 Network Analyzer의 측정 결과를 비교하였고, 비교적 잘 일치함을 확인하였다.

교란효과와 배수저항을 고러한 연직 배수재의 설계 (Design of Vortical Drain in consideration of Smear Effect and well Resistance)

  • 김태우;강예묵;이달원
    • 한국농공학회:학술대회논문집
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    • 한국농공학회 1998년도 학술발표회 발표논문집
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    • pp.438-443
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    • 1998
  • In this study, compared the degree of consoildation of vertical drain considering variation of smear effect and well resistance with that of hyperbolic and curve fitting method. It applied Barren, Yoshikuni, Hansbo, Onoue's theory for the consolidation of vertical drain, and compared differences of theoretical curve by comparing with measured value, and finded out the extent of smear effect and well resistance.

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PBD의 배수특성과 대심도 지반개량 (Discharge Capacity of PBD and Deep Soft Soil Improvement)

  • 구본효
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2002년도 가을 학술발표회 논문집
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    • pp.585-592
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    • 2002
  • Discharge capacity of PBD is the most important factor of specification items to control any product of PBD. There is no standard specification for the PBD. Because the degree of discharge capacity is related to well resistance, install depth, maximum strain etc in the field. Discharge capacity test of PBD, permeability test of filter are conducted using PBD materials used in Korea. This paper proposes the critical discharge capacity for deep PBD under condition of non well resistance based upon their test and theoretical calculation. It was found that discharge capacity more than about 10 ㎤/sec is enough to undergo designing of deep PBD without well resistance.

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The Effect of Contextual Factors on Resistance to Change in Lean Transformation

  • TRAN, Duc Trong;PHAM, Huong Thu;BUI, Van Thu
    • The Journal of Asian Finance, Economics and Business
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    • 제7권11호
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    • pp.479-489
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    • 2020
  • The purpose of this paper is to uncover whether and how contextual factors (information exchange, participation, trust in management, and training), relate to resistance to change. It also explores the mediating effect of perceived impact of change on the relations between contextual factors and resistance to change. This study is conducted in several manufacturing plants in food processing industry in Vietnam, which is implementing a top-down large-scale change - Lean transformation, adopting Total Productive Maintenance (TPM) program, to be specific. The findings suggest that all four contextual factors are negatively associated with resistance to change, in which training had the strongest impact. Also, the perceived change impact partially mediates the relationships between the four contextual factors and resistance to change. The practical implications of this paper are that employees who receive adequate, timely and useful information relating to change are less likely to show opposing behaviors towards change. Fostering trust in management among employees, and employee involvement in decision-making, also have a significant influence when addressing employee resistance to change. Employees who are well-trained, well-equipped with tools and knowledge about the change, are less likely to resist as they view the benefits of changes more significant than the risks.

A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

  • Lee, Jaelin;Kim, Suna;Hong, Jong-Phil;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.381-386
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    • 2013
  • A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a $0.13{\mu}m$ CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD.

Differentially Expressed Genes Related to Cold-resistance in Barley (Hordeum vulgare L. cv. Nagaoka)

  • Chun, Jong Un;Park, Jeong-Seon;Bae, Chang-Hyu;Shin, Jeong-Sheop
    • 한국육종학회지
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    • 제41권2호
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    • pp.73-83
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    • 2009
  • To investigate genes related to vernalization and cold- resistance in barley (Hordeum vulgare L. cv. Nagaoka), differentially expressed genes were identified from cold-resistant barley leaves with suppression subtractive hybridization (SSH) and Northern blot analyses. The nucleotide and the deduced amino acid sequences of the putative gene products were compared. The bvrn-7 showed high homology(84%) with gene related to vernalization, and the bvrn-3, bvrn-12, bvrn-28, bvrn-29 and bvrn-36 related to cold-resistant genes had high identity of 88~98% with low temperature-induced genes. The results indicate that the 6 genes were closely related to vernalization and cold-resistance during low temperature treatment.

Mediation of Rubradirin Resistance by ABC Transporters (RubT1) from Streptomyces achromogenes var. rubradiris NRRL3061

  • Lamichhane, Janardan;Oh, Tae-Jin;Lee, Hei-Chan;Liou, Kwang-Kyoung;Kim, Chun-Gyu;Sohng, Jae-Kyung
    • Journal of Microbiology and Biotechnology
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    • 제16권12호
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    • pp.1928-1934
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    • 2006
  • The rubradirin biosynthetic gene cluster harbors 58 ORFs within a 105.6-kb sequence, which includes all of the genes responsible for the synthesis of rubradirin, as well as the primary genes relevant to regulatory, resistance, and transport functions. This gene cluster also harbors a resistance-mediating ABC transporter, RubT1, which is located at the most upstream position in the cluster. In the present study, RubT1 was expressed heterologously in E. coli, and the resistance affinity of RubT1 was determined by an antibacterial activity test, as well as by HPLC and ESI-MS analyses. Evidence clearly demonstrates that RubTl mediates rubradirin resistance as an ABC transporter.

일차진료 항생제 치료기간과 비인두 항생제 내성률에 대한 연구 고찰 (A Review of Studies on Antibiotic Course and Antibiotic Resistance in Nasopharyngeal Pathogens in Primary Care Setting)

  • 신향화;이선행;윤성중;장규태
    • 대한한방소아과학회지
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    • 제32권2호
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    • pp.64-71
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    • 2018
  • Objectives The purpose of this study is to examine the correlation of antibiotics administration duration and antimicrobial resistance by reviewing domestic and foreign literatures. Methods We searched literatures dated up to 23 February, 2018 in PubMed and Cochrane Library using terms of "Anti-Bacterial Agents", "Carrier State", "Nasopharynx", "Drug Administration Schedule", and also searched via RISS (Research Information Service System), KISS (Koreanstudies Information Service System), DBpia (DataBase Periodical Information Academic) using terms of antibiotics, resistance, and dose. Results In comparison with shortened and standard antibiotic course, longer treatment duration is associated with greater antimicrobial resistance or non-significant difference, but we cannot find literature that shortened antibiotic course increases antimicrobial resistance on human nasopharyngeal flora. Conclusions Currently, there is no evidence that completing the standard antibiotic course reduces antimicrobial resistance. It can be a strategy for reducing antibiotic use to apply Korean medicine treatment, as well as short-course antibiotic therapy or delayed antibiotic prescription. Additional well-designed trials should be conducted in domestic and foreign settings about the appropriate duration of antibiotic therapy.