• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.5
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• pp.220-226
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• 2016

The mechanical properties of Ti-6Al-4V can be improved by microstructural control through the heat treatment in ${\alpha}+{\beta}$ region. The heat treatment was carried out with a variety of heat treatment temperatures and holding times to find the optimized heat treatment conditions and it was analyzed by linking the microstructural characteristics and mechanical properties. The part of ${\beta}$ phase with $10{\pm}2wt%$ vanadium was transformed into ${\alpha}^{{\prime}{\prime}}$ martensite phase after quenched, so the hardness and tensile properties were decreased below $900^{\circ}C$. The higher the heat treatment temperature is, the smaller is the vanadium-rich region, which leads to transformation into hcp ${\alpha}^{\prime}$ martensite above $900^{\circ}C$. The hardness and tensile properties were improved due to the hard ${\alpha}^{\prime}$ martensite. As the holding times were longer, the hardness and tensile properties decreased below $900^{\circ}C$ because of the softening effect by the grain growth. When varying the holding times above $900^{\circ}C$, the change of mechanical properties was slight because the softening effect of grain growth and the strengthening effect of ${\alpha}^{\prime}$ phase were counteractive. Therefore, the best conditions of heat treatment, which is in the range of $920{\sim}960^{\circ}C$, 40 min, WQ, can effectively improve the mechanical properties of Ti-6Al-4V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.197-197
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• 2016

Commercially pure titanium (CP Ti) and Ti-6Al-4V alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Manganese(Mn) plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Radio frequency(RF) magnetron sputtering in the various PVD methods has high deposition rates, high-purity films, extremely high adhesion of films, and excellent uniform layers for depositing a wide range of materials, including metals, alloys and ceramics like a hydroxyapatite. The aim of this study is to research the Mn coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. Mn coatings was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Mn coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.130.2-130.2
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• 2010

한전 전력연구원에서는 2009년 12월부터 125 kW급 용융탄산염 연료전지 발전시스템의 성능평가를 위한 운전이 진행되고 있다. 현재 진행 중인 "250 kW급 열병합 용융탄산염 연료전지 Proto Type개발" 과제의 최종시작품인 250 kW급 발전시스템은 125 kW급 MCFC 스택 2기로 설계되어, 125 kW급 시스템의 시험운전은 매우 중요한 기술적 성과가 될 것이다. 현재 125 kW급 MCFC 스택은 10,000 $cm^2$의 유효전극면적을 갖는 단위전지들로 구성되었으며, 적층 스택의 온도 및 농도분포의 최적화를 위해 내부 매니폴드 및 Co-flow Type 열교환기 기반의 분리판을 개발 적용하였다. 연료극의 전극 구성은 Ni-Al alloy로, 공기극의 전극 구성은 Lithiated-NiO로 이루어졌다. 그리고 매트릭스는 ${\alpha}-LiAlO_2$로 제작되었고, 전해질은 Li과 K Carbonate가 68 : 32 비율로 섞인 용융염을 사용하였다. 본 125 kW급 용융탄산염 연료전지 시스템의 운전평가는 고적층 스택의 온도 및 농도 분포를 확인하고, 최적화된 스택 운전 조건을 도출하는 것을 그 목적으로 하고 있다. 125kW급 스택 1기의 규모의 주변기기 시스템은 외부개질기, 촉매연소기, 이젝터, 고온순환 블로어 및 공기블로어 등으로 이루어져 있다. 고온형 연료전지 시스템에서 연료극과 공기극의 균일한 온도 및 압력 확보는 매우 중요하며, 이를 위하여 외부개질기 및 촉매연소기 연동을 통한 온도편차를 최소화하고, 기존 고온용 순환 블로어 대신 이젝터를 개발 도입하여 압력균형을 조절하였다. 125kW급 MCFC 시스템은 2009년 12월부터 전처리 운전을 시작하여 2010년 1월 말부터 PCS로 전기를 생산하고 있다. 평균전압 0.83V에서 100kW의 출력을 기록하였으며, 피크부하 120 kW, 누적출력량 30 MWh를 초과달성하였다.

• New & Renewable Energy
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• v.18 no.2
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• pp.73-81
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• 2022

This study was aimed at designing a condenser, as a component of the organic Rankine cycle system for ships. The condenser was manufactured through press molding to achieve a bent shape to enhance the heat transfer performance, considering the shape of the heat transfer plate used in a brazing plate heat exchanger. The heat transfer plate was made of copper-nickel alloy. The required heat transfer rate for the condenser was 110 kW, and the maximum number of layers was set as 25, considering the characteristics of high-temperature brazing. Computational fluid dynamics techniques were used to perform the thermal fluid analysis, based on the ANSYS CFX (v.18.1) commercial program. The heat transfer rate of the condenser was 4.96 kW for one layer (width and length of 0.224 and 0.7 m, respectively) of the heat transfer exchanger. The fin efficiency pertaining to the heat transfer plate was approximately 20%. The heat flow analysis for one layer of the heat exchanger plate indicated that the condenser with 25 layers of heat transfer plates could achieve a heat transfer rate of 110 kW.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.226-231
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• 2008

Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.129-136
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• 2006

In order to get basic information on the reference electrode material for the long life Al concentration sensor in zinc galvanizing melt, the workability and stability of fluorine potential cell with $CaF_2$ single crystal electrolyte were examined carefully at constant temperature for six kinds of reference materials (Zn, Sn, Cd, Bi, Pb, Al-Sn alloy + fluorides). Good workability and stability of the sensor were found in sensor with $Bi+BiF_3$ reference electrode. The Al sensor with $Bi+BiF_3$ reference electrode was assembled and was tested in Zn-Al melt with different Al concentration. The EMF was changed rapidly with the change of Al concentration and was stabilized in a short time. Thus the response of EMF was satisfactory for $CaF_2$ sensor. The correlationship between EMF from the sensor and logarithm of Al concentration has been derived from the least square regression method. E/mV=57.515log[wt% Al]+1883.3 R=0.9717 ($0.013{\leq}[wt% Al]{\leq}0.984$) The EMF from Al sensor was increased linearly against logarithm of [wt% Al]. The fluorine potential of Zn-Al melt was also calculated to be in the range of $10^{-60}{\sim}10^{-61}$ Pa for the present experiemental condition.