• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.200-204
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• 2011

In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

• Kyungpook Mathematical Journal
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• v.63 no.1
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• pp.123-129
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• 2023

For an ordered set W = {w₁, w₂, . . . , w_k} of vertices and a vertex v in a connected graph G, the k-vector r(v|W) = (d(v, w₁), d(v, w₂), . . . , d(v, w_k)) is called the metric representation of v with respect to W, where d(x, y) is the distance between the vertices x and y. A set W is called a resolving set for G if distinct vertices of G have distinct metric representations with respect to W. The minimum cardinality of a resolving set for G is its metric dimension dim(G), and a resolving set of minimum cardinality is a basis of G. The corona product, G ⊙ H of graphs G and H is obtained by taking one copy of G and n(G) copies of H, and by joining each vertex of the ith copy of H to the ith vertex of G. In this paper, we obtain bounds for dim(G ⊙ K₁), characterize all graphs G with dim(G ⊙ K₁) = dim(G), and prove that dim(G ⊙ K₁) = n - 1 if and only if G is the complete graph K_n or the star graph K_1,n-1.

• The Transactions of the Korea Information Processing Society
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• v.5 no.11
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• pp.2845-2854
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• 1998

Median filter can be implemented in the binary domain based on threshold decomposition, stacking property, and linear separability. In this paper, we develop one-dimensional and two-dimensional parallel algorithms for the median filter on a reconfigurable mesh with buses(RMESH) which is suitable for VLSI implementation. And we evaluate their performance by comparing the time complexities of RMESH algorithms with those of algorithms on mesh-connected computer. When the length of M-valued 1-D signal is N and w is the window width, the RMESH algorithm is done in O(Mw) time and mesh algorithm is done in $O(Mw^2)$ time. Beside, when the size of M-valued 2-D image is $N{\times}N$ and the window size is $w{\times}w$, our algorithm on $N{\times}N$ RMESH can be computed in O(Mw) time which is a significant improvement over the $O(Mw^2)$ complexity on $N{\times}N$ mesh.

• Advances in Traditional Medicine
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• v.4 no.1
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• pp.53-59
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• 2004

The effect of aqueous and alcoholic extract of the leaves of Ocimum. sanctum was studied on the spontaneous movements of the whole worm (w.w) preparation and nerve muscle (n.m.) complex of Setaria cervi (S. cervi) and on the survival of microfilariae (m.f.) in vitro. Both the extracts caused inhibition of the spontaneous motility of the w.w. and n.m. complex of S. cervi characterized by initial stimulation followed by reversible paralysis, aqueous extract at a higher concentration showed immediate effect and irreversible paralysis. The concentration required to inhibit the movements of n.m. complex was $1/4^{th}$ for aqueous and $1/3^{rd}$ for alcoholic extract compared to that for the w.w., suggesting a cuticular permeability barrier. On the m.f. the lethal concentration (LC 50 and LC 90) were 35 and 50 ng/ml for aqueous whereas, 60 and 85 ng/ml for alcoholic extracts respectively.

• Bulletin of the Korean Mathematical Society
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• v.50 no.4
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• pp.1193-1200
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• 2013

The center of the Lie group $SU(n)$ is isomorphic to $\mathbb{Z}_n$. If $d$ divides $n$, the quotient $SU(n)/\mathbb{Z}_d$ is also a Lie group. Such groups are locally isomorphic, and their Weyl groups $W(SU(n)/\mathbb{Z}_d)$ are the symmetric group ${\sum}_n$. However, the integral representations of the Weyl groups are not equivalent. Under the mod $p$ reductions, we consider the structure of invariant rings $H^*(BT^{n-1};\mathbb{F}_p)^W$ for $W=W(SU(n)/\mathbb{Z}_d)$. Particularly, we ask if each of them is a polynomial ring. Our results show some polynomial and non-polynomial cases.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• Bulletin of the Korean Mathematical Society
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• v.44 no.1
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• pp.131-150
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• 2007

In this paper, we will define direct producted $W^*-porobability$ spaces over their diagonal subalgebras and observe the amalgamated free-ness on them. Also, we will consider the amalgamated free stochastic calculus on such free probabilistic structure. Let ($A_{j},\;{\varphi}_{j}$) be a tracial $W^*-porobability$ spaces, for j = 1,..., N. Then we can define the corresponding direct producted $W^*-porobability$ space (A, E) over its N-th diagonal subalgebra $D_{N}\;{\equiv}\;\mathbb{C}^{{\bigoplus}N}$, where $A={\bigoplus}^{N}_{j=1}\;A_{j}\;and\;E={\bigoplus}^{N}_{j=1}\;{\varphi}_{j}$. In Chapter 1, we show that $D_{N}-valued$ cumulants are direct sum of scalar-valued cumulants. This says that, roughly speaking, the $D_{N}-freeness$ is characterized by the direct sum of scalar-valued freeness. As application, the $D_{N}-semicircularityrity$ and the $D_{N}-valued$ infinitely divisibility are characterized by the direct sum of semicircularity and the direct sum of infinitely divisibility, respectively. In Chapter 2, we will define the $D_{N}-valued$ stochastic integral of $D_{N}-valued$ simple adapted biprocesses with respect to a fixed $D_{N}-valued$ infinitely divisible element which is a $D_{N}-free$ stochastic process. We can see that the free stochastic Ito's formula is naturally extended to the $D_{N}-valued$ case.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.