• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.9A
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• pp.2153-2164
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• 1998

This paper has presented the parameters for the coexistence between two systems in macro/microcell ovelaid W-CDMA WLL (wideband CDMA wireless local loop) and has calculated the capacity of forward/reverse link in microcell. To produce the capacity for analyzing system interference effects, we have shown tables and graphs with the parameters sucyh as RF channel bandwidth of WLL(W), the transmission rate of service message(R), the required signal power to noise power ratio( $E_{b/}$ $N_{0}$) for achieving accepatable error rate, te user number ( $N_{W1}$, $N_{W2}$) of the neighboring system, the signal power to interference power ratio(.GAMMA.$_{C1B}$, .GAMMA.$_{C2B}$) of the neighboring system, the normalized distance(d) between microcell and macrocell base-station, and microcell to macrocell radius ratio ( $R_{d}$). From the results, we have convinced that the capacity of microcell diminishes as increasing the user number ( $N_{W2}$) in macrocell, increasing the microcell radius, and decreasing the normalized distance(d) between microcell and macrocell base-station. Especially, we have known that when $R_{d}$=0.1, $N_{W2}$ must be below 24 at .GAMMA.$_{C2B}$ = 0 dB and below 8 at .GAMMA.$_{C2B}$ = 4 dB for the acceptable capacity raito to be over 80%. Therfore, this paper is usefult to design microcell W-CDMA WLL for accommodating more user number under the interference effects of macrocell W-CDMA WLL and is expected to be reference in power control if base-station.ation.ion.ation.ation.

• Journal of applied mathematics & informatics
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• v.28 no.1_2
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• pp.13-30
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• 2010

Let C be a nonempty closed convex subset of a real Hilbert space H. Consider the following iterative algorithm given by $x_0\;{\in}\;C$ arbitrarily chosen, $x_{n+1}\;=\;{\alpha}_n{\gamma}f(W_nx_n)+{\beta}_nx_n+((1-{\beta}_n)I-{\alpha}_nA)W_nP_C(I-s_nB)x_n$, ${\forall}_n\;{\geq}\;0$, where $\gamma$ > 0, B : C $\rightarrow$ H is a $\beta$-inverse-strongly monotone mapping, f is a contraction of H into itself with a coefficient $\alpha$ (0 < $\alpha$ < 1), $P_C$ is a projection of H onto C, A is a strongly positive linear bounded operator on H and $W_n$ is the W-mapping generated by a finite family of nonexpansive mappings $T_1$, $T_2$, ${\ldots}$, $T_N$ and {$\lambda_{n,1}$}, {$\lambda_{n,2}$}, ${\ldots}$, {$\lambda_{n,N}$}. Nonexpansivity of each $T_i$ ensures the nonexpansivity of $W_n$. We prove that the sequence {$x_n$} generated by the above iterative algorithm converges strongly to a common fixed point $q\;{\in}\;F$ := $\bigcap^N_{i=1}F(T_i)\;\bigcap\;VI(C,\;B)$ which solves the variational inequality $\langle({\gamma}f\;-\;A)q,\;p\;-\;q{\rangle}\;{\leq}\;0$ for all $p\;{\in}\;F$. Using this result, we consider the problem of finding a common fixed point of a finite family of nonexpansive mappings and a strictly pseudocontractive mapping and the problem of finding a common element of the set of common fixed points of a finite family of nonexpansive mappings and the set of zeros of an inverse-strongly monotone mapping. The results obtained in this paper extend and improve the several recent results in this area.

• Communications of the Korean Mathematical Society
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• v.34 no.1
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• pp.1-16
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• 2019

Let a, b, P, and Q be real numbers with $PQ{\neq}0$ and $(a,b){\neq}(0,0)$. The Horadam sequence $\{W_n\}$ is defined by $W_0=a$, $W_1=b$ and $W_n=PW_{n-1}+QW_{n-2}$ for $n{\geq}2$. Let the sequence $\{X_n\}$ be defined by $X_n=W_{n+1}+QW_{n-1}$. In this study, we obtain some new identities between the Horadam sequence $\{W_n\}$ and the sequence $\{X_n\}$. By the help of these identities, we show that Diophantine equations such as $$x^2-Pxy-y^2={\pm}(b^2-Pab-a^2)(P^2+4),\\x^2-Pxy+y^2=-(b^2-Pab+a^2)(P^2-4),\\x^2-(P^2+4)y^2={\pm}4(b^2-Pab-a^2),$$ and $$x^2-(P^2-4)y^2=4(b^2-Pab+a^2)$$ have infinitely many integer solutions x and y, where a, b, and P are integers. Lastly, we make an application of the sequences $\{W_n\}$ and $\{X_n\}$ to trigonometric functions and get some new angle addition formulas such as $${\sin}\;r{\theta}\;{\sin}(m+n+r){\theta}={\sin}(m+r){\theta}\;{\sin}(n+r){\theta}-{\sin}\;m{\theta}\;{\sin}\;n{\theta},\\{\cos}\;r{\theta}\;{\cos}(m+n+r){\theta}={\cos}(m+r){\theta}\;{\cos}(n+r){\theta}-{\sin}\;m{\theta}\;{\sin}\;n{\theta},$$ and $${\cos}\;r{\theta}\;{\sin}(m+n){\theta}={\cos}(n+r){\theta}\;{\sin}\;m{\theta}+{\cos}(m-r){\theta}\;{\sin}\;n{\theta}$$.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.213-217
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• 1997

Magnesium reduction of Mo(N-C6H3-2,6-i-Pr2)2Cl2(DME) in the presence of trimethylphosphine led to a mixture of Mo(N-C6H3-2,6-i-Pr2)(PMe3)2Cl3, 1, and Mo2(PMe3)4Cl4, 2. In solution 1 is slowly air-oxidized to Mo(N-2,6-i-Pr2-C6H3)(OPMe3)(PMe3)Cl3, 3. 1 is chemically inert to carbon nucleophiles (ZnMe2, ZnEt2, AlMe3, AlEt3, LiCp, NaCp, TlCp, NaCp*, MeMgBr, EtMgBr), oxygen nucleophiles (LiOEt, LiO-i-Pr, LiOPh, LiOSPh), and hydrides (LiBEt3H, LiBEt3D). Crystal data for 1: orthorhombic space group P212121, a=11.312(3) Å, b=11.908(3) Å, c=19.381(6) Å, Z=4, R(wR2)=0.0463 (0.1067). Crystal data for 2: monoclinic space group Cc, a=18.384(3) Å, b=9.181(2) Å, c=19.118(3) Å, b=124.98(1)°, Z=4, R(wR2)=0.0228 (0.0568). Crystal data for 3: orthorhombic space group P212121, a=11.464(1) Å, b=14.081(2) Å, c=16.614(3) Å, Z=4, R(wR2)=0.0394 (0.0923).