• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• Journal of Advanced Navigation Technology
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• v.14 no.3
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• pp.426-431
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• 2010

68% of the manufacturing costs of solar cell wafer can be attributed to the slurry. The recycling of slurries is mandatory for reducing the costs of manufacturing wafering production, and the disposal of industrial waste, as well as for cutting down pollution levels. Slurries are currently being recycled using the centrifuge(decanter) method. However, this method is less than optimal as it does not completely remove the fine particles, leading to low quality. Also, be cause of the incomplete separation from the oil, it causes the impurities in the dried slurries. This study aims to develope a new recycling technology that overcomes the flaws of the centrifuge by utilizing chemicals. It will provide a total solution to the crucial process of recycling slurries in the making of solar cell wafer, by increasing the efficiency and renewable rate.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.59.2-59
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• 2000

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.31-32
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• 2012

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.187-194
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• 2002

For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• Ceramist
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• v.21 no.2
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• pp.75-82
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• 2018

In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.