• Publications of The Korean Astronomical Society
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• v.22 no.4
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• pp.169-175
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• 2007

The international cooperation project CIBER (Cosmic Infrared Background ExpeRiment) is a rocket-borne instrument, of which the scientific goal is to measure the cosmic near-infrared extra-galactic background to search for signatures of primordial galaxy formation. CIBER consists of a wide-field two-color camera, a low-resolution absolute spectrometer, and a high-resolution narrow-band imaging spectrometer. Currently, all the subsystems have been built, and the integration, testing, and calibration of the CIBER system are on process for the scheduled launch in June 2008.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1071-1079
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• 2010

This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{\mu}s$. In the experimental results, the output power, gain, and drain efficiency(${\eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.1
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• pp.77-84
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• 2012

This paper describes the process of optimal resonant frequency design with full-bridge series-loaded resonant dc-dc converter in a high efficiency 3.3 kW on-board battery charger application for Electric Vehicles and Plug-in Hybrid Electric Vehicles. The optimal range of resonant frequency and switching frequency used for ZVS are determined by considering trade-off between loss of switching devices and resonant network with size of passive/magnetic devices. In addition, it is defined charging region of battery, the load of on-board charger, as the area of load by deliberating the characteristic of resonant. It is verified the designed frequency band by reflecting the defined area on resonant frequency.

• Journal of Ship and Ocean Technology
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• v.12 no.1
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• pp.1-15
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• 2008

An edgetone is the discrete tone or narrow-band sound produced by an oscillating free shear layer, impinging on a rigid surface. In this paper, 2-dimensional edgetone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle is presented using lattice Boltmznan model with 21 bits, which is introduced a flexible specific heat ratio y to simulate diatomic gases like air. The blown jet is given a parabolic inflow profile for the velocity, and the edges consist of wedges with angle 20 degree (for symmetric wedge) and 23 degree (for inclined wedge), respectively. At a stand-off distance w, the edge is inserted along the centerline of the jet, and a sinuous instability wave with real frequency is assumed to be created in the vicinity of the nozzle exit and to propagate towards the downward. Present results presented have shown in capturing small pressure fluctuating resulting from periodic oscillation of the jet around the edge. The pressure fluctuations propagate with the speed of sound. Their interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips. It is found that, as the numerical example, satisfactory simulation results on the edgetone can be obtained for the complex flow-edge interaction mechanism, demonstrating the capability of the lattice Boltzmann model with flexible specific heat ratio to predict flow-induced noises in the ventilating systems of ship.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1397-1400
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• 2013

The influence of electron beam irradiation on photocatalytic activity of $TiO_2$ thin films was investigated. $TiO_2$ thin films were prepared by anodization of Ti foil, and they were then subjected to an 1 MeV electron beam. Changes in physical properties and photocatalytic activity of $TiO_2$ before and after e-beam irradiation were investigated. The crystallinity of the synthesized materials was investigated by X-ray diffraction, and the oxidation states of both titanium and oxygen were determined by X-ray photoelectron spectroscopy (XPS). The density of donor ($N_d$) and flat band potential ($E_{fb}$) were investigated by Mott-Schottky analysis, and photocurrent was measured under a 1kW Xenon lamp illumination. After e-beam irradiation, significant change of Ti oxidation state was observed. $Ti^{3+}/Ti^{4+}$ ratio increased mainly due to the surface reduction by electron, and photocurrent was observed to increase with e-beam irradiation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.34.2-34.2
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• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.27-36
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• 2001

In this paper, micromachined millimeter-wave cavity resonators ar presented. One-port and two-port cavity resonators at Ka-band are designed using 3D design software, HP $HFSS^{TM}$ ver. 5.5 Cavity resonators are fabricated on Si substrate, which is etched down for the cavity, bonded with a Quartz wafer in which metal patterns for the feeding line coupling slot are formed. One-port resonator shows the resonant frequency of 39.34 GHz, the return loss of 14.5 dB, and the loaded $Q(Q_{L})$ of 150. Two-port cavity resonator shows the resonant frequency of 39 GHz, the insertion and return losses of 4.6dB and 19,9dB, the loaded($Q_{L}$) and unloaded $Q(Q_{U})$) of 44.3 and 107, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.451-454
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• 2011

In this paper, a wideband clock generator using novel Automatic frequency calibration(AFC) scheme is proposed. Wideband clock generator using AFC has the advantage of small VCO gain and wide frequency band. The conventional AFC compares whether the feedback frequency is faster or slower then the reference frequency. However, the proposed AFC can detect frequency difference between reference frequency with feedback frequency. So it can be reduced an operation time than conventional methods AFC. Conventional AFC goes to the initial code if the frequency step changed. This AFC, on the other hand, can a prior state code so it can approach a fast operation. In simulation results, the proposed clock generator is designed for DisplayPort using the CMOS ring-VCO. The VCO tuning range is 350MHz, and a VCO frequency is 270MHz. The lock time of clock generator is less then 3us at input reference frequency, 67.5MHz. The phase noise is -109dBC/Hz at 1MHz offset from the center frequency. and power consumption is 10.1mW at 1.8V supply and layout area is $0.384mm^2$.

• Journal of Power Electronics
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• v.16 no.1
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• pp.84-92
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• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.