• Transactions on Electrical and Electronic Materials
• /
• v.8 no.1
• /
• pp.11-14
• /
• 2007

Consumables used in Chemical Mechanical Polishing (CMP) have been played important role to improve quality and productivity. Since the properties of consumables constantly change with various reasons, such as shelf time, manufactured time, lot to lot variation from supplier and so on, CMP results are not constant during the process. Also, CMP process results are affected by multiple sources from wafer, conditioner, pad and slurry. Therefore, multiple sensing systems are required to monitor CMP process variation. In this paper, the authors focus on development of monitoring system for CMP process which consist of force, temperature and displacement sensor to measure the signal from CMP process. With monitoring systems mentioned above, complex CMP phenomena can be investigated more clearly.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.502-502
• /
• 2012

반도체 공정 중 플라즈마를 이용하는 식각 공정의 경우, 실제 식각률이나 profile의 특성은 RF Bias power에 의해 기판에 당겨지는 이온 선속에 의해 큰 영향을 받는다. 때문에 플라즈마 발생장치 내에서 기판에서의 이온에너지 분석이 중요해지고 있다. 이온에너지 분석을 위해 다양한 형태의 이온에너지 분석기가 나와있으나 기판 위에 얹혀있는 양상이었다. 이에 본 발표에서는 실제 기판 안에 이온에너지 분석기를 설치함으로써 실제 기판에서 wafer가 받는 이온들의 양상에 더 가깝게 접근했다. 이렇게 제작 된 이온에너지 분석기를 이용해 대면적 M-ICP(Magnetized-Induced Coupled Plasma)에서 아르곤 가스를 이용한 플라즈마에서 기판 이온 에너지 분포를 확인해 보았다. 압력의 변화, ICP Source power의 변화, 일정한 Source power에서 기판에 가해지는 Bias power의 변화에 대해 측정함으로써 각각의 조건 변화에 따른 이온들의 변화양상에 대한 이해를 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.546-547
• /
• 2002

Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

• The korean journal of orthodontics
• /
• v.43 no.1
• /
• pp.42-52
• /
• 2013

The aim of this paper was to propose a new method of bimaxillary orthognathic surgery planning and model surgery based on the concept of 6 degrees of freedom (DOF). A 22-year-old man with Class III malocclusion was referred to our clinic with complaints of facial deformity and chewing difficulty. To correct a prognathic mandible, facial asymmetry, flat occlusal plane angle, labioversion of the maxillary central incisors, and concavity of the facial profile, bimaxillary orthognathic surgery was planned. After preoperative orthodontic treatment, surgical planning based on the concept of 6 DOF was performed on a surgical treatment objective drawing, and a Jeon's model surgery chart (JMSC) was prepared. Model surgery was performed with Jeon's orthognathic surgery simulator (JOSS) using the JMSC, and an interim wafer was fabricated. Le Fort I osteotomy, bilateral sagittal split ramus osteotomy, and malar augmentation were performed. The patient received lateral cephalometric and posteroanterior cephalometric analysis in postretention for 1 year. The follow-up results were determined to be satisfactory, and skeletal relapse did not occur after 1.5 years of surgery. When maxillary and mandibular models are considered as rigid bodies, and their state of motion is described in a quantitative manner based on 6 DOF, sharing of exact information on locational movement in 3-dimensional space is possible. The use of JMSC and JOSS will actualize accurate communication and performance of model surgery among clinicians based on objective measurements.

• Polymer(Korea)
• /
• v.31 no.5
• /
• pp.447-453
• /
• 2007

In this study, we fabricated recrystallized PLGA (rPLGA) particles using the vacuum drying method. In order to investigate an applicability of the rPLGA particles for controlled release system of 5-fluorouracil (5-FU) loaded PLGA wafer, we prepared three different wafers using; 1) untreated PLGA (uPLGA), 2) rPLGA, and 3) uPLGA and rPLGA (4 : 1, 1 : 1 or 1 : 4). The rPLGA particles were characterized using NMR, IR and GPC to compare with uPLGA particles. The surface and cross section morphology of the prepared wafers were observed by the scanning electron microscope. The release profile of the 5-FU loaded wafer was measured by HPLC. The 5-FU/rPLGA wafer released the incorporated 5-FU in a sustained manner with low initial burst compared to 5-FU/uPLGA. These results showed that the ratio of pure PLGA/recrystallized PLGA can affect the release behaviors.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.5
• /
• pp.179-184
• /
• 2018

To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski silicon-crystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.

• Journal of Korean Ophthalmic Optics Society
• /
• v.14 no.1
• /
• pp.63-68
• /
• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The effect of oxygen incorporation in the fabrication of deposited films was investigated. Methods: The cross sections of deposited films on Silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS survey spectra, the compositional depth-profile of deposited films was examined by an XPS apparatus. Results: From the data of XPS depth profile of films, it could be seen that the element O as well as the elements Ti and N present in the surface of the film and the relative percentage of the element O was constant at 65 at.% with respect to the depth of film. Conclusions: The color change with thickness of the films had something to do with the change of Ti $ 2p_{3/2}$ peak intensity and shape mixed of $ TiO_2$, TiN, $ TiO_{x}N_{y}$ compound.

• Journal of the Korean institute of surface engineering
• /
• v.34 no.5
• /
• pp.516-521
• /
• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.5
• /
• pp.179-183
• /
• 2008

Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell, Heat treatment at $850^{\circ}C$ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than $850^{\circ}C$ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1495_1496
• /
• 2009

A cylindrical post dipping (CPD) method to fabricate the PDMS microlens arrays is presented in this paper. The proposed CPD method is based on the surface tension effect. 2 mm gap and gapless lenses with 2 mm diameter are fabricated and characterized geometically. Both profiles of the fabricated microlens are well-fitted with ideal lens profile. The surface roughness average of the fabricated lens is measured to be 1.953 nm. The focal length of 2mm gap lenses and the gapless lenses is calculated to be 17.00 mm with 0.65 mm standard deviation and 29.88 mm with 2.58 mm standard deviation, respectively. The proposed CPD method can be applied to wafer level lens fabrication due to its simplicity and versatility.