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http://dx.doi.org/10.3740/MRSK.2004.14.5.315

Eliminating Voids in Direct Bonded Si/Si3N4‖SiO2/Si Wafer Pairs Using a Fast Linear Annealing  

Jung Youngsoon (서울시립대학교 신소재공학과)
Song Ohsung (서울시립대학교 신소재공학과)
Kim Dugjoong (서울시립대학교 신소재공학과)
Joo Youngcheol (순천향대학교 기계공학과)
Publication Information
Korean Journal of Materials Research / v.14, no.5, 2004 , pp. 315-321 More about this Journal
Abstract
The void evolution in direct bonding process of $Si/Si_3$$N_4$ ∥ $SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.
Keywords
SOI; direct bonding; fast linear annealing; voids; FDM;
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Times Cited By KSCI : 1  (Citation Analysis)
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