• 제목/요약/키워드: Wafer Shape

검색결과 135건 처리시간 0.027초

주성분분석과 신경회로망의 융합을 통한 실리콘 웨이퍼의 마이크로 크랙 분류에 관한 연구 (A Study on Classification of Micro-Cracks in Silicon Wafer Through the Fusion of Principal Component Analysis and Neural Network)

  • 서형준;김경범
    • 한국정밀공학회지
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    • 제32권5호
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    • pp.463-470
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    • 2015
  • Solar cell is typical representative of renewable green energy. Silicon wafer contributes about 66 percent to its cost structure. In its manufacturing, micro-cracks are often occurred due to manufacturing process such as wire sawing, grinding and cleaning. Their detection and classification are important to process feedback information. In this paper, a classification method of micro-cracks is proposed, based on the fusion of principal component analysis(PCA) and neural network. The proposed method shows that it gives higher results than single application of two methods, in terms of shape and size classification of micro-cracks.

피코초 펄스 레이저를 이용한 사파이어 웨이퍼 스크라이빙에 관한 연구 (A Study on Sapphire Wafer Scribing Using Picosecond Pulse laser)

  • 문재원;김도훈
    • 한국레이저가공학회지
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    • 제8권2호
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    • pp.7-12
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    • 2005
  • The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

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직접접합 실리콘/실리콘질화막//실리콘산화막/실리콘 기판쌍의 선형가열에 의한 보이드 결함 제거 (Eliminating Voids in Direct Bonded Si/Si3N4‖SiO2/Si Wafer Pairs Using a Fast Linear Annealing)

  • 정영순;송오성;김득중;주영철
    • 한국재료학회지
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    • 제14권5호
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    • pp.315-321
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    • 2004
  • The void evolution in direct bonding process of $Si/Si_3$$N_4$$SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.

화합물 반도체 본딩용 Spin Coater Module의 동특성 평가 (Dynamic Characteristic Evaluation of Spin Coater Module for GaAs Wafer Bonding)

  • 송준엽;김옥구;강재훈
    • 한국정밀공학회지
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    • 제22권6호
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    • pp.144-151
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    • 2005
  • Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

Adhesive bonding using thick polymer film of SU-8 photoresist for wafer level package

  • Na, Kyoung-Hwan;Kim, Ill-Hwan;Lee, Eun-Sung;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • 센서학회지
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    • 제16권5호
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    • pp.325-330
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    • 2007
  • For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

공정가스와 RF 주파수에 따른 웨이퍼 표면 텍스쳐 처리 공정에서 저반사율에 관한 연구 (Study of Low Reflectance and RF Frequency by Rie Surface Texture Process in Multi Crystall Silicon Solar Cells)

  • 윤명수;현덕환;진법종;최종용;김정식;강형동;이준신;권기청
    • 한국진공학회지
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    • 제19권2호
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    • pp.114-120
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    • 2010
  • 일반적으로 결정질 실리콘 태양전지에서 표면에 텍스쳐링(texturing)하는 것은 알칼리 또는 산성 같은 화학용액을 사용하고 있다. 그러나 실리콘 부족으로 실리콘의 양의 감소로 인하여 웨이퍼 두께가 감소하고 있는 추세에 일반적으로 사용하고 있는 습식 텍스쳐링 방법에서 화학용액에 의한 많은 양의 실리콘이 소모되고 있어 웨이퍼의 파손이 심각한 문제에 직면하고 있다. 그리하여 습식 텍스쳐링 방법보다는 플라즈마로 텍스쳐링할 수 있는 건식 텍스쳐링 방법인 RIE (reactive ion etching) 기법이 대두되고 있다. 그리고 습식 텍스쳐링으로는 결정질 실리콘 태양전지의 반사율을 10% 이하로는 낮출 수가 없다. 다결정 실리콘 웨이퍼 표면에 텍스쳐링을 하기 위하여 125 mm 웨이퍼 144개를 수용할 수 있는 대규모 플라즈마 RIE 장비를 개발하였다. 반사율을 4% 이하로 낮추기 위하여 공정가스는 $Cl_2$, $SF_6$, $O_2$를 기반으로 RIE 텍스쳐링을 하였고 텍스쳐링의 모양은 공정가스, 공정시간, RF 주파수 등에 의해 조절이 가능하였다. 본 연구에서 RIE 공정을 통하여 16.1%의 변환효율을 얻었으며, RF 주파수가 텍스쳐링의 모양에 미치는 영향을 살펴보았다.

전기화학적 에칭을 이용한 텅스텐 미세 탐침 가공 (Fabrication of Tungsten Probe using Electro-Chemical Etching)

  • 인치현;김규만;주종남
    • 한국정밀공학회지
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    • 제18권2호
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    • pp.111-118
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    • 2001
  • Tungsten probe is the most important part of a probe card, which is widely used for the performance test of wafer chips. Electro chemical etching becomes an exclusive choice for mass production of the tungsten probes. In the mass production, not only the shape of the probe but also the shape distribution of machined probes is important. A new method is proposed for the mass production of the tungsten probes. Tungsten wires are separated by a distance, and dipped into electrolyte. The dipping rate is controlled to shape the probes. Several experimental tests are performed to study the machining characteristics. From the test results, machining parameters including electrical conditions and anode position showed significant influences on the shape, repeatability, precision and quality of sharp tips.

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Self-assembly of Fine Particles Applied to the Production of Antireflective Surfaces

  • Kobayashi, Hayato;Moronuki, Nobuyuki;Kaneko, Arata
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권1호
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    • pp.25-29
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    • 2008
  • We introduce a new fabrication process for antireflective structured surfaces. A 4-inch silicon wafer was dipped in a suspension of 300-nm-diameter silica particles dispersed in a toluene solution. When the wafer was drawn out of the suspension, a hexagonally packed monolayer structure of particles self-assembled on almost the complete wafer surface. Due to the simple process, this could be applied to micro- and nano-patterning. The self-assembled silica particles worked as a mask for the subsequent reactive ion etching. An array of nanometer-sized pits could be fabricated since the regions that correspond to the small gaps between particles were selectively etched off. As etching progressed, the pits became deeper and combined with neighboring pits due to side-etching to produce an array of cone-like structures. We investigated the effect of etching conditions on antireflection properties, and the optimum shape was a nano-cone with height and spacing of 500 nm and 300 nm, respectively. This nano-structured surface was prepared on a $30\;{\times}\;10-mm$ area. The reflectivity of the surface was reduced 97% for wavelengths in the range 400-700 nm.

Sensing properties of optical fiber sensor to ultrasonic guided waves

  • Zhou, Wensong;Li, Hui;Dong, Yongkang;Wang, Anbang
    • Smart Structures and Systems
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    • 제18권3호
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    • pp.471-484
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    • 2016
  • Optical fiber sensors have been proven that they have the potential to detect high-frequency ultrasonic signals, in structural health monitoring field which generally refers to acoustic emission signals from active structural damages and guided waves excited by ultrasonic actuators and propagating in waveguide. In this work, the sensing properties of optical fiber sensors based on Mach-Zehnder interferometer were investigated in the metal plate. Analytical formulas were conducted first to explore the parameters affecting its sensing performances. Due to the simple and definable frequency component, the Lamb wave excited by the piezoelectric wafer was employed to study the sensitivity of the proposed optical fiber sensors with respect to the frequency, rather than the acoustic emission signals. In the experiments, according to above investigations, spiral shape optical fiber sensors with different size were selected to increase their sensitivity. Lamb waves were excited by a circular piezoelectric wafer, while another piezoelectric wafer was used to compare their voltage responses. Furthermore, by changing the excitation frequency, the tuning frequency characteristic of the proposed optical fiber sensor was also investigated experimentally.

The Stability of Plating Solution and the Current Density Characteristics of the Sn-Ag Plating for the Wafer Bumping

  • Kim, Dong-Hyun;Lee, Seong-Jun
    • 한국표면공학회지
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    • 제50권3호
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    • pp.155-163
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    • 2017
  • In this study, the effects of the concentration of metal ions and the applied current density in the Sn-Ag plating solutions were examined in regards to the resulting composition and morphology of the solder bumps' surface. Furthermore the effect of any impurities present in the methanesulfonic acid used as a base acid in the Sn-Ag solder plating solution on the stability of plating solution as well as the characteristics of the Sn-Ag alloys films was also explored. As expected, the uniform bump was obtained by means of removing impurities in the plating solution. Consequently the resultant solder bump was obtained in an optimal current density of the range of $1A/dm^2$ to $15A/dm^2$, which has acceptable bump shape and surface roughness with 12inch wafer trial results.