• 전자공학회논문지D
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• 제34D권10호
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• pp.68-76
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• 1997

In this paper, design parameters of rapid thermal processing(RTP) to minimize the wafer temperature uniformity errors are proposed. Lamp ring positions and the wafer height are important parameters for wafer temperature uniformity in RTP. We propose the method to seek lamp ring positions and the wafer gheight for optimal temperature uniformity. The proposed method is applied to seek optimal lamp ring positions and the wafer feight of 8 inch wafer. To seek the optimal lamp ring positions and the wafer height, we vary lamp ring positions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programming problem. Finally, it is shown that the wafer temperature uniformity in RTP designed by optimal problem. Finally, it is hsown that the wafer temperature uniformity is RTP designed by optimal parameters is improved to comparing with RTP designed by the other method.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1508-1511
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• 1997

In this paper, design parameters of Rapid Thermal Processing(RrW) to minimize the wafer tempera ture uniformity errors are proposed. 1,anip ling positions and the wafer height are important parameters for waf er temperature uniformity in R'I'P. We propose the method to seek lamp ling positions and the wafer height for optimal temperature uniformity. l'he ~~roposed method is applied to seek optimal lamp ling positions and the waf er height of 8 inch wafer. 'I'o seek the optimal lamp ling positions and the wafer height, we var\ulcorner. lamp ling 110s itions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programmi ng problem. Finally, it is shown that the wafer temperature uniformity in RI'I' designed by optimal prarneters is improved to comparing with Ii'l'P designed by the other method.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집B
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• pp.261-266
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• 2000

Temperature variation during silicon wafer baking is mainly due to natural convection caused by temperature difference between silicon wafer and upper plate. Several cases are tested and calculated numerically to improve temperature uniformity. The temperature difference and velocity magnitude in the flow cell is reduced for a small gap between the wafer and upper plate because the natural convection force is suppressed in the small space. The uniform temperature distribution can be obtained with controling the incoming flow distribution from the upper plate. An alternative method is the adiabatic wall condition on the upper plate to maintain the temperature uniformity within $0.3^{\circ}C$ on the water plate.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.93-98
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• 2008

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.63-69
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• 2012

As decreasing size of chips, the need of wafer level packaging is increased in semi-conductor and display industries. Temperature uniformity is a crucial factor in vacuum soldering process to guarantee quality of bonding between chips and wafer. In this paper, a stepwise iterative algorithm has been suggested to obtain output profile of each heat source. Since this algorithm is based on open-loop stepwise iterative experimental technique, it is easier to implement and cost effective than real time feedback controls. Along with some experiments, it was shown that the suggested algorithm can remarkably improve temperature uniformity of wafer during whole heating process compared with the ordinary manual trial-and error method.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• 한국가시화정보학회지
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• 제14권2호
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• pp.25-30
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• 2016

The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• 대한전자공학회논문지
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• 제25권6호
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• pp.647-653
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• 1988

A rapid thermal annealing system using tungsten halogen lamp has been designed and assembled. A control scheme where the temperature control is executed with calculated wafer temperature by considering the thermocouple delay rather than measured thermocouple temperature,is proposed. This control scheme gives more accurate control of the wafer temperature. In addition, the distribution of transmitted light power to the wafer in the system has been simulated, and lamp interval modification has been able to give more uniform light power distribution. Considering incident light spectrum, absorption, reflection, radiation of silicon, etc., temperature profile has been simulated. When the light power uniformity on the 3" wafer is below 1%, the temperature uniformity is about 2%.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.