• Journal of the Korean Society for Precision Engineering
• /
• v.32 no.5
• /
• pp.463-470
• /
• 2015

Solar cell is typical representative of renewable green energy. Silicon wafer contributes about 66 percent to its cost structure. In its manufacturing, micro-cracks are often occurred due to manufacturing process such as wire sawing, grinding and cleaning. Their detection and classification are important to process feedback information. In this paper, a classification method of micro-cracks is proposed, based on the fusion of principal component analysis(PCA) and neural network. The proposed method shows that it gives higher results than single application of two methods, in terms of shape and size classification of micro-cracks.

• Laser Solutions
• /
• v.8 no.2
• /
• pp.7-12
• /
• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.315-321
• /
• 2004

The void evolution in direct bonding process of $Si/Si_3$$N_4$ ∥ $SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.6 s.171
• /
• pp.144-151
• /
• 2005

Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

• Journal of Sensor Science and Technology
• /
• v.16 no.5
• /
• pp.325-330
• /
• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.114-120
• /
• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.2
• /
• pp.111-118
• /
• 2001

Tungsten probe is the most important part of a probe card, which is widely used for the performance test of wafer chips. Electro chemical etching becomes an exclusive choice for mass production of the tungsten probes. In the mass production, not only the shape of the probe but also the shape distribution of machined probes is important. A new method is proposed for the mass production of the tungsten probes. Tungsten wires are separated by a distance, and dipped into electrolyte. The dipping rate is controlled to shape the probes. Several experimental tests are performed to study the machining characteristics. From the test results, machining parameters including electrical conditions and anode position showed significant influences on the shape, repeatability, precision and quality of sharp tips.

• International Journal of Precision Engineering and Manufacturing
• /
• v.9 no.1
• /
• pp.25-29
• /
• 2008

We introduce a new fabrication process for antireflective structured surfaces. A 4-inch silicon wafer was dipped in a suspension of 300-nm-diameter silica particles dispersed in a toluene solution. When the wafer was drawn out of the suspension, a hexagonally packed monolayer structure of particles self-assembled on almost the complete wafer surface. Due to the simple process, this could be applied to micro- and nano-patterning. The self-assembled silica particles worked as a mask for the subsequent reactive ion etching. An array of nanometer-sized pits could be fabricated since the regions that correspond to the small gaps between particles were selectively etched off. As etching progressed, the pits became deeper and combined with neighboring pits due to side-etching to produce an array of cone-like structures. We investigated the effect of etching conditions on antireflection properties, and the optimum shape was a nano-cone with height and spacing of 500 nm and 300 nm, respectively. This nano-structured surface was prepared on a $30\;{\times}\;10-mm$ area. The reflectivity of the surface was reduced 97% for wavelengths in the range 400-700 nm.

• Smart Structures and Systems
• /
• v.18 no.3
• /
• pp.471-484
• /
• 2016

Optical fiber sensors have been proven that they have the potential to detect high-frequency ultrasonic signals, in structural health monitoring field which generally refers to acoustic emission signals from active structural damages and guided waves excited by ultrasonic actuators and propagating in waveguide. In this work, the sensing properties of optical fiber sensors based on Mach-Zehnder interferometer were investigated in the metal plate. Analytical formulas were conducted first to explore the parameters affecting its sensing performances. Due to the simple and definable frequency component, the Lamb wave excited by the piezoelectric wafer was employed to study the sensitivity of the proposed optical fiber sensors with respect to the frequency, rather than the acoustic emission signals. In the experiments, according to above investigations, spiral shape optical fiber sensors with different size were selected to increase their sensitivity. Lamb waves were excited by a circular piezoelectric wafer, while another piezoelectric wafer was used to compare their voltage responses. Furthermore, by changing the excitation frequency, the tuning frequency characteristic of the proposed optical fiber sensor was also investigated experimentally.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.3
• /
• pp.155-163
• /
• 2017

In this study, the effects of the concentration of metal ions and the applied current density in the Sn-Ag plating solutions were examined in regards to the resulting composition and morphology of the solder bumps' surface. Furthermore the effect of any impurities present in the methanesulfonic acid used as a base acid in the Sn-Ag solder plating solution on the stability of plating solution as well as the characteristics of the Sn-Ag alloys films was also explored. As expected, the uniform bump was obtained by means of removing impurities in the plating solution. Consequently the resultant solder bump was obtained in an optimal current density of the range of $1A/dm^2$ to $15A/dm^2$, which has acceptable bump shape and surface roughness with 12inch wafer trial results.