JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

  • Lee, Jaelin (Department of Electrical Engineering, KAIST) ;
  • Kim, Suna (Department of Electrical Engineering, KAIST) ;
  • Hong, Jong-Phil (Department of Electrical Engineering, Chungbuk National University) ;
  • Lee, Sang-Gug (Department of Electrical Engineering, KAIST)
  • Received : 2013.03.07
  • Accepted : 2013.04.29
  • Published : 2013.08.31
Download PDF
⟨ Previous Next ⟩

Abstract

A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a $0.13{\mu}m$ CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD.

Keywords

References

  1. R. Han, Y. Zhang, D. Coquillat, H. Videlier, W. Knap, E. Brown, and K. K. O, "A 280-GHz Schottky diode detector in 130-nm digital CMOS", IEEE J. Solid-State Circuits, vol. 46, no. 11, pp.2602-2012, Nov. 2011 https://doi.org/10.1109/JSSC.2011.2165234
  2. S.-M.Chen, Y.-K.Fang, F.R.Juang, W.-K.Yeh, C.- P.Chao, and H.-C.Tseng, "Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications", Thin Solid Films, vol 519, no. 1, pp.471-474, Oct. 2010 https://doi.org/10.1016/j.tsf.2010.07.113
  3. W. Kellner, N. Enders, D. Ristow and H. Kniepkamp, "Design considerations for planar schottky barrier diodes", Solid-State Electronics, Vol. 23, pp.9-15, Mar. 1979
  4. R. Rassel, J. Johnson, B. Orner, S. Reynolds, M. Dahlstrom, J. Rascoe, A. Joseph, B. Gaucher, J. Dunn, and S. S. Onge, "Schottky barrier diodes for millimeter wave SiGe BiCMOS applications", IEEE Bipolar/BiCMOS Circuit Technol. Meeting, pp.255-258, Oct. 2006
  5. S. A. Maas, Microwave Mixers. Boston, MA: Artech House, 1993
  6. Q. Zhang and T.S.Sudarshan, "Lateral current spreading in SiC Schottky diodes using metal overlap edge termination", Solid-State Electronics, Vol. 45, pp.1847-1850, 2001 https://doi.org/10.1016/S0038-1101(01)00191-5
  7. Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices. Prentice Hall, 2006
  8. Veljko Milanovic, Michael Gaitan, Janet C. Marshall, and Mona E. Zaghloul, "CMOS Foundary Implementation of Schottky diodes for RF Detection", IEEE T. on Electron Devices, Vol. 43, No. 12, Dec. 1996