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The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell  

Shim, Ji-Myung (Department of Materials Science and Engineering, University of Incheon)
Kim, Young-Kwan (Department of Materials Science and Engineering, University of Incheon)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.18, no.5, 2008 , pp. 179-183 More about this Journal
Abstract
Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell, Heat treatment at $850^{\circ}C$ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than $850^{\circ}C$ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.
Keywords
n- Type silicon solar cell; Al-emitter; Heat treatment; Screen printing;
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1 R. Kopecek, T. Buck, J. Libal, I. Rover, K. Wambach, L. J. Geerlings, P. Sanchez-Friera, J. Alonso, E. Wefringhaus and P. Fath, "Large area screen printed N-type silicon solar cells with rear Aluminium emitter: Efficiencies exceeding 16%", IEEE 4th WCPEC (2006)
2 J.E. Cotter et al., 15th Workshop on Crystalline Silicon solar cells & Modules: Materials and Processes (2005)
3 C. Schmiga, A. Froitzheim, M. Ghosh, A. Merz, J. Schmidt and R. Brendel, "Solar cells on n-type silicon materials with screen printed rear aluminium-$p^+$emitter", 20th PVSEC (2005)
4 C. Schmiga, A. Froitzheim, M. Ghosh, A. Merz, J. Schmidt and R. Brendel, "Advances in the manufacturing of n-type silicon solar cells with screen printed aluminium alloyed rear emitter", 21th PVSEC (2006)
5 D. MacDonald and L.J. Geerligs, Applied Physics Letter 85 (2004)   DOI   ScienceOn
6 J.W. Mayer and S.S Lau, "Electronic Materials Science : For Integrated Circuits in Si and GaAs", (1988) 283