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http://dx.doi.org/10.6111/JKCGCT.2018.28.5.179

Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth  

Kim, Kwanghun (R&D Center, WoongjinEnergy)
Kwon, Sejin (R&D Center, WoongjinEnergy)
Kim, Ilhwan (Department of Electronic and Computer Engineering, Hanyang University)
Park, Junseong (Department of Electronic and Computer Engineering, Hanyang University)
Shim, Taehun (Department of Electronic and Computer Engineering, Hanyang University)
Park, Jeagun (Department of Electronic and Computer Engineering, Hanyang University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.5, 2018 , pp. 179-184 More about this Journal
Abstract
To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski silicon-crystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.
Keywords
Czochralski method; Temperature profile; Silicon single crystal ingot; Charge size; Solar industry;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 S.S. Baik, S.J. Kwon and K.H. Kim, "Understanding of the effect of charge size to temperature profile in the Czochralski method", J. Korean Cryt. Growth Cryst. Technol. 28 (2018) 141.
2 S. Bhavsar, M. Najera, R. Solunke and G. Veser, "Chemical looping: To combustion and beyond", Catal. Today 228 (2014) 96.   DOI
3 A. Zyadin, A. Puhakka, P. Ahponen and P. Pelkonen, "Secondary school teachers' knowledge, perceptions, and attitudes toward renewable energy in Jordan", Renew. Energy 62 (2014) 341.   DOI
4 S.R. Gislason and E.H. Oelkers, "Carbon Storage in Basalt", Science 344 (2014) 373.   DOI
5 E.W. Mcfarland, "Solar energy: setting the economic bar from the top-down", Energy Environ. Sci. 8 (2014) 846.
6 Y. Horiuchi, T. Toyao, M. Takeuchi, M. Matsuoka and M. Anpo, "Recent advances in visible-light-responsive photocatalysts for hydrogen production and solar energy conversion-from semiconduction $TiO_2$ to MOF/PCP photocatalysts", Phy. Chem. Chem. Phy. 32 (2013) 13243.
7 C.F. Guo, T. Sun, F. Cao, Q. Liu and Z. Ren, "Metallic nanostructures for light trapping in energy-harvesting devices", Light-Sci. Appl. 3 (2014) e161.   DOI
8 S.S. Baik, I.S. Pang, J.M. Kim and K.H. Kim, "Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method", Electron. Mater. Lett. 12 (2016) 426.   DOI
9 B. Sopori, P. Basnyat, S. Devayajanam, T. Tan, A. Upadhyaya, K. Tate, A. Rohatgi and H. Xu, "Dissolution of oxygen precipitate nuclei in n-type CZ-Si Wafers to improve their material quality: experimental results", IEEE J. Photovolt. 7 (2017) 97.   DOI
10 J. Haunschild, I.E. Reis, J. Geilker and S. Rein, "Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging", Phys. Status Solidi RRL 5 (2011) 199.   DOI
11 C.L. Zhou, W.J. Wang, H.L. Li, L. Zhao, H.W. Diao and X.D. Li, "Influence of ring oxidation-induced stack faults on efficiency in silicon solar", Chin. Phys. Lett. 25 (2008) 3005.   DOI
12 J. Schmidt, "Light-induced degradation in Crystalline silicon solar cells", Solid State Phenom. 95-96 (2004) 187.
13 T. Luka, C. Hagendorf and M. Turek, "Multicrystalline PERC solar cells: Is light-induced degradation challenging the efficiency gain of rear passivation?", PV International 32 (2016) 37.
14 J. Lindroos, Y. Boulfrad, M. Yli-Koski and H. Savin, "Preventing light-induced degradation in multicrystalline silicon", J. Appl. Phys. 115 (2014) 154902.   DOI
15 S. Togawa, Y. shiraishi, K. Terashima and S. Kimura, "Oxygen transport mechanism in Czochralski silicon melt", J. Electrochem. Soc. 142 (1995) 2844.   DOI
16 T.C. Chen, H.C. Wu and C.I. Wang, "The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth", J. Cryst. Growth 173 (1997) 367.   DOI
17 N. Machida, K. Hoshikawa and Y. Shimizu, "The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon crystals grown in a transverse magnetic field", J. Cryst. Growth 210 (2000) 532.   DOI
18 M. Watanabe, W. Wang, M. Eguchi and T. Hibiya, "Control of oxygen-atom transport in silicon melt during crystal growth by electromagnetic force", Mater. T. JIM 41 (2000) 1013.   DOI
19 K.H. Kim, B.C. Sim, I.S. Choi and H.W. Lee, "Point defect behavior in Si crystal grown by electromagnetic Czochralski (EMCZ) method", J. Cryst. Growth 299 (2007) 206.   DOI
20 J. Friedrich, L. Stockmeier and G. Muller, "Constitutional supercooling in Czochralski growth of heavily doped silicon crystals", Acta Phys. Pol. A 124 (2013) 219.   DOI
21 K.H. Kim and S.S. Baik, "Optimization of pulling speed for decreasing thermal stress in different quartz crucible size with Czochralski method", Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd. IEEE, 2015.
22 V.V. Kalaev, "Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth", J. Cryst. Growth 303 (2007) 203.   DOI
23 V.V. Kalaev, A. Sattler and L. Kandinski, "Crystal twisting in Cz Si growth", J. Cryst. Growth 413 (2015) 12.   DOI
24 B. Zhou, W. Chen, Z. Li, R. Yue, G. Liu and X. Huang, "Reduction of oxygen concentration by heater design during Czochralski Si growth", J. Cryst. Growth 483 (2018) 164.   DOI