• 센서학회지
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• 제9권2호
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• pp.90-95
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• 2000

$Si_3N_4/SiO_2/Si_3N_4$/Si 판위에 MgO 박막을 성장하여 MgO 단결정과 결정배향성이 유사한 초전형 적외선 센서용 기판을 제작하였다. RF 마그네트론 스퍼터링법으로 MgO 박막을 성장하였고, 그 위에 Pt 하부전극과 PLT 박막을 성장시킨 후 c축 배향성을 조사하였다. $500^{\circ}C$의 기판온도와 30 mTorr의 분위기 압력 및 160 W의 RF power에서 성장된 MgO 박막이 단결정 MgO가 가지는 배향성 정도의 우수한 a축 배향성을 보였고, 그 위에 성장된 PLT 박막은 MgO 단결정 기판위에 성장된 것과 거의 회절강도 변화가 유사한 c축 배향성을 보였다.

• Progress in Superconductivity
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• 제6권2호
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• pp.118-123
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• 2005

A low cost YBCO oxide powder was employed as a starting precursor for MOD process. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process because that YBCO oxide precursor is cheap and easy to control molar ratio. YBCO thin films were prepared by this oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at below $780^{\circ}C$ shows no transport $I_c$ and poor microstructure. Raman spectroscopic study of YBCO thin film indicates that YBCO thin film prepared at below $780^{\circ}C$ contains a number of imperfections such as non-superconducting $BaCuO_2$ phase, cation disorder, etc. However, the YBCO thin film treated at above $800^{\circ}C$ shows improvement in microstructure and current transport properties. This research was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.160-161
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• 전기의세계
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• 제29권2호
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.505-509
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• 2004

The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• 전자공학회논문지A
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• 제31A권9호
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.

• 한국정보전자통신기술학회논문지
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• 제11권6호
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• pp.772-777
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• 2018

본 논문은 RF 마크네트론 스퍼터링 장비를 이용하여 ITO 유리에 N-type 및 P-type을 증착하였다. N-Type의 오믹접촉은 모든 조건에서 잘 되었다. 면저항은 RF Power가 증가할수록 면 저항이 증가되는 현상을 나타내었다. 증착한 박막의 표면을 분석해 본 결과, RF Power가 250W이고, 기판온도가 $250^{\circ}C$의 조건에서 입자가 균일하고 크기가 일정한 박막이 증착 된 것으로 측정되었다. P-Type은 모든 조건에서 오믹접촉이 잘 이루어졌으며 면저항은 RF Power가 증가할수록 증가되는 것으로 나타내었다. RF Power가 증가할수록 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막과 NP junction 박막은 스퍼터링 시간이 증가할수록 박막의 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막을 제작한 결과, 변환효율은 스퍼터링 시간이 10분일 때 0.2로 가장 우수하였다.

• 한국결정성장학회지
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• 제17권2호
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• pp.47-51
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• 2007

저굴절 재료인 F-doped SiOC : H 박막을 Si 웨이퍼와 유리기판위에 rf power, 기판온도, 그리고 가스유량($SiH_4,\;CF_4$ and $N_2O$)을 변수로 하여 PECVD법으로 증착하였다. 기판 온도와 rf power증가에 따라 F-doped SiOC : H 박막의 굴절률은 감소하는 경향을 보였다. $N_2O$ 가스 유량이 감소함에 따라 증착된 박막의 굴절률은 감소하였으며, rf power가 180W 기판온도 $100^{\circ}C$, 그리고 $N_2O$ 가스를 첨가하지 않은 조건에서 증착한 박막은 최소 굴절률인 1.3778을 갖는 것을 알 수 있었다. Rf power 60W에서 180W로 증가시킴에 따라 증착된 박막의 불소 함량은 1.9at%에서 2.4at%로 증가하였으며 이러한 이유로 박막의 굴절률은 감소하는 경향을 나타냈다.